PD21120R6 TRIQUINT | Alldatasheet

Document overview

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Technical content

  • INTERNALLY MATCHED
  • Typical WCDMA Performance at 28 V - Average Output Power = 20 W atts - Gain = 14 dB - Efficiency = 22% (channel bandwidth 3.84 MHz, adjacent channels ±5 MHz, peak/avg 8.5:1 at 0.01% CCD) Typical CW Performance at 28 V - Output Power at P1-dB = 120 W atts - Gain = 13 dB - Efficiency = 48% Full Gold Metallization Integrated ESD Protection; Class 1 (minimum) Human Body Model Excellent Thermal Stability Broadband Internal Matching Low HCI Drift Capable of Handling 10:1 VSWR @ 28 V ,

120 Watts (CW) Output Power

Description

The PD21120R6 is a 120–watt, internally matched LDMOS FET in- tended for WCDMA applications from 2110 to 2170 MHz. This device typi- cally operates at 48% efficiency (P-1dB) and 14 dB linear gain. Full gold metallization ensures excellent device lifetime and reliability . -60 -55 -50 -45 -40 -35 0 5 10 15 20 25 Output Power (Watts ) ACPR (dBc ) x Gain (dB) & Efficiency (%) Gain Efficiency ACPR VDD = 28 V IDQ = 1.45 A f = 2170 MHz Typi cal Singl e Carrier WCDMA Performance Guaranteed Performance WCDMA Measurements (in test fixture) VDD = 28 V, IDQ = 1.45 A, POUT = 20 W AVG f = 2170 MHz, Single Carrier 3GPP Channel Bandwidth 3.84 MHz, Adj Channels ± 5 MHz, Peak to Avg 8.5:1 Characteristic Symbol Min Typ Max Units Adjacent Channel Power Ratio ACPR — -45 -40 dB Gain Gps 13 14.5 — dB Drain Efficiency ı D 19 22 — % Two-Tone Measurements (in test fixture) VDD = 28 V, IDQ = 1.20 A, POUT = 120 W PEP, f = 2170 MHz, Tone Spacing = 100 kHz Characteristic Symbol Min Typ Max Units Gain Gps 12.5 14 — dB Drain Efficiency ı D 31 36 — % Intermodulation Distortion IMD -27 -30 — dBc All published data at TCASE = 25°C unless otherwise indicated.

120 Watts, 2110-2170 MHz PD21120R6

www.peakdevices.com 720-406-1221 Package 20275

Electrical Characteristics (Guaranteed) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown V oltage VGS = 0 V, IDS = 1 µA/Side V(BR)DSS 65 —— Volts Drain Leakage Current VDS = 28 V, VGS = 0 V/Side IDSS —— 1.0 µA On-State Resistance VGS = 10 V, IDS = 1 A/Side RDS(on) — 0.13 — Ohms Quiescent Current Gate Voltage VDS = 28 V, ID = 700 mA/Side VGS(Q) 2.5 3.4 4 Volts Gate Leakage Current VGS = 10 V, VDS = 0 V/Side IGSS —— 100 nA Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Volts Gate-Source Voltage VGS +15, -0.5 Volts Operating Junction Temperature TJ 200 °C Total Device Dissipation PD 330 Watts Above 25°C derate by 1.88 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (TCASE = 70°C) RıJC 0.55 °C/W Typical Performance IMD vs. Output Power (PEP) -70 -60 -50 -40 -30 1 10 100 1000 Output Power (Watts PEP) IMD (dBc ) x VDD = 28 V, f = 2170 MHz -Tone Spacing = 100 kHz IDQ = 1.2 A IDQ = 1.0 A IDQ = 1.6 A IDQ = 1.4 A Broadba nd Li nearity Performance 2100 2120 2140 2160 2180 2200 Frequency (MHz) -40 -35 -30 -25 -20 -15 -10 IRL & IMD Gain Efficiency IRL IM3 Gain (dB) & Efficiency (%) VDD = 28 V, IDQ = 1.2 A POUT = 120 W PEP www.peakdevices.com 720-406-1221

Power Gain vs. Output Power 1 10 100 1000 Output Power (Watts CW) Power Gain (dB) IDQ = 1.0 A IDQ = 1.2 A IDQ = 1.4 A IDQ = 1.6 A VDD = 28 V -70 -60 -50 -40 -30 -20 0 204 06 0 80 100 120 140 Output Power (Watts -PEP) IMD dBc IMD vs. Output Power Efficiency Efficiency IM3 IM5 IM7 VDD = 28 V IDQ = 1.2 A 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 30 80 130 Case Temperature (°C) Bias Voltage (V) 0.80 3.07 5.33 7.60 9.87 12.13 Voltage normalized to 1.0 V Series show current (A) Gate-Source Voltage vs. Case Temperature Typical Performance (cont.) * This part is internally matched. Measurements of the fin- ished product will not yield these results. 100 120 140 160 180 01 0 20 30 40 Supply Voltage (Volts) Cds & Cgs (pF) x Cdg (pF) x Cds Cdg VGS = 0 V f = 1 MHz Cgs Capacitance vs. Suppl y Voltage (per side) * www.peakdevices.com 720-406-1221

VDD = 28 V, IDQ = 1.2 A, Pout = 20 W Avg 2 Tone 1 MHz Spacing Test Circuit Frequency Z Source ı Z Load ı MHz R jX R jX 2100 5.2 -6.58 2.52 -7.6 2110 5.0 -6.62 2.48 -6.8 2140 4.9 -6.73 2.56 -6.2 2170 4.8 -6.85 2.62 -5.78 2200 4.7 -7.10 2.72 -5.17 Broadband Circuit Impedance Z Source Z Load G D G S D Z0 = 50 ı www.peakdevices.com 720-406-1221

Test Circuit Schematic for 2170 MHz DUT PTF 102003 LDMOS Transistor ı1, ı21 0.02ˇ @ 2170 MHz Microstrip 29.20 ı ı2 0.07ˇˇ@ 2170 MHz Microstrip 50 ı ı3 0.26ˇˇ@ 2170 MHz Microstrip 20.10 ı ı4, ı14 0.50ˇˇ@ 2170 MHz Microstrip 15.50 ı ı5, ı7 0.03ˇˇ@ 2170 MHz Microstrip 13.10 ı ı6, ı8 0.08ˇˇ@ 2170 MHz Microstrip 6.80 ı ı9, ı15 0.04ˇˇ@ 2170 MHz Microstrip 5.50 ı ı10, ı16 0.06ˇˇ@ 2170 MHz Microstrip 13.10ˇı ı11, ı17 0.26ˇˇ@ 2170 MHz Microstrip 53.60ˇı ı12, ı18 0.02ˇˇ@ 2170 MHz Microstrip 10.40ˇı ı13 0.42ˇˇ@ 2170 MHz Microstrip 53.60ˇı ı19 0.27ˇˇ@ 2170 MHz Microstrip 20.10ˇı ı20 0.05ˇˇ@ 2170 MHz Microstrip 50 ı C1, C5, C8, C13 Capacitor, 10 µF, 35 V, Tant TE Series SMD, Digi-Key PCS6106TR C2, C6 Capacitor, 6.8 pF, 100A 6R8 C3, C4 Capacitor, 1.6 pF, ATC 600B 1R6 BW C7, C12 Capacitor, 5.6 pF, 100B 5R6 C9, C14 Capacitor, 0.1 µF, 50 V, Digi-Key PCC103BCT C10, C11 Capacitor, 3.3 pF, ATC 600B 3R3 BW J1, J2 Connector, SMA Female, Panel Mount R1, R4 Resistor, 3.3 K ohms, 1/16W 5% 0603 Digi-Key P3.3K GCT R2, R3 Resistor, 1 K ohms, 1/16W 5% 0603 Digi-Key P1.0K GCT PCB 4003, .020", 1 oz. copper both sides, 1 layer. AlliedSignal Test Circuit (cont.) Assembly Diagram (not to scale) www.peakdevices.com 720-406-1221

Case Outline Specifications Case 20275 Peak Devices, Inc

2100 Central Ave, Suite 200

Boulder, Co 80301 www.peakdevices.com 720-406-1221