PC8Q52

PC8D52 SHARP | Alldatasheet

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θθ PC8Q52 Internal connectiondiagram PC8Q52 Anode mark Anode Cathode Emitter Collector θ=0 to 13˚ 6.5±0.5 0.9±0.2 1.2±0.3 19.82±0.5 7.62±0.3 0.26±0.1 3.0±0.50.5±0.1 3.5±0.53.3±0.5 0.5TYP. 2.54±0.25 16 15 14 13 12 11 10 9 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 1 2 3 4 5 6 7 8 1 3 5 7 2 4 6 8 9 11 13 15 10 12 14 16 ❈ (Note) : The diode of output side is not a protection diode of reverse voltage. PC8D52/PC8Q52 PC8D52/PC8Q52 1. Telephones 2. Facsimiles 3. Modems 4. Set-top Boxes ■ Features ■ Applications High Collector-emitter Voltage Type Photocouplers 1. High collector-emitter voltage VCEO:350V 2. High current transfer ratio (CTR:MIN. 1 000% at IF=1mA, VCE=2V) 3. High isolation voltage between input and output (Viso (rms):5kV) 4. Compact dual-in-line package PC8D52 (2-channel type) PC8Q52 (4-channel type) 5. Recognized by UL (NO. E64380) Notice In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occ ur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. Internet Internet address for Electronic Components Group http://sharp-world.com/ecg/ ■ Outline Dimensions (Unit : mm) PC8D52 Internal connection diagram PC8D52 Anode Cathode Emitter Collector Anode mark 6.5±0.5 2.54±0.25 0.9±0.21.2±0.3 9.66±0.5 3.5±0.53.3±0.5 0.5TYP. 0.5±0.1 3.0±0.5 θθ θ=0 to 13˚ 7.62±0.3 0.26±0.1 8 7 6 5 1 2 3 4 1 3 2 4 5 7 6 8 2 3 4 7 6 5 ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Unit Input Forward current mA *1 Peak forward current A Power dissipation mW Output Collector-emitter voltage V Emitter-collector voltage V Collector current mA Collector power dissipation mW Total power dissipation mW *2 Isolation voltage Operating temperature ˚C Storage temperature ˚C *3 Soldering temperature IF IFM P VCEO VECO IC PC Ptot Viso (rms) Topr Tstg Tsol ˚C *1 Pulse width≤100µs, Duty ratio:0.001 *2 40 to 60%RH, AC for 1 minute *3 For 10s Rating Reverse voltage V VR 6 350 0.1 150 150 200 −30 to +100 −55 to +125 260 5k V

■ Electro-optical Characteristics Parameter Conditions Forward voltage Reverse current Terminal capacitance Collector dark current Transfer charac- teristics Collector current Collector-emitter saturation voltage Isolation resistance Floating capacitance Cut-off frequency MIN. 5×10 TYP. 1.2 1011 0.6 100 MAX. 1.4 250 200 150 1.2 1.0 300 100 Unit V µA pF nA mA V Ω pF kHz µs µs Symbol VF IR Ct ICEO IC VCE (sat) RISO fc tr tf Cf Response time Rise time Fall time Input Output IF=10mA VR=4V V=0, f=1kHz VCE=200V, IF=0 Collector-emitter breakdown voltage 350 −− VBVCEO IC=0.1mA, IF=0 IF=1mA, VCE=2V IF=20mA, IC=100mA V=0, f=1MHz VCE=2V, IC=20mA, RL=100Ω VCE=2V, IC=20mA, RL=100Ω, −3dB DC500V, 40 to 60%RH (Ta=25˚C) 0 125 100 200 150 25 50 75 100−30 Collector power dissipation PC (mW) Ambient temperature Ta (˚C) Fig.2 Collector Power Dissipation vs. Ambient Temperature −30 0 25 50 75 100 125 Ambient temperature T a (˚C) Forward current IF (mA) Fig.1 Forward Current vs. Ambient Temperature Duty ratio Pulse width≤100µs Ta=25˚C 100 200 500 210−3 10−252 1 0 −152 5 Peak forward current IFM (mA) 10 000 5 000 2 000 1 000 Fig.3 Peak Forward Current vs. Duty Ratio 100 200 500 Forward voltage VF (V) Forward current IF (mA) 50˚C 25˚C 0˚C −25˚C Ta=75˚C Fig.4 Forward Current vs. Forward Voltage

0.1 Current transfer ratio CTR (%) 0.2 0.5 10 12 5 Forward current IF (mA) VCE=2V Ta=25˚C 5 000 4 000 3 000 2 000 1 000 Fig.5 Current Transfer Ratio vs. Forward Current 100 200 12345 0.5mA 1mA 1.5mA 2mA 2.5mA 3mA 5mA Collector current IC (mA) Collector-emitter voltage VCE (V) PC (MAX.) Ta=25˚C IF =10mA Fig.6 Collector Current vs. Collector-emitter Voltage 100 150 0 2 04 06 08 0 1 0 0 Relative current transfer ratio (%) Ambient Temperature Ta (˚C) IF=1mA VCE=2V −30 −30 0.2 0 2 04 06 08 0 1 0 0 0.4 0.6 0.8 1.0 1.2 Ambient temperature T a (˚C) Collector-emitter saturation voltage VCE (sat) (V) IF=20mA IC=100mA Fig.7 Relative Current Transfer Ratio vs. Ambient Temperature Fig.8 Collector - emitter Saturation Voltage vs. Ambient Temperature 200 40 60 80 100 10−10 10−9 10−8 10−7 10−6 10−5 Collector dark current ICEO (A) Ambient temperature Ta (˚C) VCE=200V −30 10−11 Fig.9 Collector Dark Current vs. Ambient Temperature Response time (µs) 100 200 500 0.01 0.1 1 10 VCE=2V IC=20mA Ta=25˚C tr tf td ts 1 000 Load resistance RL (kΩ) Fig.10 Response Time vs. Load Resistance

Frequency f (kHz) 0.1 1 10 100 100Ω 10Ω Voltage gain Av (dB) VCE=2V IC=20mA Ta=25˚C RL=1kΩ 1 000 −25 −20 −15 −10 Fig.11 Frequency Response Collector-emitter saturation voltage VCE (sat) (V) Forward current IF (mA) 12345 10mA 30mA 50mA 70mA 100mA Ta=25˚CIC=5mA Fig.12 Collector-emitter Saturation Voltage vs. Forward Current

SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE. Suggested applications (if any) are for standard use; See Important Restrictions for limitations on special applications. See Limited Warranty for SHARP’s product warranty. The Limited Warranty is in lieu, and exclusive of, all other warranties, express or implied. ALL EXPRESS AND IMPLIED WARRANTIES, INCLUDING THE WARRANTIES OF MERCHANTABILITY, FITNESS FOR USE AND FITNESS FOR A PARTICULAR PURPOSE, ARE SPECIFICALLY EXCLUDED. In no event will SHARP be liable, or in any way responsible, for any incidental or consequential economic or property damage. NORTH AMERICA EUROPE JAPAN SHARP Microelectronics of the Americas 5700 NW Pacific Rim Blvd. Camas, WA 98607, U.S.A. Phone: (1) 360-834-2500 Fax: (1) 360-834-8903 Fast Info: (1) 800-833-9437 www.sharpsma.com SHARP Microelectronics Europe Division of Sharp Electronics (Europe) GmbH Sonninstrasse 3

20097 Hamburg, Germany

Phone: (49) 40-2376-2286 Fax: (49) 40-2376-2232 www.sharpsme.com SHARP Corporation Electronic Components & Devices 22-22 Nagaike-cho, Abeno-Ku Osaka 545-8522, Japan Phone: (81) 6-6621-1221 Fax: (81) 6117-725300/6117-725301 www.sharp-world.com TAIWAN SINGAPORE KOREA SHARP Electronic Components (Taiwan) Corporation 8F-A, No. 16, Sec. 4, Nanking E. Rd. Taipei, Taiwan, Republic of China Phone: (886) 2-2577-7341 Fax: (886) 2-2577-7326/2-2577-7328 SHARP Electronics (Singapore) PTE., Ltd. 438A, Alexandra Road, #05-01/02 Alexandra Technopark, Singapore 119967 Phone: (65) 271-3566 Fax: (65) 271-3855 SHARP Electronic Components (Korea) Corporation RM 501 Geosung B/D, 541 Dohwa-dong, Mapo-ku Seoul 121-701, Korea Phone: (82) 2-711-5813 ~ 8 Fax: (82) 2-711-5819 CHINA HONG KONG SHARP Microelectronics of China (Shanghai) Co., Ltd.

28 Xin Jin Qiao Road King Tower 16F

Pudong Shanghai, 201206 P.R. China Phone: (86) 21-5854-7710/21-5834-6056 Fax: (86) 21-5854-4340/21-5834-6057 Head Office: No. 360, Bashen Road, Xin Development Bldg. 22 Waigaoqiao Free Trade Zone Shanghai 200131 P.R. China Email: smc@china.global.sharp.co.jp SHARP-ROXY (Hong Kong) Ltd. 3rd Business Division, 17/F, Admiralty Centre, Tower 1

18 Harcourt Road, Hong Kong

Phone: (852) 28229311 Fax: (852) 28660779 www.sharp.com.hk Shenzhen Representative Office: Room 13B1, Tower C, Electronics Science & Technology Building Shen Nan Zhong Road Shenzhen, P.R. China Phone: (86) 755-3273731 Fax: (86) 755-3273735