PC810 SHARP | Alldatasheet
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*3 For 10 seconds n Features n Applications (toff : MAX. 1ms at IF = 1mA, V CC = 5V, RL = 110kΩ ) 2. High current transfer ratio under low input current (CTR : MIN. 60% at I F = 1mA, V CE = 0.4V) 3. High isolation voltage between input and output iso 4. Compact dual-in-line package 1. Solid state relays 2. Motor-control equipment 3. Signal transmission between circuits of different potentials and impedances (Unit : mm) n Absolute Maximum Ratings Parameter Symbol Rating Unit Input Forward current I F 50 mA *1Peak forward current I FM 1A Reverse voltage V R 6V Power dissipation P 70 mW Output Collector-emitter voltage V CEO 35 V Emitter-collector voltage V ECO 6V Collector current I C 50 mA Collector power dissipation P C 150 mW Total power dissipation P tot 200 mW *2Isolation voltage V iso Operating temperature T opr - 30 to + 100 ˚C Storage temperature T stg - 55 to + 125 ˚C *3Soldering temperature T sol 260 ˚C *1 Pulse width<=100µ s, Duty ratio : 0.001 data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, θθ Anode mark 0.26 PC810 Internal connection diagram CTR rank mark
1 Anode
2 Cathode
3 Emitter
4 Collector
- Recognized by UL, file No. E64380 High Speed Under High Load Resistance Photocoupler n Outline Dimensions (T a = 25˚C) 5 000 *2 40 to 60% RH, AC for 1 minute h Lead forming type (I type) and taping reel type (P type) are also available. (PC810I/PC810P ) load 1. High speed response under high resistance : 5 000Vrms ) V rms θ = 0 to 13˚ 6.5± 0.5 2.54± 0.25 0.9± 0.2 0.5TYP. 0.5 4.58 ± 0.1 2.7± 0.5 7.62± 0.3
Fig. 1 Forward Current vs. Fig. 3 Paek Foward Current vs. Duty Ratio n Electro-optical Characteristics (Ta= 25˚C ) *5 Classification table of current transfer ratio and response time is shown below Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Forward voltage V F IF = 20mA - 1.2 1.4 V Peak forward voltage V FM IFM = 0.5A - - 3.0 V Reverse current I R V R =4 V - - 1 0 µ A Terminal capacitance C t V = 0, f = 1kHz - 30 pF Output Collector dark current I CEO V CE = 20V, IF =0 - - 1 0 -7 A Transfer charac- teristics *5Current transfer ratio CTR I F = 1mA, V CE = 0.4V 60 - 200 % Collector-emitter saturation voltageV CE (sat) IF = 20mA, IC = 1mA - 0.1 0.2 V Isolation resistance R ISO 5x1 010 1011 - Ω Floating capacitance C f V = 0, f = 1MHz - 0.6 1.0 pF Cut-off frequency f c V CE = 5V, IC = 2mA, R L =1 kΩ , - 3dB 6 60 - kHz tr V CE = 2V, IC = 2mA, R L =1 kΩ -1 0 5 0 µ s tf -1 0 5 0 µ s *5Turn-off time t off V CC = 5V, IF = 1mA, R L = 110kΩ - 0.5 1.0 ms Rise time Fall time *5 Response time -3 0 0 25 50 75 100 125 Ambient temperature T a (˚C) Duty ratio Pulse width <=100µ s 100 200 500 2 5 2 5 2 5 Peak forward current IFM (mA ) 0 125 100 200 150 25 50 75 100 Ambient Temperature -3 0 Forward current IF (mA ) Collector power dissipation PC (mW ) T a = 25˚C Ambient temperature Ta (˚C) Ambient Temperature Fig. 2 Collector Power Dissipation vs. Rank mark tr (µ s) tf (µ s) toff (µ s) PC810A A 60 to 120 4 15 3 15 350 500 PC810B B 100 to 200 10 50 10 50 500 PC810 A or B, or no marking 60 to 200 - 50 - 50 - Measurement conditions IF = 1mA V CE = 0.4V T a = 25˚C V CE =2 V IC = 2mA T a = 25˚C IF = 1mA V CC =5 V T a = 25˚C Model No. R L =1 kΩ DC500V, 40 to 60% RH R L = 110kΩ 1 000 1 000 10 000 5 000 2 000 1 000 CTR (% ) 250 10 -3 10 -2 10 -1
0.5mA Fig. 6 Collector Current vs. Collector-emitter Voltage 100 150 0 20 40 60 80 100 Relative current transfer ratio (% ) Ambient Temperature 0.02 - 30 0 20 40 60 80 100 0.04 0.06 0.08 0.10 0.12 0.14 0.16 -3 0 200 40 60 80 100 Fig. 9 Collector Dark Current vs. Ambient Temperature Collector current IC (mA ) Collector-emitter voltage VCE (V ) Fig. 7 Relative Current Transfer Ratio vs. Ambient temperature T a (˚C) Fig. 8 Collector-emitter Saturation Voltage vs. Ambient TemperatureCE (sat) (V ) Collector dark current ICEO (A ) Ambient temperature T a (˚C)Ambient temperature T a (˚C) 100 200 500 Forward Voltage Forward voltage V F (V ) Fig. 4 Forward Current vs. 0.1 0.50.2 12 5 240 220 200 180 160 20 50 100 120 140 0.4V Fig. 5 Current Transfer Ratio vs. Forward Current Forward current IF (mA ) Forward current IF (mA ) -3 0 PC810 Collector-emitter saturation voltage V 50˚C 25˚C 0˚C - 25˚C T a = 75˚C T a = 25˚C IF = 3mA 10 -1 3 10 -1 2 10 -1 1 10 -1 0 10 -9 10 -8 10 -7 10 -6 T a = 25˚C V CE =5 V IF = 1mA V CE = 0.4V IF = 20mA IC = 1mA V CE = 20V Current transfer ratio CTR (% )
Fig.13 Frequency Response Frequency f (kHz ) -2 0 0.5 1 2 5 -1 0 200100502010 500 -1 5 100 Ω 1k Ω Voltage gain Av (dB ) Response time (µ s) 0.5 20 100 200 1 00050 500 400 800 Turn-off time toff(µ s) -3 0 800 700 600 500 400 300 200 100 0 2 04 06 08 0 Fig.12 Turn-off Time vs. Ambient Temperature 2468 1 0 1.0mA 2.0mA 3.0mA 12 14 16 18 20 5.0mA 7.0mA Collector-emitter saturation voltage VCE (sat) (V ) Forward current IF (mA ) Fig.14 Collector-emitter Saturation Voltage vs. Forward Current Test Circuit for Response Time VCC ttr ts 90% 10% td Output Input RLInput OutputRD VCC RL Output RD Test Circuit for Frepuency Response Turn-off time toff (µ s) Vcc = 5V T a = 25˚C V CC =5 V R L = 110kΩ IF = 1mA f V CE =2 V IC = 2mA T a = 25˚C tf tr td ts IF = 1mA V CE =5 V IC = 2mA T a = 25˚C 100 120 Ambient temperature Ta (˚C) R L = 10kΩ IC = 0.5mA T a = 25˚C 2 400 2 000 1 600 1 200 Please refer to the chapter “Precautions for Use ” Fig.10 Response Time vs. Load Resistance Fig.11 Turn-off Time vs. Load Resistance Load resistance RL (k Ω )Load resistance RL (k Ω ) l