PD480

PD480PI SHARP | Alldatasheet

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data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, PD480PI/PD480PI1 n Features 3. Compact n Applications 1. Game machines 2. Optoelectronic switches 3. Infrared remote controllers for TVs, *1 For 3 seconds at the position of 2.5mm from the at RL =1 kΩ ) VCRs, audio equipment, air conditioners, etc. surface of resin edge Parameter Symbol Rating Unit Reverse voltage V R 20 V Power dissipation P 75 mW Operating temperature T opr - 25 to + 85 ˚C Storage temperature T stg - 40 to + 85 ˚C *1 Soldering temperature T sol 260 ˚C High Speed, Narrow Acceptance Photodiodes 2. Narrow acceptance (Δθ : TYP. ± 20˚) *2 E V : Illuminance by CIE standard light source A (tungsten lamp) 0.75 1.15 1.7 1.7 gate Rest of 1.15 0.75 2.54 2.8 2.8 2.54 Rest of gate PD480PI1 2- C0.5 MIN. 2- 0.4 2-C0.5 1.0 2-0.4 n Outline Dimensions (Unit: mm) Parameter Symbol Conditions *2Short circuit current ISC E V Dark current I d V R = 10V, E V =0 Terminal capacitance C t V R = 0, f= 1MHz Peak sensitivity wavelength λ p Response time t r , tf R L =1 kΩ , V R = 10V Half intensity angle Δθ n Absolute Maximum Ratings (Ta = 25˚C) n Electro-optical Characteristics(Ta= 25˚C) PD480PI

1 Anode

2 Cathode

1.5 Detector center Transparent epoxy resin Transparent epoxy resin 1.5 Detector center 0.15 0.15 PD480PI/PD480PI1 MIN. TYP. MAX. Unit 1.0 1.7 2.4 µ A - - 10 nA - 4.0 10 pF 950 -n m - 100 250 ns -- ±2 0 - 17.5+ 1.5 - 1.0 60 ˚ 1.6 60 ˚ 1.6 0.8MAX. 0.8MAX. 3.0± 0.2 0.5MIN. 4.0± 0.2 2.15± 0.2 2.95± 0.2 R0.8± 0.1 0.3MAX. 3.0± 0.2 R0.8± 0.1 0.3MAX. 4.0± 0.215.5MIN. 0.5MIN. 2.15± 0.2 2.95± 0.2 1. High speed response (tr, tf: TYP. 100ns 4. Lead forming type (PD480PI1 ) = 100 lx

-25 0 25 50 75 100 -3 0 0 20 40 60 80 100 0.1 0.2 0.5 1 2 5 10 20 50 100 f = 1MHz 100 400 500 600 700 800 900 A GL480 PD480Pl - 25 0 25 50 75 100 100 120 140 160 Fig. 1 Power Dissipation vs. Fig. 2 Spectral SensitivityPower dissipation P (mW ) Ambient Temperature Ta (˚C) Relative sensitivity (% ) Wavelength λ (nm ) Fig. 3 Dark Current vs. Fig. 4 Dark Current vs. Reverse Voltage 10 -6 10 -7 10 -8 10 -9 10-1 0 10-1 1 10-1 2 Ambient temperature Ta (˚C) Dark current Id (A ) 10 -8 10 -9 10-10 10-11 10-12 10-13 10-3 10-2 10-1 10 10 2 Fig. 5 Terminal Capacitance vs. Relative output (% ) Ambient Temperature Ambient Temperature Reverse Voltage Dark current Id (A ) Reverse voltage VR (V ) Terminal capacitance Ct (pF ) Reverse voltage VR (V ) Ambient temperature Ta (˚C) V R = 10V Fig. 6 Relative Output vs. Ambient Temperature Distance between infrared light emitting diode and photodiode shall be fixed when I sc=2 5 µ A at IF = 20mA T a= 25˚C and T a= 25˚C. T a= 25˚C T a= 25˚C 1000 1100 1200

Test Circuit for Responce Time 0.01 Relative output (% ) 0.1 0.1 100 Angular displacement θ 100 100 tr tr Input Output Laser diode Pulse generator Output 10V+ 90% 10% +20˚+10˚0 +90˚ +80˚ +70˚ +50˚ +60˚ +40˚ +30˚- 30˚ - 40˚ - 50˚ - 60˚ - 70˚ - 80˚ - 90˚ GL480 PD480PI1 0.5 0.1 0.5 15 10 50 100 Fig. 7 Sensitivity Diagram Fig. 8 Relative Output vs. Distance 10 10 2 10 3 10 4 105 Responce time tr , tf (µ s) IF = 20mA T a= 25˚C V R = 10V T a= 25˚C IOUT = 0.1mA PD480PI/ RL Relative radiant intensity (% ) - 10˚- 20˚ tr, tf Distance between emitter and detector d (mm ) (T a = 25˚C) l Please refer to the chapter “Precautions for Use.” Fig. 9 Responce Time vs. Load Resistance Load resistance RL (Ω )