PN3565 MICRO-ELECTRONICS | Alldatasheet
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Technical content
3 PN3565 |
& | S PNP | _ zZ SILICON | TRANSISTOR } DESCRIPTION TOS2A | PN3565 is PNP silicon planar | transistor designed for AF small | signal amplifier stages. i | ABSOLUTE MAXIMUM RATINGS | Collector-Emitter Voltage VCEO 25V | Collector-Base Voltage VCBO 30V | Emitter-Base Voltage VEBO 6V | Collector Current IC 50mA | Continuous Power Dissipation Pd 300mW | Operating & Storage Junction Temperature Tj, Tstg -55 to +150°C | ELECTRO-OPTICAL CHARACTERISTICS (Ta=25°C) | Collector-Emitter Breakdown Voltage | LVCEO | 25 Vo jIC=2mA IB=0 | Collector-Base Breakdown Voltage BVCBO 30 Vv jIC=100nA_ IE=0 | Emtter-Base Breakdown Voltage BVEBO 6 VIE=10nA Ic=0 | Collector Cutoff Current ICBO 50 nA |VCB=25V_ IE=0 | Emitter Cutoff Current IEBO 100 nA |VEB=3V IC=0 | D.C. Current Gain HFE 150 600 IC=1mA VCE=10V | HFE 70 IC=1002A VCE=10V | Collector-Emitter Saturation Voltage | VCE(sat) 0.35 VjIC=imA IB=0.1mA | Current Gain Bandwidth Product fT 40 MHz |IC=ImA VCE=5V | Output Capacitance Cob 4 pF |VCB=5V f=1MHz | * Pulse test : pulse width <300pS, duty cycle < 2%. | ~ BZ MICRO ELECTRONICS LTD. , Mf, 38, Hung To Road, Microtron Bulding, Kwun Tong, Kowloon, Hong Kong. |