PD322PI SHARP | Alldatasheet

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SHARP ELEK/ MELEC DIV 15¢€ I ; cP ELEK/ o Bf s280298 ooo2ue2 6 pp322P! eS ; T-4)-53 | PD322PI 2-division chio Type Photodiode 7~“! ™@ Features @ Outline Dimensions (Unit : mm) 7 1, 2-division chip type Chip configuration 2. Peak sensitivity wavelength Ap : 980nm adver 2ase: [ro] i 3. Transparent transfer mold package p= location) ; m Applicati yh a EB pplications Fj lp | 3 S| 1. VCR cameras a le fa 2 —, 2. Cameras qt JB g Si ont OMS z, ° Pav a pee Yd 05" vo in} | ants rT f 4 off ie l 1.0.15 =75%}9° @@ Anode ahead @@ Cathode ™ Absolute Maximum Ratings (Ta=25'C) Parameter | Symbol |” Rating | Unit Reverse voltage | ve. [| 30 [Vv Power dissipation [ P | 100 |mw . Oprating temperature °C Storage temperature °C *'Soldering temperature [Tox | 260_—(| °C *3_ For 3 seconds at the position of Imm from the bottom face of resin package ™@ Electro-optical Characteristics (Ta=25'C) Parameter [Symbol | ___ Conditions| MIN. | TYP. [ MAX. | Unit “Short circuit current [te [*Ey= 10x fae 7 | 22 | ea Dark current [ts [ Ve=toy = 20 Pn Terminal capacitance Ve=10V, f=IMHz | — | 5 [15 oF Peak sensitivity wavelength | 4 [930 | 980 | 7,010 | nm Response time [tte] Ve=t0v, R=iKa T= 70 [= Tons %*2 Values for 1 element. Measured with short-circuit between the anode and the cathode of non-measurement elements. *3_ Ey! Iluminance by CIE standard light source A (tungsten lamp) T_T SHARP . 108

SHARP ELEK/ MELEC DIV ‘ PIN Photodiode 1SE D | 8180798 0002683 is | pD322PI Fig. 1 Power Dissipation vs. Ambient Fig. 2 Spectral Sensitivity T~41-53 Temperature - ETT PELTAT A sw wT ACN PEK I aeevennit sg \\ 3 /

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SHARP ELEK/ MELEC DIV 156 of 6180798 Goo2ba4 if PIN Photodiode PD322PI a Fig. 7 Response Time vs. Load Resistance Test Circuit for Response Time Oa S100 T-41-53 EE HHH ord . = oC TT Lae dade fer=0m pa] |_

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& eM 2c oh Sati asec mma ame eon LL CECT 10° 10 10° ot 10° . Load resitance R, (Q) , _ SHARP 110