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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., L TD TO-92 Plastic-Encapsulate T ransistors PH2369 TRANSIS TOR (NPN)
FEATURES
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-b ase breakdown voltage V(BR)CBO I C= 100μA, IE=0 40 V Collector-emitter b reakdown voltage V(BR)CEO I C= 10mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO I E= 10μA, IC=0 4.5 V Collector cu t-off current ICBO V CB= 20V, IE=0 0.4 μA Emitter cut-off current IEBO V EB= 4V, IC=0 0.1 μA hFE1 V CE= 1V, IC= 10mA 40 120 DC current g ain hFE2 V CE= 2V, IC= 100mA 20 Collector-emitter satu ration voltage VCE(sat) I C=10mA, IB=1mA 0.25 V Base-emitter satu ration voltage VBE(sat) I C=10mA, IB=1mA 0.7 0.85 V Tran sition frequency fT VCE= 10V, IC=10mA f =100MHz 500 MHz Collector cap acitance Cc V CB=5V,IE=0,f=1MHz 4 pF Emitter capacit ance Ce V EB=1V,IE=0,f=1MHz 4.5 pF Turn-on time ton 10 nS Turn-off time toff VCC=3V, IC=10mA , IB1= 3mA 20 nS Symbol Para meter Value Unit VCBO Collector-Base V oltage 40 V VCEO Collector-Emitter Volt age 15 V VEBO Emitter-Base Voltag e 4.5 V IC Collector Curren t –Continuous 0.2 A PC Collector Powe r Dissipation 500 mW TJ Junction Te mperature 150 ℃ Tstg Storage Te mperature -55-150 ℃ TO-92 1. COLLECTOR 2. BASE 3. EMI TTER www.cj-elec.com 1 C,Dec,2015
A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.300 4.700 0.169 0.185 D1 3.430 0.135 E 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 Φ 1.600 0.063 h 0.000 0.380 0.000 0.015 Symbol Dimensions In Millimeters Dimensions In Inches 1.270 TYP 0.050 TYP TO-92 Suggested Pad Lay out www.cj-elec.com 2 C,Dec,2015
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