PN4249

PN4248 MICRO-ELECTRONICS | Alldatasheet

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Technical content

. te et oo VY L PN4248, PN4249, PN4250 a LYO : PNP SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS — TT csp quapegpamacageoning cigarettes A ~ bores Sree PN42248, PN4249, PN4250 are PNP silicon CASE TO-92A planar transistors for AF low noise preamplifier . applications. . i oe EBC ABSOLUTE MAXIMUM RATINGS Pn4248 PN4250 PN4249 Collector-Base Voltage ~VoBo 40V 40V 60V Collector-Emitter Voltage -VCEO 40V 40V 60V Emitter-Base Voltage -VEBO Sv 5v 5Vv Collector Current -Ic¢ 50mA Total Power Dissipation (TC<65°C) Prot 300mW (Ta <250¢) 200mW

1 Operating Junction & Storage Temperature Tj, Tstg -55 to 125°C

‘SLECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Px4248 | P.N4249 | PN4250 PARAMETER SYMBOL MIN MAX| MIN MAX | MIN MAX UNIT) TEST CONDITIONS Collector-Base Breakdown Voltage] -BVcBO 40 60 40 v -Ic=0.0lmA Ip-0 Collector-Emitter Breakdown -BVcES 40 60 40 v -Ic=0.01mA VpE=0 Voltage Collector-Emitter Breakdown -LVcEO 40 60 40 Vv -Ic=5mA (Pulsed) Voltage Ip=0 Emitter-Base Breakdown Voltage | =BVEBO 5 5 5 v -Ig=0.0lmA Ic=0 Collector Cutoff Current -IcBo 10 10 10} nA | -Vop=40V Izs0 3 3 3|paA | -Vop=40V In-0 TA=650C . Emitter Cutoff Current -IEBO 20 20 20}nA | -VEB=3V Ic=0 Collector-Emitter Saturation -Vcr(sat) 0.25 0.25 0.25/V -Ic=1l0mA _ ; Voltage | -Ip=0.5mA Base-Emitter Saturation -VpE(sat) 0.9 0.9 0.9/V -IC=10mA i Voltage -IB=0.5mA D.C. Current Gain HFE 50 100 300 | 250 700 ~Ic=100pA -VCE=5V 50 100 250 -Ic=lmA -VcE=5V 00 5 250 -Ic=10m4_-VCE= 5 38 HUNG TO ROAD, KWON TONG, HONG KONG. LEX 43510 MICRO ELECTRONICS LTD. ‘wun,tons Po, zoxtonr7 chats nooness “Micnorness FAX: 3410921

: i 1 - - - Continued - - - Px4248 | P4249 |P-N4250 PARAMETER SYMBOL MIN MAX | MIN MAX | MIN MAX UNIT TEST CONDITIONS Small Signal Current Gain hfe 50 1000}100 550 | 250 800 -Ic=lmA -VoE=5V f=1kHz t Tynut Impedance hie 2.5 17 6 20 | KN] -Ic=lmA -VCE=5V f=lkHz a Output Admittance Hoe 5 40 5 50 po -Ig=lmA -Vog=5V f=1kHz Voltage Feedback Ratio hre 10 |. 10 |xl0 | -Ig=lmA -VoE=5V f=1kHz Current Gain-Bandwidth Product] fp 40 40 50 MHz| -Ig=0.5mA -VcoR=5V Collector-Base Capacitance Cob 6 6 6 | pF | -Vop=5V Ig=0 f=1MHz Emitter-Base Capacitance Cib 16 16 16 | pF | -Vgp=0.5V Ic=0 . f=1MHz : Noise Figure NF 3 2 |] dB | -Ic=20pA -Vep=5V Rg=l0K@ f=1LkHz 3 2 | 4B -Ic=20nA -VeE=5V Rg=10Ka@ f=10Hz-10 kHz 3 2 | dB | -Ic=250uA -VoE=5V Rg=lKN f=lkHz tl ~~ :