PD663PS

PD663PS SHARP | Alldatasheet

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PD663PS/PD666PS 6-division photodiodes n Outline Dimensionsn Features n Applications n Absolute Maximum Ratings 2. With non-reflective layer (Unit: mm) (Unit: µm) (Ta=25˚C) PD663PS PD666PS *1 For MAX. 3 seconds at the position of 1.0mm from the resin edge 1. For 3 beams(6-division photodiodes) 3. Transparent transfer molded package 1. Optical pick-up for CD player Enlarged Figure of Light Detecting Portion B2 B4 200 160 67.5 4067.5 160 97.5 97.5 200 45˚–3˚ X'X Y 150 150 72.5 72.5 X X' Y 72.572.5

250 A2 A1

Parameter Symbol Ratings Unit Reverse voltage V R 30 V Operating temperature T opr -25 to +85 ˚C Storage temperature T stg -40 to +85 ˚C Soldering temperature*1 T sol 260 ˚C 5678 4321 Internal connection diagram A2 B3 B4 A1B1B2 1 3 4 Anode 5 7 8 Anode 2 6 Cathode 13 4 87 6 5 X'X Y Chip (Light detecting portion) 0.63 0.15 Transparent epoxy resin5.0–0.1 1.5–0.1 10˚10˚ 10˚10˚ 0.97 12.4 2.5–0.2 1.27 0.4 0.5 4.0–0.1 2.0 –0.2 Detector center 1.2 2.2 PD663PS/PD666PS data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,

n Absolute Maximum Ratings Parameter Symbol Conditions MIN. TYP. MAX. V R IR =10mA V R C t λP - V R (Ta=25˚C) Unit*6 A B A B A B A B A,B A B A,B A,B Short circuit current Reverse voltage Dark current Terminal Capacitance Peak sensitivity wavelength Cut-off frequency Sensitivity ISC Id C S E V =1000 lx =15V =15V f=1MHz V R =15V, R L=50Ω Output: -3dB at 500 kHz λ=780nm 0.45 340 400 490 120 570 100 840 0.55 640 160 740 130 300 200 0.65 nA nA nA nA V pA pA pF pF nm MHz MHz A/W *2 Values in each element. Elements other than subject elements shall be measured while the anode and the cathode are short-circuited to each other. *3 Short-circuit currents at two segments on both ends and four segments on the center of the element shall be within –10% of the average. *5 Values in each element. *6 Like signs represent like elements in the light detector. B B BBAAB B BB AA PD663PS PD666PS Fig.2 Spectral SensitivityFig.1 Power Dissipation vs. Ambient Temperature Power dissipation P (mW) Ambient temperatuer Ta (˚C) Relative sensitivity (%) Wavelength λ (nm) f PD666PS *4 Ev:Illuminance by CIE standard light source A(tungsten lamp)( PD663PS 100 Ta=25˚C 0400 500 600 700 800 900 1000 1100 100 0-25 0 25 50 75 100 PD663PS/PD666PS *2 *3

Fig.4 Dark Current vs. Reverse VoltageFIG. 3 Dark Current vs. Ambient Temperature Fig.5 Terminal Capacitance vs. Reverse VoltageFig.6 Relative Sensitivity vs. Ambient Temperature Fig.7 Responce Time vs. Load Resistance Fig.8 Frequency Response Dark Current Id (A) Dark Current Id (A) Ambient Temperature Ta (˚C) Ambient Temperature Ta (˚C) Reverse Voltage VR (V) Reverse Voltage VR (V) Terminal Capacitance Ct (pF) Relative output (%) Load Resistance RL (kΩ ) responsivity (dB) frequency f (MHz) Responce Time tr,tf (µs) -25 0 25 50 75 100 -13 -12 -11 -10 A B A: Tracking pattern B: Focusing pattern V R= 15V A B 10 0.01 0.1 1 10 100 -13 -12 -11 -10 A: Tracking pattern B: Focusing pattern Ta=25˚C 0.1 0.2 0.5 1 2 5 10 20 50 B A A: Tracking pattern B: Focusing pattern f=1MHz Ta=25˚C 100 105 110 -25 0 25 50 75 100 1000lx A Light source Output at Ta=25˚:100% V R =10V Ta=25˚C tr' tf 0.1 0.5 1 5 10 50 100 +2 V =15V R L= 50Ω Ta=25˚C Input: Laser diode (λp=780mm) PD663PS/PD666PS