PD410PI SHARP | Alldatasheet
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- Peak sensitivity wavelength matching 2. Built-in visible light cut-off filter n Applications 1. Infrared remote controllers for TVs, VCRs, audio equipment and air condi- tioners, etc. 2.4 0.4MAX. 0.8 2.15 2.54 0.45 Rest of gate Detector 0.4 0.5 2.0± 0.2 1.5R1.75 8˚ 8˚ n Outline Dimensions (Unit : mm) n Absolute Maximum Ratings (Ta = 25˚C) (Ta = 25˚C)
1 Anode
2 Cathode
2.5 *1 For 5 seconds at the position of 2.15mm from the bottom face of resin package n Electro-optical Characteristics Black epoxy resin ( Visible light cut-off type) Parameter Symbol Rating Unit Reverse voltage V R 32 V Power dissipation P 150 mW Operating temperature T opr - 25 to + 85 ˚C Storage temperature T stg - 40 to + 100 ˚C *1 Soldering temperature T sol 260 ˚C center Parameter Symbol MIN. TYP. MAX. Unit Shortcircuit current I SC 2.5 3.0 4.5 µA Short-circuit current temperature coefficient β T - 0.2 - % /˚C Dark current I d - 0.5 10 nA Dark current temperature coefficient T - 3.5 5.0 times/10˚C Terminal capacitance C t - 20 35 pF Peak sensitivity wavelength λ p 1000 - nm Peak spectral sensitivity K 1 - A/W Half intensity angle Δθ - ± 45 - Response time t r , tf - 200 - ns Conditions V R = 10V, E V =0 V R = 10V, E V =0 V R = 3V, f= 1MHz λ = 1000nm R L =1 kΩ , VR = 10V with infrared LED (λ p= 1 000nm ) data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, α 4.0± 0.2 5.0± 0.2 0.5MIN. 3.75± 0.2 17.15+ 1.5 - 1.0 E V = 100 lx E V = 100 lx
-2 5 100 150 200 0 25 50 75 100 -2 5 0 25 50 75 100 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 600 700 800 900 Relative sensitivity(%) A - 25 0 25 50 75 100 100 120 140 160 Ta = 25˚C Wavelength λ (nm ) 10-6 10-7 10-8 10-9 10-1 0 10-1 1 10-1 2 Dark current Id (A ) Ambient temperature Ta 10 -7 10 -8 10 -9 10 -10 10 -11 Reverse voltage VR (V ) 52 52 52 52 5 Terminal capacitance Ct (pF ) Reverse voltage VR (V ) f = 1MHz T a = 25˚C Relative output (% ) (Test circuit) PD410Pl Ambient temperature Ta (˚C) Fig. 1 Power Dissipation vs. Ambient Temperature Fig. 2 Spectral Sensitivity Fig. 3 Dark Current vs. Ambient Temperature Fig. 4 Dark Current vs. Reverse Voltage Fig. 5 Terminal Capacitance vs. Reverse Voltage Fig. 6 Relative Output vs. Ambient Temperature (Emitter: GL537 / Power dissipation P (mW ) Ambient temperature Ta (˚C) 10-2 10-1 (˚C) Dark current Id (A) GL538 ) Detector:PD410PI) GL537 GL538 Distance between infrared light emitting diode and photodiode shall be fixed when I SC = 100µ A at IF = 20mA and T a= 25˚C. T a= 25˚C 1000 1100 1200 11 0 V R = 10V
Test Circuit for Responce Time Input Output Laser diode Pulse generator Output 10V+ PD410PI 0.1 100 Angular displacement θ 100 25 25 25 2 5 +20˚+10˚0 + 90˚ + 80˚ + 70˚ + 50˚ + 60˚ + 40˚ + 30˚- 30˚ - 40˚ - 50˚ - 60˚ - 70˚ - 80˚ - 90˚ GL538 Fig. 7 Sensitivity Diagram 10-4 10-3 10-2 10-1 GL537 Relative output (% ) IF = 20mA T a = 25˚C 102 101 100 10 -1 10 -2 10 10 2 103 104 105 Responce time tr , tf (µ s) IOUT = 0.1mA tr tr RL Fig. 8 Relative Output vs. Distance (Emitter: Relative radiant intensity (% ) - 10˚- 20˚ V R = 10V Detector:PD410PI) GL538,/GL537 Distance between emitter and detector d (m ) 90% 10% (T a =2 5 ˚ C) T a= 25˚C l Please refer to the chapter “Precautions for Use.” PD410PI Fig. 9 Responce Time vs. Load Resistance Load resistance RL (Ω )