PD411PI SHARP | Alldatasheet

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Technical content

Features

Applications

Outline Dimensions (Unit : mm) 1. High sensitivity 1. Optoelectronic switches Detector center Rest of gate Transparent epoxy resin

1 Anode

2 Cathode

  • Tolerance :± 0.15 * ( ) : Reference dimensions h Dimension at lead root Absolute Maximum Ratings Parameter Symbol Rating Unit Reverse voltage Power dissipation Operating temperature Storage temperature Soldering temperature -2 5t o+8 5 - 40 to +100 *1 For MAX. 5 seconds at the position of 2.15 mm from the resin edge PD411PI PD411PI (TYP. 1.0A/W atλ p=960 nm) Soldering area 2. High speed response(tr,tf:TYP. 200ns at RL=1 kΩ ) data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, n n n n

Isc µ A T - 0.2 - % /˚C Id V R = 10V, Ee= 0 - 0.5 10 nA T V R = 10V, Ee= 0 - 3.5 5.0 C t - λ p -- n m K - - A/W tr V R = 10V -- nstf -- θ± 45 - E V E V V R = 3V, f= 1MHZ R L =1 kΩ -2 5 100 150 200 50 75 100 85 β α pF (Ta=25 ˚C)Electro-optical Characteristics Parameter Symbol Conditions MIN. TYP. MAX. Unit Shortcircuit current Shortcircuit current temperature coefficient Dark current Dark current temperature coefficient Terminal capacitance Peak sensitivity wavelength Peak spectral sensitivity Response time Half intensity angle Rise Time Fall Time times/10˚C Fig. 1 Power Dissipation vs. Ambient Temperature Power dissipation P (mW) Ambient temperature Ta (˚C) PD411PI l = 960nm 5.0 7.5 9.0 960 1.0 200 200 Fig. 2 Spectral Sensitivity *2 EV : Illuminance by CIE standard light source A (tungsten lamp) = 100 lx = 100 lx Δ 02 5 Relative sensitivity (%) Wavelength (nm) 300 400 500 600 700 800 900 1000 1100 100 Ta=25˚C n

Fig. 7 Relative Output vs. Ambient Temperature (Detector : GL537/GL538) Fig. 4 Dark Current vs. Ambient Temperature Fig. 5 Dark Current vs. Reverse Voltage Fig. 6 Terminal Capacitance vs. Reverse Voltage Dark current Id (A ) PD411PI Reverse voltage VR (V ) Shortcircuit current ISC (µ A ) Illuminance EV (lx) Fig. 3 Shortcircuit Current vs. Illuminance 52 52 52 2 510-2 10-1 T a= 25˚C 11 0 Fig. 8 Radiation Diagram (Ta = 25˚C) Ambient temperature Ta (˚C) Relative output (%) A - 25 100 100 120 140 160 Test circuit Fix PD and GL at position so that distance between them may be I =100µ A at I =20mA and Ta=25˚C. SC ( ) PD411PlGL537/GL538 F 02 5 5 0 7 5 Reverse voltage VR (V ) 0.05 0.1 0.2 0.5 5 10 20 50 f = 1MHz T a= 25˚C Terminal capacitance Ct (pF) 125 10-7 10-8 10-9 10-1 0 10-1 1 Dark current Id (A ) Ambient temperature Ta (˚C) -2 5 0 10-6 10-7 10-8 10-9 V R =10V 25 50 75 10010-1 2 10-1 1 10-1 0 1 10 100 1000 100000.01 0.1 100 1000 Ta=25˚C 100 + 90˚ + 80˚ + 70˚ + 50˚ + 60˚ + 40˚ + 30˚- 30˚ - 40˚ - 50˚ - 60˚ - 70˚ - 80˚ - 90˚ -10˚- 20˚ Angular displacementθ + 20˚+ 10˚ Relative sensitivity (%)

IOUT = 0.1mA tr tf RL 90 % 10 % Load resistance RL (Ω ) Semiconductor laser Pulse generator Output Input Output Please refer to the chapter "Precautions for Use". (Page 78 to 93) Test Circuit for Response Time Fig. 10 Response Time vs. Load Resistance 0.1 100 GL538 GL537 IF = 20mA T a= 25˚C Relative output (%) Response time tr ,tf (ms ) PD411PI PD411PI Fig. 9 Relative Output vs. Distance (Detector : GL537/GL538) Distance between emitter and detector d (mm) 25 25 25 2510 V R = 10V T a= 25˚C 10 -4 10 -3 10 -2 10 -1 10 -2 10 -1 100 101 102 10 2 10 3 10 4 105 l