PC733 SHARP | Alldatasheet
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AC Input Type Photocoupler n Features 1. AC input response 2. High isolation voltage between input and 3. Current transfer ratio 4. Low collector dark current 5. TTL compatible output n Applications 1. Telephone sets 2. Programmable controllers 3. System appliances, measuring instruments 4. Signal transmission between circuits of *1 Pulse width<=100µs, Duty ratio : 0.001 *3 For 10 seconds PC733 θ diagram Internal connection θ output (V iso CTR : MIN. 15% at IF = ± 1mA, VCE =5 V (ICEO : MAX. 10 -7A at VCE = 20V) different potentials and impedances n Outline Dimensions (Unit : mm) n Absolute Maximum Ratings (Ta= 25˚C ) Parameter Symbol Rating Unit Input Forward current I F mA *1 Pead forward current I FM A Power dissipation P 70 mW Output Collector-emitter voltage V CEO 35 V Emitter-collector voltage V ECO 6V Collector-base voltage V CBO 35 V Emitter-base voltage V EBO 6V Collector current I C 50 mA Collector power dissipation P C 150 mW Total power dissipation *2 Isolation voltage Operating temperature Storage temperature *3 Soldering temperature Ptot 170 mW V iso Vrms Topr - 25 to + 100 ˚C Tstg - 40 to + 125 ˚C Tsol 260 ˚C h Lead forming type (I type) is also available. (PC733I data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, 12 3 456 654 321 0.5TYP.
1 Anode, cathode
2 Anode, cathode
4 Emitter
5 Collector
6 Base
- Recognized by UL, file No. E64380 Primary side mark (Sunken place) 3.7± 0.5 5 000 *2 40 to 60% RH, AC for 1 minute : 5 000Vrms ) ±5 0 θ = 0 to 13˚ 6.5± 0.5 1.2± 0.3 9.22± 0.5 3.5± 0.5 0.5± 0.1 2.54± 0.25 0.26± 0.1 7.62± 0.3
n Electro-optical Characteristics (Ta= 25˚C ) -2 5 0 25 50 75 100 125 Fig. 1 Forward Current vs. Ambient Temperature Ambient temperature Ta (˚C) - 25 125 25 750 50 100 100 120 Fig. 2 Diode Power Dissipation vs. Ambient TemperatureDiode power dissipation P (mW ) Ambient temperature Ta (˚C) 200 150 100 170 0 25 50 75 100 125 Fig. 4 Power Dissipation vs. Ambient TemperaturePower dissipation Ptot (mW ) Ambient temperature Ta (˚C) 0 125 100 200 150 25 50 75 100 Ambient Temperature -2 5 Fig. 3 Collector Power Dissipation VS.Forward current IF (mA )Collector power dissipation PC (mW ) -2 5 Ambient temperature Ta (˚C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Forward voltage V F IF = ± 20mA - 1.2 1.4 V Peak forward voltage V FM IFM = ± 0.5A - - 3.0 V Terminal capacitance C t V = 0, f = 1kHz - 50 400 pF Output Collector dark current I CEO V CE = 20V, IF =0 - - 1 0 -7 A Transfer charac- teristics Current transfer ratio CTR I F = ± 1mA, V CE = 5V 15 - 300 % Collector-emitter saturation voltage V CE (sat) IF = ± 20mA, IC = 1mA - 0.1 0.2 V Isolation resistance R ISO DC500V, 40 to 60% RH 5 x 10 10 1011 - Ω Floating capacitance C f V = 0, f = 1MHz - 0.6 1.0 pF Cut-off frequency f C V CE = 5V, IC = 2mA, R L = 100Ω , - 3dB 15 80 - kHz Response time Rise time tr V CE R L = 2V, IC = 2mA = 100Ω -4 1 8 µ s Fall time tf -3 1 8 µ s
210 -3 10 -25 2 10 -15 2 5 0.1 0.50.2 1 2 5 10 20 50 80 Current transfer ratio CTR (% ) Forward current IF (mA ) Ambient Temperature - 25 0 25 50 75 100 100 125 150 123456789 1 0 40mA 30mA 20mA 10mA 5mA Fig. 8 Collector Current vs. Collector-emitter VoltageCollector current IC (mA ) Collector-emitter voltage VCE (V ) Fig. 5 Peak Forward Current vs. Duty Ratio Fig. 7 Current Transfer Ratio vs. Forward Current Fig. 9 Relative Current Transfer Ratio vs. Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature Ambient temperature T(˚C) CE (sat) (mV ) 100 200 500 Forward Voltage Forward voltage VF (V ) Fig. 6 Forward Current vs. Pulse width<=100µ s Forward current IF (mA ) 100 T a= 25˚C a (mA ) Collector-emitter saturation voltage V 50˚C 25˚C 0˚C - 25˚C T a= 75˚C 100 150 -25 0 25 50 75 100 Ambient temperature Ta (˚C) Relative current transfer ratio (% ) T a = 25˚C R BE = V CE =5 V T a = 25˚C R BE =P C ( MAX.)IF = 50mA R BE = IC = 1mA IF = 20mA 10 000 5 000 2 000 1 000 IF = 1mA V CE =5 V R BE =
-2 5 250 50 75 10 -1 0 100 10 -9 10 -8 10 -7 10 -6 10 -5 10 -1 1 Collector dark current ICEO (A ) 10 -9 10 -8 10 -1 0 10 -1 1 250 50 75 100 125 Frequency f (kHz ) -1 0 12 5 1 0 -2 0 50020010050200.5 Ambient temperature Ta (˚C) Collector dark current I(A ) Ambient temperature Ta (˚C) Fig.13 Frequency Response Voltage gain Av (dB ) 0.2 0.1 0.5 Response time (µ s) 0.1 1 10 100 200 500 Forward current IF (mA ) 2468 1 0 2mA 3mA 5mA 12 14 16 7mA 10mA Forward Current Collector-emitter saturation voltage VCE ( sat) (V ) Fig.14 Collector-emitter Saturation Voltage vs. Test Circuit for Response Time 90% 10% Output Input RLInput Output VCC RD td ts tr t Test Circuit for Frequency Response VCC RL Output RD Fig.11-a Collector Dark Current vs. Ambient Temperature Ambient Temperature CBO 1k Ω 100 Ω f l Please refer to the chapter “Precautions for Use ” R BE = V CE = 20V V CB = 30V R BE = T a = 25˚C R BE = IC = 2mA V CE =2 V ts td tf tr IC = 1mA T a = 25˚C R BE = Fig.11-b Collector-base Dark Current vs. R L = 10k Ω V CE =5 V IC = 2mA R BE = T a = 25˚C Fig.12 Response Time vs. Load Resistance Load resistance RL (k Ω )