PE1520 DOINGTER | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=150V,ID=40A, RDS(ON)<45mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 V ID Continuous Drain Current- TC=25℃ 40 A Continuous Drain Current-TC=100℃ 29 EAS Single Pulse Avalanche Energy(note1) 310 mJ PD Power Dissipation 140 W IAR Avalanche Current (note2) 40 A TJ, TSTG Operating and Storage Junction Temperature Range -55-+175 ℃ TL Maximum lead temperature for soldering purpose,1/8” from case for 5 seconds 300 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.07 ℃/W D S G V PE1520 All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 150 170 --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=150V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics (Note 3) VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 2.5 3.2 4.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=18A --- 35 45 mΩ GFS Forward Transconductance VDS=15V,ID=18A 38 --- --- S Dynamic Characteristics(Note 4) Ciss Input Capacitance VDS=25V, VGS=0V, f=1MHz --- 3850 --- pF Coss Output Capacitance --- 185 --- Crss Reverse Transfer Capacitance --- 86 --- Switching Characteristics(Note 4) td(on) Turn-On Delay Time VDD=30V, , ID=2A, RL=15Ω VGS=10V ,RG=2.5Ω. --- 17.8 --- ns tr Rise Time --- 11.8 --- ns td(off) Turn-Off Delay Time --- 56 --- ns tf Fall Time --- 14.6 --- ns Qg Total Gate Charge VGS=10V, VDS=30V ID=30A --- 105 --- nC Qgs Gate- --- 21 --- nC Qgd Gate-Drain Charge --- 31.5 --- nC Drain-Source Diode Characteristics VSD Diode Forward Voltage (Note 3) VGS=0V ,IS=18A --- 0.82 1.2 V Is Diode Forward Current(Note 2) --- --- --- 40 A PE1520 All d ata sheet.com
www.doingter.cn — 5 — Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Effective Transient Thermal Impedance PE1520 0086-0755-8278-9056 All d ata sheet.com