PD153 SHARP | Alldatasheet
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a SHARP ELEK/ MELEC DIV 45€ D | 8180798 OO02720 1 I Color Sensor PD153 = 4-1 PD153 10-18 Type Color Sensor T 4 @ Features - M™ Outline Dimensions (Unit : mm) 1. High sensitivity in long wavelength (Short- ear" circuit current ratio) Teco/Iger : MIN. 4.5 at A =900nm VN 2. Output corresponding to the wavelength of 3 g 3. High reliability can package ———) 4. Capable of measuring from blue light to | | | near infrared light (A =1,000nm) . * D ™ Applications | ous 1, Read out of paper currency’s color in i RY) po: money exchanger 5 ® 2. Read out of color temperature and wave- So _ length ox? S@ poe 3. Detection of object’s color IN Keay @ yy) ° . 45" Anode ®Cathode : @Anode @ Absolute Maximum Ratings (Ta=25'C) Parameter | Symbol [Rating [Unit Reverse voltage | ve | 50 | V Operating temperature °C Storage temperature c “Soldering temperature [7 Tss [260 | °C *1 For 10 seconds at the position of 1.3mm from the bottom face of can package. ™ Electro-optical Characteristics (Ta=25'C) Parameter [Symbol [— Conditions | Aped[ MN [ TYP [MAX | Uni Reverse voltage poi, po2z| 50 | — | — |v Dark current | ie [Va=iv | ppa, poz {~~ | 005 [5 | na vermis i Vx=0, f=1MHz | poi { — | 300 | 600 | pr Terminal capacitance = Ve=0, f=IMHz | pp2_ | =| 300 [200 | pF “Short circuit current [tees [*Re=i.mW/er [poz [— | 100 | — | yA w Short cheat cavent rato | es px, roa | oa | 02k | oa | owe —_— pou poz] 45 [510 [aa | = *2 Values for 1 element. Measured with short circuit between the anode and the cathode of non-measurement elements, “*3 Ee: Illuminance by CIE standard light source A (tungsten lamp) *4 Short circuit current ratio (Iscz/Isc1) shall be measured under that both short circuit currents Isc1, Isce are 0.05 ~104A. as SS PAN FS $$ 146
SHARP ELEK/ MELEC DIV LSE 0 | 61407948 0002721 3 I Color Sensor PD153 Ks 8 — 1-4-5) —— ™@ Theory of.Operation Fig. 1 Structure of Semicunductor Color The semiconductor color sensor PD153 is Sensor o an element of two PN-junctions (photodiodes) Insulation film Electrode 2 Electrode 3 y vertically incorporated into a substrate with 4 its thickness of silicon acting as an optical opt filter. @ This means, as shown in Fig. 2, that with the lights of short wavelength absorbed near the Photo- surface of silicon and those of long wavelength ode PD N going deeper to be absorbed, the photodiode Electrode 1 d PD1 of the less deep PN-junction will have (@) Structure (b) Equivalent greater sensitivity to short wavelength lights clreult while the photodiode PD2 of the deeper PN- Fig. 2. Wavelength and Light Absorbtion junction will have greater sensitivity to long Areas ed Infrared i wavelength lights. These characteristics are | shown in Fig. 3. Prayer? 7] 7 | , t According to this spectral sensitivity, as a [ee 7 signal processing method for picking up a pe] signal (color signal) corresponding to its wave- length of light, the short circuit current ratio Fig. 3. Spectral Sensitivity between the two photodiodes above mentioned “Tae=se] | 1 INT is used, 99) From Fig, 3, the relationship: between the of Yep | short circuit current ratio (Isc2/Isc:) and the @ | pet tA AB wavelength of the incident light (A) can be 2 gf let | 7 TN obtained as shown in Fig. 4. As it is obvious in 2 SNe this figure, there is the 1-to-1 correspondence 2°77 TALL between one wavelength and the short circuit £ 0 ToT CN current ratio in indicate that the reading of 4 30] , 1 color of light (wavelength) is possible. op IZ 1 IAT TA Thus, the wavelengths of blue to near infra- a ee red color can be read by PD153. Let fot IN EE] Also taken into account to make the color {000000 700800500 Too TT00 signal reading capability as close to that of Wavelength (nm) human eye as possible is the fact the human Fig, 4 Short Circuit Current Ratio vs. eye is insensitive to wavelength of over 700nm. Wavelength Next, concretely described in Fig. 3 and Fig. SSS 4 will be a case with a monochromatic light 4 _ | striking upon the semiconductor color sensor a a a 7A | and a case with a composite light of various 5 jr ieee striking pon it. igh Fy os ———_———— qa len a monochromatic light of wave- a a A ee a a length (A=500nm) strikes upon it : : a 4 The short circuit current ratio of PD] and ee Se ee — PD2 are obtained from Fig. 3: Q Oe ———— — — | Isca/Isex = 0.035C,/10.595C, =0.059 (C, : ° sod Et conta) oo corresponds to the short circuit current ratio == shown in Fig. 4. "499500600 700 800 900 000 1100 Wavelength (nm) SHARP 147
SHARP ELEK/ MELEC DIV LSE 0 l 8180798 OO002?ee 5 I Color Sensor PD153 Deane ee en nn EN T-41-51 — (2) When a composite light of various Fig. 5 Block Diagram of a Sample Signal ! wavelengths (visible and near infrared) Processing Circuit strikes upon it = Suppose the incident light is made up of 3 ®yktinahoee ‘a light (A) : wavelength 44=500nm, Pon eres po anatase itradiance Exa=5.0mW/ ror Oi —— | eee cm’ Logarithmic and compression 1 "oa light, -{B) : wavelength As=800nm, irradiance Eep=3.0mW/ . cm? Fig. 6 Example of Signal ‘The human eye will recognize this inci- Processing Circuit dent light as of about 500nm wavelength Lag diode 15002 while this semiconductor color sensor will semiconductor re recognize the same light an follows. coor og lop> Re The short circuit current for PD1 and ppottt te etsood Ry [| PDa2, from Fig. 3, is pouigt BBL pans ae Tscr =(6%0.595-+3% 0,350) Co=4.025 roe |p Yo | (Cy z constant) ssrrrssssrsreseeseeeeeseseeeeeed From the equations 1 and 2, the short circuit current ratio can be obtained. Thus, Fig. 7. Output voltage vs. Wavelength Tsco/Ises=0.610 (Typical) So, the wavelength that corresponds to the +e Sera short circuit current ratio of 0.610 according Kanara Tne to Fig. 4, is 4=690nm, which the PD153 +1] Ta=25C ‘Sa ! ‘As made clear by the above examples, with z 14 LA : an incident light made up of a visible light == | IAL together with a near infrared light, the wave- ge length the human eye recognizes is not neces- g IA LLL sarily the same wavelength a semiconductor B 2 7 color sensor recognizes. é vane HM Usage (Sample Signal Processing -3 ei PCC Fig. 5 shows a block diagram of a signal =4l processing circuit for a wavelength detector ‘00500 Wevelnath fa 300 1000 : using a semiconductor color sensor. ” Bach of the short circuit current Isc: and Iscz to the obtained from the two photodiodes is to Fig. 8 Measurement of Color Temperature be logarithmically compressed and go through and Wavelength of Light Source the subtraction circuit to produce a reduced - output voltage of Vo. Therefore, the following fiat se} - sono Ee | equation can be formulated. Vo & log Isco— loglscs = log (scx/Iser) ‘As made clear in the spectral sensitivity : characteristics in Fig. 3, the value Isco/Isc: will ‘ be constant regardless of the intensity of the . incident light, the output voltage will not . SHAR OH WHA 148
SHARP ELEK/ MELEC DIV 15S€ 0 ff siao7q8 cooe7e3 7 Color Sensor PD153 ea . . T-41-51 change as the above formula indicates. Fig. 9 Transmissive Type A example of signal processing circuit and a (Color Measurement of an Object) typical correlation between the output voltage ‘Object to be measured Vo and the wavelength of the incident light are | shown in Fig. 6 and Fig. 7 respectively. an a . ‘The semiconductor color sensor may find its applications in the following examples. @Measurement of color temperature and wavelength of light source-----"-See Fig. 8. Measure or control the color temperature or Fig. 10 Reflective Type the wavelength of the light source, the light (Color Measurement of ‘an Object) from which is made to strike directly upon the semiconductor color sensor. @Color measurement of an object (transmis- = 5 - sive type) tteerssssereeeeeseeeeenenSee Fig, 9. NL ae Measure the color of the object through —— < messed” which the light transmits to strike upon the semiconductor color sensor. @Color measurement of an object (reflective 4 | type) crrrsseseeeessssneneneeseseeeneeeSee Fig, 10. Measure the color of the object which reflects the light to have it strike upon the semiconductor color sensor. -_ OO _ SHARO 149