PN3569 MICRO-ELECTRONICS | Alldatasheet
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Le; ME NPN SILICON PLANAR EPITAXIAL TRANSISTOR \\ y, eee ee — ~ MICRO ELECTRONICS j GENERAL DESCRIPTION : MECHANICAL OUTLINE \\ The PN 3569 is an NPN silicon planar epitaxial transistor TO-92A designed for amplifier and swit- . . ching applications for collector current up to 500mA. EBC ABSOLUTE MAXIMUM RATINGS : Continuous Power Dissipation @ Tg=25°C, Pd 0.3W Continuous Power Dissipation @ Tg=25°C, Pd 0.8W Maximum Collector Junction Temperature, Ts 125°c Storage Temperature Range, Tstg -55°C to + 125°C Soldering Temperature (10 sec. time limit) 260°C Collector to Base Voltage, Vopo 80V Collector to Emitter Voltage, Vero 40V
7 Emitter to Base Voltage, Vypo 5V
ELECTRICAL CHARACTERISTICS @ Tye25°C (unless otherwise stated) + Collector-Base Breakdown Voltage BVcR0 80 Vv Tg=100ua Iyr0 i Collector-Emitter Sustaining Voltage Vogo(sust )* 40 Vv Tgn30ma I T,r0 i Emitter-Base Breakdown Voltage BVzpo 5 Vv Tyzl0ua Ign ' Collector Cutoff Current Topo 50 nA |Vog=40V Iye0 Collector Cutoff Current Topo 5 uA | Vgg=hOV Tyo Tyr 75°C i Collector-Emitter Saturation Voltage VoE(sat) 0.25 v Tgel50ma Igeloma i on | Base-Emitter Saturation Voltage VaR (sat) 1.1 v Tge150mA Ty-15mA | 5 * p 3 D.C. Current Gain _ hep 100 300 Vogt lV Igu150mal | MICRO ELECTRONICS LTD. initioue PESSULMSAasoiRss eke Fae: 3 vret TELEPHONE:- 3-430181-6, 3-893363,—3-092423,—3-008224
PARAMETER MIN TYP MAX |UNIT | TEST CONDITIONS | i * = = D.C. Current Gain hee 100 Veg’ ‘lV ig 30mA High Frequency Current Gain he, 3 Vggr lov Tgr50mA f=20Mc Output Capacitance Cob 18 20] pF | V,,=10V Iyr0 /~ cB JN Input Capacitance \\. Cib 4h 80] pF Vggr0.5V 1,70 # Pluse Conditions : Length=300uS, duty cycle=1% wn id va | 7 eae a ae CO