PNP3638A MICRO-ELECTRONICS | Alldatasheet

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Technical content

S$ PN3638,A = |

5 PNP ,

~ a SILICON | TRANSISTORS | PN3638, PN3638A are PNP silicon planar epitaxial : | transistors designed for small signal general : | purpose amplifiers and switches. \\ | ABSOLUTE MAXIMUM RATINGS , Collector-Base Voltage VcBO 25V | Collector-Emitter Voltage (VgE=0) VCES 25V | Collector-Emitter Voltage (Ig=0) VcEO 25v | Emitter-Base Voltage VEBO 4V | Collector Current-Continuous I¢ 500mA | Total Power Dissipation (Ta=25¢0} Ptot 625nW | C= | Operating Junction & Storage Temperature Tj,Tstg -55 to +150°C | TYPICAL CHARACTERISITICS (T,=25°C) i HEE (NORMALIZED) vs IC SATURATION VOLTAGE valle "1 |

16 ILE ie eat iirea iota : |

2 og Hcl N 0.8 [Vee (sar) het oo , CT | erm TT | ‘ VCE=1OV Le ear) aa alte | HHH pute SC LMEGM EE TIM or 1 10. 100 1000 1 10 100 98 1900 5 , MICRO ELECTRONICS LTD, 2 #47 BRA A) | 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex:43510 Micro HX. | P.O, 8069477, Kwun Tong, Tel: 3-430181-6-3-699963,3-92403,-3-808224 FAX: 3-410321 |

  • ns } ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) | PARAMETER SYMBOL TEST CONDITIONS | Collector-Base Breakdown Voltage BVCBO 25 Vv Ic=100uA =IE=0 ~ , Collector-Emitter Breakdown Voltage | BVCES 25 Vv Ic=100pA VBE=0 | Collector-Emitter Breakdown Voltage | LVcEO 25 Vv Ic=10mA Ip=0* } Emitter-Base Breakdown Voltage BVEBO 4 v TE=100pnA Ic=0 } Collector Reverse Current Ices 35] nA | VcE=15V VBE=0 | 2| pA | VcE=15V Ta=65°C | D.C. Current Gain PN3638 | HFE 20 Ic=10mA VcE=10V |

30 Ic=50mA VCE=1V* ,

20 Ic=300mA VcCE=2V* |

PN3638A | HFE 80 Ic=ImA = VcE=10V ,

100 Ic=10mA VcE=10V |

100 Ic=50mA VcE=1V* |

20 Ic=300mA VcE=2V* |

Collector-Emitter Saturation Voltage | VCE(sat) 0.25) V Ic=50mA Ip=2.5mA* | 1.0] V I¢=300mA Ip=30mA “~ } Base-Emitter Saturation Voltage VBE(sat) 1.1 Vv Ic=50mA Ip=2.5mA* . | 0.8 2.0} V Ic=300mA Ip=30mA* Current Gain-Bandwidth PN3638 | fT 100 MHz | Ic=50mA VCE=3V | Product PN3638A 150 f=100MHz | (Output Capacitance PN3638 | Cob 20 | pF | VcBEIOV Ig=0 f=1MHz | PN3638A 10 . } Input Capacitance Cib 25 | pF | VEB©0.5V IO f=1MHz | * Pulse Test : Pulse Width = 300uS, Duty Cycle = 1%. ° | h-PARAMETER @ IC=10mA VcE=10V_f=1KHz , PN3638 PN3638A } Small Signal Current Gain hfe 25 | Input Resistance hie 1.5 KQ | (Output Conductance hoe 1.2 mmhos 9 | Voltage Feedback Ratio hre 2.6 x1078 |