PC703V SHARP | Alldatasheet
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- High isolation voltage between input and 3. TTL compatible output 1. Telephone sets, telephone exchangers different potentials and impedances *1 Pulse width<=100µ s, Duty ratio : 0.001 *3 For 10 seconds Parameter Symbol Rating Unit Input IF 50 *1 IFM 1A Reverse voltage V R 6V Power dissipation P 70 mW Collector-emitter voltage V CEO 70 V Output Emitter-collector voltage V ECO 6V Collector-base voltage V CBO 70 V Emitter-base voltage V EBO 6V Collector current I C 50 Collector power dissipation P C 160 mW Total power dissipation P tot 200 mW *2Isolation voltage V iso Operating temperature T opr - 30 to + 100 ˚C Storage temperature T stg - 55 to + 125 ˚C *3Soldering temperature T sol 260 ˚C (Ta= 25˚C ) θ θ Anode mark PC703V 123 5 46 CTR Rank mark Internal connection diagram 12 3 465 0.5 (V iso 2. System appliances, measuring instruments 1. High collector-emitter voltage (V CEO : 70V) 4. Recognized by UL, file data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
1 Anode
2 Cathode
3 N C
0.5TYP. High Collector-emitter Voltage Type Photocoupler No. E64380, output 3. Signal transmission between circuits of n Absolute Maximum Ratings Forward current Peak forward current mA mA (Unit : mm) hh TUV (VDE0884 ) approved type is also available as an option. *2 40 to 60% RH, AC for 1 minute 5 000 h Lead forming type (I type) and taping reel type (P type) are also available. (PC703VI/PC703VP ) : 5 000Vrms ) V rms 3.5± 0.53.7± 0.5 2.54± 0.25 ± 0.1 3.35± 0.5 0.26± 0.1 0.9± 0.2 1.2± 0.3 6.5± 0.5 θ = 0 to 13˚
n Electro-optical Characteristics *4 Classification table of current transfer ratio is shown below. Model No. Rank mark 40 to 80 63 to 125 100 to 200 160 to 320 A or B 40 to 125 B or C 63 to 200 C or D 100 to 320 A, B, C or D 40 to 320 PC703V A B C D (Ta= 25˚C ) Symbol Conditions MIN. TYP. MAX. Unit Forward voltage V F IF - 1.2 1.4 V Peak forward voltage V FM IFM = 0.5A - - 3.0 V Reverse current I R V R =4 V - - 1 0 µ A Terminal capacitance C t V = 0, f = 1kHz - 30 250 pF Collector dark current I CEO V CE = 20V, IF =0 - - 1 0 -7 A CTR I F 40 - 320 % Collector-emitter saturation voltage V CE (sat) IF - 0.1 0.2 V Isolation resistance R ISO 5x1 010 1011 - Ω Floating capacitance C f V = 0, f = 1MHz - 0.6 1.0 pF fC - 80 - kHz tr V CE C R L = 100Ω , -4 1 5 µ s tf -3 1 5 µ s Parameter Input Output Transfer charac- teristics Cut-off frequency Response time Rise time Fall time Measurement conditions IF = 10mA VCE =5 V Ta = 25˚C -3 0 0 25 50 75 100 125 Fig. 1 Forward Current vs. Ambient Temperature Ambient temperature Ta (˚C) 0 125 100 200 150 25 50 75 100 Fig.12 Collector Power Dissipation VS. Ambient Temperature 160 -3 0 Forward current IF (mA ) Collector power dissipation PC (mW ) *4Current transfer ratio = 20mA = 10mA, V CE =5 V = 20mA, IC = 1mA = 2mA PC703V1 PC703V2 PC703V3 PC703V4 PC703V5 PC703V6 PC703V7 PC703V Ambient temperature Ta (˚C) V CE = 2V, IC R L = 100Ω = 2mA - 3dB = 5V, I DC500V, 40 to 60% RH CTR (% )
Pulse width <=100µ s 100 200 500 210 -3 10 -25 2 10 -15 2 5 Fig. 3 Peak Forward Current vs. Duty Ratio Current transfer ratio CTR (% ) 120 140 100 2 5 10 20 50 R BE = 500k Ω 100k Ω Forward current IF (mA ) Collector current IC (mA) 2468 I F = 30mA 20mA 10mA 5mA 2mA Fig. 6 Collector Current vs. Collector-emitter Voltage IF = 10mA V CE =5 V R BE = 100 150 0 2 55 07 5 1 0 0 Relative current transfer ratio (% ) Fig. 7 Relative Current Transfer Ratio vs. Ambient Temperature 0.02 -3 0 0.04 IF = 20mA IC = 1mA 100 0.06 0.08 0.10 0.12 0.14 0 2 04 06 08 0 R BE = Fig. 8 Collector-emitter Saturation Voltage vs. Ambient Temperature Peak forward current IFM (mA ) Fig. 5 Current Transfer Ratio vs. Forward Current Ambient temperature Ta (˚C) V CE =5 V 200 160 180 Fig. 4 Forward Current vs. Forward Voltage Collector-emitter voltage VCE (V ) Ambient temperature Ta (˚C) R BE = T a = 25˚C P C (MAX. ) T a= 25˚C T a = 25˚C 50˚C 25˚C 0˚C 100 200 500 - 25˚C T a= 75˚C 10 000 5 000 2 000 1 000 -3 0 Forward current IF (mA ) Forward voltage VF (V ) Collector-emitter saturation voltage VCE (sat) (V )
-3 0 200 40 60 10 -1 2 80 100 10 -1 1 10 -1 0 10 -9 10 -8 10 -7 10 -6 10 -1 3 Fig. 9 Collector Dark Current vs. Ambient Temperature Fig.11 Frequency Response Frequency f (kHz ) 1 2 5 10 500 2001005020 R L =1 K Ω 100 Ω 10 Ω Collector dark current ICEO (A ) Ambient temperature Ta (˚C) Voltage gain Av (dB ) Forward current IF (mA ) 1mA 2mA 3mA 5mA I C = 0.5mA T a = 25˚C Fig.12 Collector-emitter Saturation Voltage vs. Forward CurrentCollector-emitter saturation voltage VCE (sat) (V ) R BE = L (k Ω ) 100 Response time (µ s) 0.5 0.1 0.2 0.01 0.1 1 10 tr tf td ts V CE =2 V IC = 2mA T a = 25˚C R BE = Test Circuit for Response Time 90% 10% Output Input RLInput Output VCC RD td ts tr t Test Circuit for Frequency Response VCC RL Output RD V CE =5 V IC = 2mA R BE = T a = 25˚C Please refer to the chapter V CE R BE = = 20V f 1 000 “ Precautions for Use ” . -1 0 Fig.10 Response Time vs. Load Resistance Load resistance R l