PD413PI SHARP | Alldatasheet
Document overview
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Technical content
Features
Applications
Outline Dimensions (Unit : mm) Detector center Rest of gate (2.54)
1 Anode
2 Cathode
R1.75 ± 0.1 2-0.45+ 0.2 -0.1 2-0.4+ 0.2 -0.1 Absolute Maximum Ratings Electro-optical Characteristics Parameter Symbol Rating Unit Reverse voltage Power dissipation Operating temperature Storage temperature Soldering temperature Parameter Symbol Conditions TYP. MAX. Unit Shortcircuit current Dark current Terminal capacitance Peak sensitivity wavelength Half intensity angle Response time -2 5t o+8 5 - 40 to + 100 E V = 100 lx MIN. PD413PI PD413PI 1. Built-in visible light cut-off filter 2. Half intensity angle :Δθ : ± 45˚ 1. Portable information terminal equipment 2. Personal computers 3. Printers *1 For 5 seconds at the position of 2.15 mm from bottom face of resin package Mark (blue) 2-0.77 V 4.5 5.4 8.1 960- - Forward voltage V F IF= 1mA -1 V *2 Ev : Illuminance by CIE standard light source A (tungsten lamp) (Sensitivity wavelength range : 750 to 1070 nm) data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, n n n n n
-2 5 100 150 200 50 75 100 85 52 52 52 52 510-2 10-1 T a = 25˚C Power dissipation P (mW) Ambient temperature Ta (˚C) Reverse voltage VR (V) Dark current Id (A) Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Spectral Sensitivity PD413PI Fig. 3 Shortcircuit Current vs. Illuminance Fig. 4 Dark Current vs. Ambient Temperature Fig. 5 Dark Current vs. Reverse Voltage Fig. 6 Terminal Capacitance vs. Reverse Voltage 100 02 5 -2 5 0 V R =10V Dark current Id (A) Ambient temperature Ta (˚C) 25 50 75 100 10 -12 10 -11 10 -10 10 -9 10 -8 10 -7 10 -6 10 -1 1 10 -10 10 -9 10 -8 10 -7 0.05 0.1 0.2 5 10 20 50 f = 1MHz Reverse voltage VR (V) Terminal capacitance Ct (pF) 0.5 1 2 Ta = 25˚C Shortcircuit current ISC (µ A ) Illuminance Ev (lx) 1 10 100 1 000 10 000 0.01 0.1 100 1 000 Ta=25˚C Wavelengthλ (nm) Relative sensitivity (%) 600 700 800 900 1 000 1 100 1 200 100
0.1 100 GL538 GL537 IOUT = 0.1mA tr tr RL 90% 10% (Ta = 25˚C) Relative output (%) Semiconductor laser Pulse generator Output Input Output Please refer to the chapter "Precautions for Use". (Page 78 to 93) Test Circuit for Response Time PD413PI PD413PI A - 25 100 100 120 140 160 Ambient temperature Ta (˚C) Relative output (%) Test circuit Fix PD and GL at position so that distance between them may be I =100µ A at I =20mA and Ta=25˚C SC PD413PlGL537/ GL538 F Distance between emitter and detector d (mm) Fig. 7 Relative Output vs. Ambient Temperature (Detector : GL537/GL538) 0 2 55 07 5 Fig. 8 Radiation Diagram Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538) 10 -4 10-3 10-2 10-1 IF = 20mA Ta= 25˚C Fig. 10 Response Time vs. Load Resistance 25 25 25 2510 V R = 10V T a= 25˚C Response time tr,tf (µ s) Load resistance RL (Ω ) 10- 2 10- 1 100 101 102 102 103 104 105 100 + 20˚+10˚ + 90˚ + 80˚ + 70˚ + 50˚ + 60˚ + 40˚ + 30˚- 30˚ - 40˚ - 50˚ - 60˚ - 70˚ - 80˚ - 90˚ -10˚- 20˚ Angular displacementθ 0Relative sensitivity (%) l