PD412PI SHARP | Alldatasheet

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Technical content

Features

Applications

Outline Dimensions (Unit : mm) Detector center Rest of gate Transparent epoxy resin

1 Anode

2 Cathode

*Tolerance :± 0.15 * ( ) : Reference dimensions h Dimension at lead root Absolute Maximum Ratings Parameter Symbol Rating Unit Reverse voltage Power dissipation Operating temperature Storage temperature Soldering temperature -2 5t o+ 8 5 - 40 to +100 *1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge PD412PI PD412PI 1. High sensitivity 2. High speed response 1. Optoelectronic switches Soldering area 2-0.45+ 0.2 - 0.1 2-0.4+ 0.2 - 0.1 (TYP. 0.5A/W atλ p= 780nm) 2. MD (mini disk) laser power monitors data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, n n n n

Isc 3.5 4.7 6.3 µ A T - 0.2 - % /˚C Id V R = 10V, Ee= 0 - 0.5 10 nA T V R = 10V, Ee= 0 - 3.5 5.0 C t - 100 350 λ p - 800 - nm K - 0.5 - A/W tr V R = 10V - 250 - nstf - 250 - - ± 45 - E V E V V R = 3V, f= 1MHZ l = 780nm R L =1 kΩ β α pF (Ta=25 ˚C)Electro-optical Characteristics Parameter Symbol Conditions MIN. TYP. MAX. Unit Shortcircuit current Shortcircuit current temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Response time Half intensity angle Rise Time Fall Time times/10˚C Fig. 1 Power Dissipation vs. Ambient Temperature PD412PI Fig. 2 Shortcircuit Current vs. Illuminance *2 EV : Illuminance by CIE standard light source A (tungsten lamp) -2 5 100 150 200 0 25 50 75 100 85 Ambient temperature Ta (˚C) Power dissipation P (mW) = 100 lx = 100 lx Δθ Shortcircuit current ISC (µ A ) Illuminance EV (lx) Ta=25˚C 11 0 100 1000 100000.01 0.1 100 1000 n

(Ta =25˚C ) Fig. 3 Spectral Sensitivity Fig. 4 Dark Current vs. Ambient Temperature Fig. 5 Dark Current vs. Reverse Voltage Fig. 6 Terminal Capacitance vs. Reverse Voltage Fig. 7 Relative Output vs. Ambient Temperature Fig. 8 Radiation Diagram Relative sensitivity (%) Wavelengthλ (nm) Ambient temperature Ta (˚C) Relative output (%) Light source : CIE standard light source A (tungsten lamp) - 25 0 25 50 75 100 100 105 110 115 Reverse voltage VR (V ) Terminal capacitance Ct (pF) f=1MHz Ta=25˚C 0.01 0.1 1 10 100 100 150 200 250 300 Reverse voltage VR (V) Dark current Id (pA ) Ta=25˚C 0.01 0.1 1 10 100 0.1 100 1000 Dark current Id (A ) Ambient temperature Ta (˚C) V R =10V - 25 0 25 50 75 100 -13 -12 -11 -10 Ta=25˚C 400 500 600 700 800 900 1000 1100 12000 100 100 + 90˚ + 80˚ + 70˚ + 50˚ + 60˚ + 40˚ + 30˚-30˚ -40˚ -50˚ -60˚ -70˚ -80˚ -90˚ - 10˚- 20˚ Angular displacementθ +10˚ + 20˚ Relative sensitivity (%)

IOUT = 0.1mA tr RL 90% 10% Semiconductor laser Pulse generator Output Input Output Please refer to the chapter "Precautions for Use". (Page 78 to 93) Test Circuit for Response Time PD412PI PD412PI Fig. 10 Response Time vs. Load Resistance 0.1 100 GL538 10 -4 10 -3 10 -2 10 -1 GL537 IF = 20mA Ta = 25˚C Relative output (%) Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538) Distance between emitter and detector d (m) tf Load resistance RL (Ω ) Response time tr,tf (µ s) V R =10V Ta=25˚C 0.01 0.1 100 1 10 2 10 3 10 4 105 tr,tf l