PD49PI

PD49PI SHARP | Alldatasheet

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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, PD49PI/PD481PI PD49PI/PD481PI Symbol Rating Unit V R 32 V P 150 mW Topr - 25 to + 85 ˚C Tstg - 40 to + 100 ˚C Tsol 260 ˚C Parameter current PD49PI PD481PI temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength PD49PI PD481PI Symbol I SC β T Id T C t λ P MIN. TYP. MAX. 2.4 3 - 3.5 5 - - 0.2 - -1 3 0 3.5 5 -2 0 5 0 910 960 Unit µ A % /˚C nA times/10˚C pF nm Parameter Reverse voltage Power dissipation Operating temperature Storage temperature *1 Soldering temperature n Features 1. High sensitivity 2. Peak sensitivity wavelength matching 3. Built-in visible light cut-off filter n Applications *For 10 seconds at the position of 2.3mm from the bottom face of resin package with infrared LED VCRs, audio equipment and air condi- tioners, etc. *2 EV : Illuminance by CIE standard light source A (tungsten lamp) *2 Short circuit *2 Short circuit current 7.3 (Chip location) 0.9 0.9 0.5 0.5 0.3 1.3 2.7± 0.2 1.4 0.5 n Outline Dimensions (Unit : mm) Conditions E V E V V R = 10V V R = 10V V R = 3V, f= 1MHz n Electro-optical Characteristics (Ta = 25˚C) Photodiode Rest of gate (λ p= 1000nm: PD49PI ) (λ p= 960nm: PD481PI ) (ISC V PD481PI ) n Absolute Maximum Ratings (Ta = 25˚C)

1 Anode

2 Cathode

( Visible light cut-off type) center High Speed, High Sensitivity >=3.5µ A at E Detector 1. Infrared remote controllers for TVs, = 100lx: = 100lx = 100lx 1 000 1 010 α 7.0± 0.2 7.6± 0.2 0.4MAX. 1.3MAX. 1.3MAX. 5.08± 0.1 13.0± 1.0

-2 5 100 150 200 0 25 50 75 100 -2 5 0 25 50 75 100 0.05 0.1 0.2 0.5 1 2 5 10 20 50 - 25 0 25 50 75 100 100 120 140 160 f = 1MHz A 600 100 PD49PlPD481Pl Fig. 2 Spectral Sensitivity 700 800 900 Relative sensitivity (% ) Wavelength λ (nm ) T a = 25˚C Fig .1 Power Dissipation vs. Ambient TemperaturePower dissipation P (mW ) Fig. 3 Dark Current vs.Dark current Id (A ) Ambient temperature Ta (˚C) 10-6 10-7 10-8 10-9 10-1 0 10-1 1 10-1 2 V R = 10V 10-7 10-8 10-9 10-10 10-11 Dark current Id Reverse voltage VR 552 5 2 25 25 Ta= 25˚C Terminal capacitance Ct (pF ) Reverse voltage VR ( Test circuit) PD481Pl Ambient temperature Ta (˚C) Relative output (% ) Ambient Temperature Fig. 4 Dark Current vs. Reverse Voltage Ambient temperature Ta (˚C) Fig. 6 Relative Output vs. Ambient TemperatureFig. 5 Terminal Capacitance vs. Reverse Voltage (A ) 10-2 10-1 (V ) (V ) PD49PlGL537 GL538 Distance between infrared light emitting diode and photodiode shall be fixed Isc = 100 µ A at IF = 20mA and T a= 25˚C T a= 25˚C 1000 1100 1200 101 (Emitter: GL537/GL538,Detector: PD49PI/PD481PI )

Test Circuit for Responce Time Relative output (% ) Angular displacement θ - 90˚ - 80˚ - 70˚ - 60˚ - 50˚ - 40˚ -20˚ -10˚ - 30˚ 0 +10˚ +20˚ +30˚ +40˚ +60˚ +50˚ +70˚ +80˚ +90˚ 100 2 5 2 5 2 5 2 5 Input Output Laser diode Pulse generator Output 10V+PD481PI 90% 10% Relative radiant intensity (% ) Fig. 7 Sensitivity Diagram V R = 10V T a= 25˚C 102 100 10 -1 10 -2 10 102 103 104 105 L (Ω ) IOUT = 0.1mA PD49PI/ tr tf RL Fig. 8 Relative Output vs. Distance (T a = 25˚C) Responce time tr, tf (µ s) (Emitter:GL537/GL538 0.1 100 GL538 10-4 10-3 10-2 10-1 GL537 IF = 20mA T a= 25˚C Distance between emitter and detector d (mm ) l Please refer to the chapter “ Precautions for Use.” Detector:PD49PI/ PD481PI) Fig. 9 Responce Time vs. Load Resistance Load resistance R