PN3567 MICRO-ELECTRONICS | Alldatasheet
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2 PN3567
5 NPN
(eerie DESCRIPTION TO-92 PN3567 is NPN silicon planar epitaxial transistor designed for amplifier and switching i applications i EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Veso 80V Collector-Emitter Voltage Vceo 60V Emitter-Base Voltage Veso 5V Collector Current lo 500mA Continuous Power Dissipation Pg 600mW Operating & Storage Junction Temperature Ti Tstg -55 to +150°C ELECTRICAL CHARACTERISTICS (Ta=25°C) PARAMETER SYMBOL |MIN MAX TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO 80 Vv Ic=100pA Ig=0 Collector-Emitter Breakdown Voltage | LVCEO 40 V Ic=10mA Ip-0* Emitter-Base Breakdow: Voltage BVEBO. 5 Vv Ig=10pA Ic=0 Collector Cutoff Current IcBo 50] nA |Vcp=40V IE=0 D.C. Current Gain HFE 40 Ic=30mA VcE=1V* 40 120 Ic=150mA VcE=1V* Collector-Emitter Saturation Voltage | VCE(sat) 0.25; V Ic=150mA Ip=15mA {Output Capacitance Cob 20 | pF | VcB=10V f=1MHz | | iCurrent Gain-Bandwidth Product fT ' 60 600! MHz :Ic=50mA VcE=1V * Pulse Test : Pulse Width = 300»S, Duty Cycle = 2%. -_~ BZ MICRO ELECTRONICS LTD. @7;, 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong