PD3151F SHARP | Alldatasheet
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T opr ˚C T stg ˚C T sol + 260 ˚C Features Outline Dimensions (Unit : mm)
Applications
- Cameras Reverse voltage Operating temperature Storage temperature Soldering temperature Parameter Symbol Rating Unit Absolute Maximum Ratings -2 5t o+8 5 -4 0t o+8 5 *1 For MAX. 3 seconds in the soldering area PD3151F PD3151F 1. Easy high accuracy positioning owing to location hole Detecting portion pattern positional accuracy : ± 0.1 mm 2. Thin, compact package 3. Visible light cut-off type (Ta=25˚C) * PSD: Position Sensitive Detector Position Sensitive Detector with Location Hole (PSD*) Soldering area 0.8 φ 0.9 R0.4 1.905 5.0 1.905 3.0 6.0 7.0 7.9 1.954.0 1.5 1.95 1.5 Detector face Shape of detector portion 0.15 1.5 0.8 0.97 1.5
1 Anode A
2 Cathode
3 Cathode
4 Anode B
5 Cathode
6 Cathode
1.67 123 1 4 2 3 5 6 Chip positional accuracy :± 0.1 mm, Rotational deviation :± 2 ˚ data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, n n n n
λ = 830nm 90% 10% tr tf Electro-optical Characteristics Parameter Symbol Conditions MIN. TYP. MAX. Unit V R IR =1 0µ A3 0 - - V Id V R =1 V - - n A IL V R = 1V, EV = 1000 lx - µ A C t V R -3 0 p F P -- - tr, tf V R = 1V, RL =1 kΩ -3 0 µ s Rie V R = 1V, Va = 0.5V k Ω -- - ± 2 5 µ m - - R - - 0.5 - A/W Reverse voltage Dark current Collector current Terminal capacitance Peak sensitivity wavelength Response time Resistance between electrodes Error of position detection Sensitivity Forward voltage V F I = 1mAF V1.0 Input Output Input Laser diode (Ta=25 ˚C) Fig. 1 Spectral Sensitivity Fig. 2 Dark Current vs. Ambient Temperature PD3151F Sensitivity wavelength range λ λ - = 1V, f = 10kHz 770 320 400 1.5 1130 480 nm nm RL= 1kΩ V R V R L : Length of light detector surface =1.5mm 940 Ev : Illuminance by CIE standard light source A (tungsten lamp) *2 IL=I 1+I 2 where, I and I are collector current of A1 and A2 respectively.12 *4 75% area from detecting portion center to the edge of detecting portion Definition of error of position detection : Error of position detection of each incident light position is defined by the following formula, if electrical center position is I = I . *3 Test circuit for response time is shown below. Error of position detection (µ m) = x - Incident light position (µm) Dark current d(I A) Ambient temperature Ta (˚C) 0- 2 5 2 55 07 5 1 0 010-1 4 10-1 3 10-1 2 10-1 1 10-1 0 10-9 10-8 10-7 10-6 V R =1V Relative sensitivity (%) Wavelengthλ (nm) 600 700 800 900 1000 1100 1200 100 120 n
Fig. 4 Terminal Capacitance vs. Reverse Voltage Fig. 3 Dark Current vs. Reverse Voltage Fig. 5 Relative Output vs. Ambient Temperature Fig. 6 Collector Current vs. Illuminance PD3151F Ambient temperature Ta (˚C) Reverse voltage VR (V ) R Dark current Id (A ) Relative output (%) Please refer to the chapter "Precautions for Use". (Page 78 to 93) Collector current IL (µ A ) Illuminance EV (lx) 11 00.01 0.1 100 210 310 410 V R =1V Ta=25˚C - 25 0 25 50 75 100 100 105 110 115 Terminal capacitance Ct (pF) Reverse voltage V (V ) 110 f=10kHz Ta=25˚C 0.01 0.1 1 10 10010 -11 10-9 10 -10 10-8 Ta=25˚C l