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Solderable Silicon Photodiodes PDB-C613-2 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The PDB-C613-2 is a silicon red enhanced solderable photodiode designed for low capacitance and high speed for photoconductive
applications
- Red enhanced
- Photoconductive
- High quantum efficiency RELIABILITY APPLICATIONS This Luna high-reliability de vice is in principle able to meet military test requirements (Mil -STD-750, Mil -STD-883) after proper screening and group test. Contact Luna for recommendations on specific test conditions and procedures.
- Optical encode
- Position sensor
- Industrial controls
- Instrumentation ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 75 V Ta = 23°C UNLESS OTHERWISE NOTED Storage Temperature -40 - 125 °C - Operating Temperature -40 to +100 °C - Soldering Temperature - - +224 °C - PACKAGE DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] SOLDERABLE PHOTODIODE.035 [0.89] .348 [8.84] ACTIVE AREA .385 [9.78] ACTIVE AREA .393 [9.98] SQUARE 2X 6.25 [158.7] 2X .250 [6.35] 2X TINNEDRED 30 AWG PVC WIRE, ANODE BLACK 30 AWG PVC WIRE, CATHODE .014 [0.36] .021 [0.53] ± .050 [1.27]
Solderable Silicon Photodiodes PDB-C613-2 WWW.LUNAINC.COM Precision – Control – Results Information in this technical data sheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO-ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Short Circuit Current H= 100 fc, 2850 K 0.70 1.0 - mA Dark Current VR = 5V - 90 180 nA Shunt Resistance VR = 10 mV 0.5 1.0 - MΩ Junction Capacitance VR =5V; f = 1 MHz - 350 - pF Spectral Application Range Spot Scan 350 - 1100 nm Breakdown Voltage I=10 µA 25 50 - V Noise Equivalent Power VR =0V@λ= Peak - 3x10-13 - W/Hz1/2 Response Time RL = 50Ω,VR = 5 V - 50 - nS TYPICAL PERFORMANCE SPECTRAL RESPONSE