PDB-C201 LUNA | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

Blue Enhanced Bi-Cell Silicon Photodiode PDB -C201 WWW. LUNAINC .COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 1/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 DESCRIPTION FEATURES The PDB -C201 is a blue enhanced Bi-Cell silicon photodiode used dir nulling, centering, or measuring small positional changes packages in a hermetic TO-5 metal package.

  • Low Capacitance
  • Blue Enhanced
  • High Speed
  • Low Dark Current RELIABILITY APPLICATIONS Contact Luna for recommendations on specific test conditions and procedures.
  • Emitter Alignment
  • Position sensing
  • Medical and Industrial ABSOLUTE MAXIMUM RATINGS SYMBOL MIN MAX UNITS Reverse Voltage - - 100 V T a = 23°C UNLESS OTHERWISE NOTED Storage Temperature -55 - 1 50 °C - Operating Temperature - 40 to + 125 °C - Soldering Temperature* - - +240 °C - * 1/16 inch from case for 3 seconds max.

Blue Enhanced Bi-Cell Silicon Photodiode PDB -C201 WWW. LUNAINC .COM Precision – Control – Results Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Page 2/2 REV 01-04-16 © 2016 Luna Optoelectronics. All rights reserved. Luna Optoelectronics, 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 OPTO -ELECTRICAL PARAMETERS Ta = 23°C UNLESS NOTED OTHERWISE PARAMETER TEST CONDITIONS MIN TYP MAX UNITS Short Circuit Current H= 100 fc, 2850 K 50 75 - V Dark Current V R = 5 V - 0.5 2.0 nA Shunt Resistance V R = 10 mV 250 500 - M Ω Junction Capacitance V R =10V; f = 1 MHz - 15 - pF Spectral Application Range Spot Scan 350 - 1100 nm Breakdown Voltage I=10 µA 50 75 - V Noise Equivalent Power VR =0V@ λ= Peak - 1x10-14 - W/√ Hz Response Time RL = 1KΩ,VR = 0 V - 190 - nS RL = 1KΩ,VR = 10 V - 13 - Response time of 10% to 90% is specified at 660nm wavelength light. TYPICAL PERFORMANCE SPECTRAL RESPONSE