PM505BA SGMICRO | Alldatasheet

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REV1.0 F-7-03 P-Channel Enhancement Mode Field Effect Transistor PM505BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 40mΩ -4A G S D ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS ±8 V Continuous Drain Current TA = 25 °C ID A TA = 70 °C -3 Pulsed Drain Current1 IDM -21 Power Dissipation TA = 25 °C PD 0.9 W TA = 70 °C 0.6 Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient2 RJA 126 °C/W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250A -20 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250A -0.3 -0.6 -1 Gate-Body Leakage IGSS VDS = 0V, VGS = ±8V ±100 nA Zero Gate Voltage Drain Current IDSS VDS = -16V, VGS = 0V -1 VDS = -10V, VGS = 0V, TJ = 55 °C -10 Drain-Source On-State Resistance1 RDS(ON) VGS = -1.5V, ID = -1A 67 100 mΩ VGS = -1.8V, ID = -2A 50 71 VGS = -2.5V, ID = -3.5A 40 55 VGS =-4.5V, ID = -3.5A 33 40 G. GATE D. DRAIN S. SOURCE

REV1.0 F-7-03 P-Channel Enhancement Mode Field Effect Transistor PM505BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM Forward Transconductance1 gfs VDS = -5V, ID = -3.5A 17 S DYNAMIC Input Capacitance Ciss VGS = 0V, VDS = -10V, f = 1MHz 1157 pF Output Capacitance Coss 106 Reverse Transfer Capacitance Crss 76 Total Gate Charge2 Qg VDS = -10V , VGS =-4.5V, ID = -3.5A 11.9 nC Gate-Source Charge2 Qgs 1.6 Gate-Drain Charge2 Qgd 2.5 Turn-On Delay Time2 td(on) 22 nS Rise Time2 tr VDD = -10V, VGS = -4.5V 20 Turn-Off Delay Time2 td(off) ID  -3.5A, RG = 6Ω 59 Fall Time2 tf 13 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS -0.6 A Forward Voltage1 VSD IF = -3.5A, VGS = 0V -1.3 V Reverse Recovery Time trr IF = -3.5A, dlF/dt = 100A / S 11.4 nS Reverse Recovery Charge Qrr 2.9 nC 1Pulse test : Pulse Width  300 sec, Duty Cycle  2％. 2Independent of operating temperature.

REV1.0 F-7-03 P-Channel Enhancement Mode Field Effect Transistor PM505BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM 0 3 6 9 12 VDS=-10V ID=-3.5A CISS COSS CRSS 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 0.02 0.03 0.04 0.05 0.06 0 1 2 3 4 5 6 ID=-3.5A 0.02 0.04 0.06 0.08 0.1 0 3 6 9 12 15 VGS=-2.5V VGS=-1.8V VGS=-4.5V 25℃ 125℃ -20℃ 0 1 2 3 4 C , Capacitance(pF) -VDS, Drain-To-Source Voltage(V) -VGS , Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC) On-Resistance VS Drain Current RDS(ON)ON-Resistance(OHM) -ID , Drain-To-Source Current(A) On-Resistance VS Gate-To-Source Voltage RDS(ON)ON-Resistance(OHM) -VGS, Gate-To-Source Voltage(V) 0 1 2 3 4 5 VGS=-6.5V VGS=-5.5V VGS=-4.5V VGS=-3.5V VGS=-2.5V VGS=-1.8V VGS=-1.5V Output Characteristics -ID, Drain-To-Source Current(A) Transfer Characteristics -ID, Drain-To-Source Current(A) -VGS, Gate-To-Source Voltage(V) -VDS, Drain-To-Source Voltage(V) Capacitance Characteristic Gate charge Characteristics Characteristics

REV1.0 F-7-03 P-Channel Enhancement Mode Field Effect Transistor PM505BA SOT-23(S) Halogen-Free & Lead-Free NIKO-SEM DC 100ms 10ms 1ms 0.01 0.1 100 0.1 1 10 100 NOTE : 1.VGS= -4.5V 2.TA=25˚C 3.RθJA = 126˚C/W 4.Single Pulse Operation in This Area is Limited by RDS(ON) 0.001 0.01 0.1 1 10 100 Single Pulse RθJA = 126˚C/W TA=25˚C 25℃ 125℃ 100 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 VGS=-4.5V ID=-3.5A Normalized Drain to Source ON-Resistance TJ , Junction Temperature(˚C) Source-Drain Diode Forward Voltage -IS , Source Current(A) Safe Operating Area Single Pulse Maximum Power Dissipation -ID , Drain Current(A) Single Pulse Time(s) -VDS, Drain-To-Source Voltage(V) T1 , Square Wave Pulse Duration[sec] -VSD, Source-To-Drain Voltage(V) On-Resistance VS Temperature single pulse Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 Notes 1.Duty cycle, D= t1 / t2 2.RthJA = 126 ℃/W 3.TJ-TA = P*RthJA(t) 4.RthJA(t) = r(t)*RthJA Power(W) Transient Thermal Response Curve r(t) , Normalized Effective Transient Thermal Resistance