PN3568 MICRO-ELECTRONICS | Alldatasheet
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Technical content
: NPN } ~ Y SILICON | & TRANSISTOR | PN3568 is NPN silicon planar epitaxial transistor TO-92 designed for amplifier and switching applications for collector current up to 500mA. ABSOLUTE MAXIMUM RATINGS ec Collector-Base Voltage VcBo —_— 80V Collector-Emitter Voltage VcEO 60V Emitter-Base Voltage VeBo 5V Collector Current Ic 500mA Total Power Dissipation Prot 600mW Operating Junction & Storage Tmeperature Ty Tstg -§5 to +150°C /—~ ELECTRICAL CHARACTERISTICS (T,=25°C) PARAMETER SYMBOL TEST CONDITIONS | ICollector-Base Breakdown Voltage BVcBO 80 Vv Ic=100yA Ip=0 | ICollector-Emitter Breakdown Voltage | LVCEO 60 Vv Ic=10mA Ip=0* Emitter-Base Breakdown Voltage BVEBO 5 Vv Ig=10pA Ic=0 Collector Cutoff Current IcBo 50] nA |Vcp=40V Ig=0 D.C. Current Gain HE 40 Ic=30mA VcE=1V* 40 120 Ic=150mA VcE=1V* Collector-Emitter Saturation Voltage | VCE(sat) 0.25} V Ic=150mA Ip=15mA Output Capacitance Cob 20| pF |Vcg=10V f=1MHz Current Gain-Bandwidth Product fT 60 600} MHz | Ic=50mA VcE=1V | * Pulse Test : Pulse Width = 300uS, Duty Cycle = 2%. MICRO ELECTRONICS LID. 32%} PRA 5) 38 Hung To Road, Kwun Tong, Kowloon, Hong Kong. Cable: Microtron, Hong Kong. Telex:443510 Micro Hx. | P.O. BoxX0477, Kwun Tong. Tel: 3-430181-6, 2-803363-3-892423,-3-89822+ FAX: 3410321 |