PC812 SHARP | Alldatasheet
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- High noise reduction 2. High current transfer ratio 3. High isolation voltage between input and 4. Compact dual-in-line package n Applications 1. Motor-control circuits 2. Computer terminals 3. System appliances, measuring instruments 4. Signal transmission between circuits of different potentials and impedances *3 For 10 seconds ( Unit : mm) (Common mode rejection voltage VCM (CTR : MIN. 90% at IF = 5mA, V CE =5 V) output (V iso n Absolute Maximum Ratings Parameter Symbol Rating Unit Input Forward current I F 50 mA *1Peak forward current I FM 1A Reverse voltage V R 6V Power dissipation P 70 mW Output Collector-emitter voltage V CEO 35 V Emitter-collector voltage V ECO 6V Collector current I C 50 mA Collector power dissipation P C 150 mW Total power dissipation *2Isolation voltage Operating temperature Storage temperature *3Soldering temperature P tot 200 mW V iso T opr - 30 to + 100 ˚C T stg - 55 to + 125 ˚C T sol 260 ˚C *1 Pulse width <=100µ s, Duty ratio : 0.001 data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, RL = 470Ω , Vnp = 100mV ) θθ Anode mark CTR rank mark PC812 Internal connection diagram 1 2 34 43 0.5TYP.
1 Anode
2 Cathode
3 Emitter
4 Collector
(T a= 25˚C) High Noise Resistance Type n Outline Dimensions 4.58± 0.5 5 000 *2 40 to 60% RH, AC for 1 minute : TYP. 1.5kV at dV /dt= 2kV/µ s, : 5 000Vrms ) V rms 7.62± 0.3 θ = 0 to 13˚ 6.5± 0.5 2.54± 0.25 0.9± 0.2 0.5± 0.1 0.26± 0.1
Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Forward voltage V F - 1.2 1.4 V Peak forward voltage V FM - - 3.0 V Reverse current I R -- 1 0 µ A Terminal capacitance C t -3 0 p F Output Collector dark current I CEO -- 1 0 -7 A Transfer charac- teristics C T R 90 - 480 % Collector-emitter saturation voltage VCE (sat) - 0.1 0.2 V Isolation resistance R ISO 5x1 010 1011 - Ω Floating capacitance C f - 0.6 1.0 pF Cut-off frequency f c 15 80 - kHz tr -4 1 8 µ s tf -5 2 0 µ s V CM - 1.5 - k V *4 Classification table of current transfer ratio is shown below. *5 Test Circuit for VCM VCM RL Vnp VCC = 9V VCM : Common mode rejection Test condition Vnp = 100mV, RL = 470 Ω n Electro-optical Characteristics (Ta= 25˚C ) Model No. Rank mark CTR (% ) tr t TYP. MAX. TYP. MAX. PC812A A 90 to 180 31 441 6 PC812B B 150 to 180 41 651 8 PC812C C 240 to 480 51 872 0 PC812 A, B or C 90 to 480 41 852 0 Measurement conditions V CE =2 V IC = 2mA R L = 100Ω IF = 20mA IFM = 0.5A V R =4 V V = 0, f = 1kHz V CE = 20V, IF =0 IF = 5mA, V CE =5 V IF = 20mA, I C = 1mA V = 0, f = 1MHz V CE = 2V, IC = 2mA, R L = 100Ω L = 470 Ω , Vnp = 100mV, IF =0 voltage (higher value of pulse wave) *4 Current transfer ratio *5 Common mode rejection voltage V CE = 5V, IC = 2mA, R L = 100 Ω , - 3dB Rise time Fall time *4 Response time -3 0 0 25 50 75 100 125 Fig. 1 Forward Current vs. Ambient Temperature Ambient temperature T a (˚C) 0 125 100 200 150 25 50 75 100 Ambient Temperature -3 0 Forward current IF (mA ) Collector power dissipation PC (mW ) I = 5mA T a = 25˚C T a = 25˚C Ambient temperature T a (˚C) (µ s) (µ s)f V CE =5 V DC500V, 40 to 60% RH 200 dV /dt = 2kV/µ s, R dV /dt: Rising factor of voltage Fig. 2 Collector Power Dissipation vs. dV /dt= 2kV/µ s, IF = 0
Fig. 6 Collector Current vs. Collector-emitter Voltage Duty ratio 10 000 100 200 500 1 000 2 000 5 000 2 5 2 5 2 5 Fig. 3 Peak Forward Current vs. Duty Ratio Current transfer ratio CTR (% ) 500 2 5 10 20 50 400 300 200 100 Forward current I F (mA ) 100 150 02 5 5 07 5 Relative current transfer ratio (% ) Fig. 7 Relative Current Transfer Ratio vs. Ambient Temperature Peak forward current IFM (mA ) Fig. 5 Current Transfer Ratio vs. Forward Current Collector-emitter voltage VCE (V ) Fig. 8 Collector-emitter Saturation Voltage vs. Ambient Temperature Ambient temperature Ta (˚C) 100 200 500 Forward voltage VF (V ) F (mA ) Fig. 4 Forward Current vs. Forward Voltage Pulse width <=100µs Forward current I -3 0 -3 0 0.02 0 2 04 06 08 0 1 0 0 0.04 0.06 0.08 0.10 0.12 0.14 0.16 Collector emitter saturation voltage VCE (sat) (V ) Ambient temperature Ta (˚C) 100 125 50˚C 25˚C 0˚C - 25˚C T a = 75˚C Collector current IC (mA ) 110 -3 10 -2 10 -1 T a= 25˚C IF = 30mA T a = 25˚C P C (MAX. ) V CE =5 V T a = 25˚C IF = 5mA V CE =5 V IF = 20mA IC = 1mA
Fig. 9 Collector Dark Current vs. Ambient Temperature Fig.11 Frequency Response Frequency f (kHz ) 0.5 1 2 5 200 100502010 500 100 Ω 1k Ω Collector dark current ICEO (A ) Ambient temperature Ta (˚C) Voltage gain Av (dB ) L (k Ω ) Response time (µ s) 0.2 0.1 0.5 0.01 0.1 1 10 50 100 200 500 2468 1 0 1mA 3mA 97531 5mA 7mA Collector-emitter saturation voltage VCE (sat) (V ) Forward current IF (mA ) Test Circuit for Response Time VCC ttr ts 90% 10% td Output Input RLInput OutputRD VCC RL Output RD Test Circuit for Frepuency Response Please refer to the chapter Fig.12 Collector-emitter Saturation Voltage vs. Forward Current -3 0 -1 0 -1 5 -2 0 f V CE = 20V 120 140 10 -7 10 -6 10 -8 10 -9 10 -1 0 10 -1 1 10 -1 2 V CE =2 V IC = 2mA T a = 25˚C tf tr td ts R L = 10kΩ V CE =5 V IC = 2mA T a = 25˚C T a= 25˚CIC = 0.5mA “ Precautions for Use ” Fig.10 Response Time vs. Load Resistance Load resistance R l