PT4600 SHARP | Alldatasheet

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Outline Dimensions (Unit : mm) Absolute Maximum Ratings Double Ended Mold Type Phototransistors 1. Compact double ended mold package PT4600/PT4600F/PT4610/ PF4610F/PF4650F (Packaging area : 37% smaller thanPT480 ) Light sensitivity : 3 times as large asPT460 series) 4. Taped model (2,000 pieces/reel) also available 1. Floppy disk drives 2. VCRs 3. Audio equipment 4. Video-movie kits 3. Darlington output type (PT4610 ), visible light cut-off type (PT4600F/4610F/4650F), VCR tape end detection type (PT4650F ) available as standard * Tolerance :± 0.2 mm *1 For MAX. 3 seconds at the position of 2.5 mm from the resin edge Parameter Symbol Rating Unit Collector-emitter voltage V CEO 35 V Emitter-collector voltage V 6 V Collector current CI 20 mA50 Collector power dissipation PC 50 mW100 Operating temperature T opr -2 0 t o +8 5 ˚C Storage temperature T stg -4 0 t o +8 5 ˚C Soldering temperature T sol 260 ˚C*1 PT4600/PT4600F/PT4650F PT4610/PT4610F PT4610/PT4610F PT4600/PT4600F/PT4650F 0.7 0.5 0.25 1.8 2.3 3.0 3.0 4.0 0.4 R0.8 0.8 PT4600 PT4600F PT4650F PT4610F PT4610 MIN.14.0MIN.15.5 * 2 Mark 2.7MAX.

1 Emitter

2 Collector

  • 1 Epoxy resin PT4600/PT4600F/PT4610/PT4610F/PT4650F 2. Narrow beam angle(Half intensity angle : ± 20˚ Model * 1 Resin type * 2 PT4600 Transparent - PT4600F Black visible light cut-off- PT4610 Pale blue transparent - PT4610F Black visible light cut-offRed PT4650F Black visible light cut-offYellow ECO data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, n n n n

(Ta = 25˚C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector current I C Ee = 1mW/cm 2 V CE =5 V mA Ee = 0.01mW/cm 2 V CE =5 V Dark current I CEO Ee = 0, VCE = 20V - - 0.1 µ AEe = 0, VCE = 10V - - 1.0 V CE(sat) Ee = 10mW/cm 2 IC = 0.5mA - 0.2 0.4 VEe = 1mW/cm 2 IC = 2.5mA - - 1.2 Collector-emitter breakdown voltage BV CEO 35 - - V Emitter-collector breakdown voltage BV ECO 6--V Peak sensitivity wavelength λ p - -- nm-- tr -4 0 tf -3 5 tr - 2 000 - 1 500t f Half intensity angle Δθ -- - ˚ 800 860 400 300 Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) PT4600 PT4600F PT4650F PT4610 PT4610F PT4600/4600F/4650F PT4600/PT4600F PT4610/PT4610F PT4650F PT4610/PT4610F PT4600/4610 PT4600F/4610F/4650F PT4600/4600F/4650F PT4610/4610F V CE = 20V, IC = 1mA V CE = 2V, IC = 10mA IC = 0.1mA, *2Ee =0 IC = 0.01mA, *2Ee =0 R L =1 kΩ R L = 100Ω 0.95 0.55 0.55 0.6 0.4 ±2 0 2.80 1.85 1.2 3.05 2.0 µ s Fig. 1-a Collector Power Dissipation vs. Ambient temperature(PT4600/4600F/4650F) Fig. 1-bCollector Power Dissipation vs. Ambient temperature (PT4610/4610F) Electro-optical Characteristics Rise Fall Rise Fall Response time Response time Collector-emitter saturation voltage *2 Ee : Irradiance by CIE standard light source Collector power dissipation PC (mW) Collector power dissipation PC (mW) -25 0 25 50 75 100 -25 0 25 50 75 100 125 100 PT4600/PT4600F/PT4610/PT4610F/PT4650F 80 120 n

Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig. 3-a Relative Collector Current vs. Ambient temperature (PT4600/4600F/4650F) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Dark current ICEO (A) Dark current ICEO (A) Fig. 4-a Collector Current vs. Irradiance (PT4600/4600F/4650F) Fig. 2-a Dark Current vs. Ambient temperature (PT4600/4600F/4650F) Fig. 2-b Dark Current vs. Ambient temperature (PT4610/4610F) Fig. 4-b Collector Current vs. Irradiance (PT4610/4610F) Fig. 3-b Relative Collector Current vs. Ambient temperature (PT4610/4610F) -25 50 0 25 75 100 100 125 150 -10 10 -11 10-9 - 25 2505 0 10-6 10-7 10-8 10-4 10-5 100750 25 50 75 100 125 10 -6 10 -7 10 -8 10 -9 10 -1 0 0 25 50 75 100 125 150 100 120 140 160 1.0 100 0.01 100 0.1 V CE =5 V = 25˚C 175 V CE = 20V V CE = 10V V CE =5 V

2 V CE = 10V

V CE =5 V = 25˚C 150 Ev Ee = 1mW/cm Ta Ta PT4610 PT4610F PT4600F/4650F PT4600 PT4600/PT4600F/PT4610/PT4610F/PT4650F Relative collector current (%) Relative collector current (%) Collector current IC (mA) Collector current IC (mA) = 2 lx Irradiance Ee (mA/cm2) Irradiance E e (mW/cm 2)

Fig. 7-a Response Time vs. Load Resistance (PT4600/4600F/4650F) Response time tr,tf (µ s) Load resistance RL (kΩ ) Fig. 8 Radiation Diagram Test Circuit for Response Time Test Circuit for Response Time Collector-emitter saturation voltage VCE(sat)(V) (PT4600/4600F/4650F) Fig. 7-b Response Time vs. Load Resistance (PT4610/4610F) (PT4610/4610F) Fig. 9-a Collector-emitter Saturation Voltage vs. Irradiance (PT4600) PT4600/PT4600F/PT4610/PT4610F/PT4650F Angular displacementθ 5005010 20 100 200 5000 1000 V CE =2 V IC = 10mA = 25˚C = 25˚C IC = 1mA V CE = 20V 200 100 500 1000 100 t f td ts tr 21 5 10 50 20 100 tr tf tr td 10% tf ts tr R L R L 90% tf 10% 90% 100 -1 0-2 0 0 -9 0 -8 0 -7 0 -6 0 -5 0 -4 0 -3 0 T a Vcc Vcc T a OutputInput Output OutputInput Output 10 20 1.2 0.8 0.6 0.4 0.2 1.4 0.1 1 0.5 2 50.2 10 Ta = 25˚C Ic = 2.0mA Ic =Ic =Ic = 0.25mA 0.5mA 1.0mA Response time (µ s) Load resistance RL (Ω ) Irradiance Ee (mW/cm )2 50 50 Relative sensitivity (%)

Fig. 9-b Collector-emitter Saturation Voltage vs. Irradiance(PT4600F/PT4650F) Collector-emitter saturation voltage VCE(sat)(V) Collector-emitter saturation voltage VCE(sat)(V) Collector-emitter saturation voltage VCE(sat)(V) Fig. 9-c Collector-emitter Saturation Voltage vs. Irradiance (PT4610) Fig. 9-d Collector-emitter Saturation Voltage vs. Irradiance (PT4610F) Please refer to the chapter "Precautions for Use". (Page 78 to 93) 0.01 0.1 1 2mA 5mA 10mA 0.4 0.6 0.8 1.2 1.4 10.2 2 0.5 5 Ta = 25˚C Ta = 25˚C 2.2 1.8 1.6 1.4 1.2 0.6 0.4 0.2 Ic = 1mA Ic = Ic = Ic = 3mA Ic = 0.02 0.05 0.2 0.5 0.01 0.1 1 2mA 5mA 10mA Ta = 25˚C 2.2 1.8 1.6 1.4 1.2 0.6 0.4 0.2 Ic = 1mA Ic= Ic = Ic = 3mA Ic = 0.02 0.05 0.2 0.5 PT4600/PT4600F/PT4610/PT4610F/PT4650F 0.1 0.2 Ic = Ic = Ic = Ic = 0.25mA 0.5mA 1.0mA 2.0mA Irradiance Ee (mW/cm 2) Irradiance Ee (mW/cm 2)Irradiance Ee (mW/cm 2) l