PC4H510NIP0F SHARP | Alldatasheet

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  1. Recognized by UL1577 (Double protection isolation), file No. E64380 (as model No. PC4H51) 2. Package resin : UL flammability grade (94V-0) ■ Features ■ Agency approvals/Compliance 1. Modems ■ Applications Mini-flat Half-pitch Package, High Collector-emitter Voltage Photocoupler 1. 4-pin Mini-flat Half pitch package (Lead pitch : 1.27mm) 2. Double transfer mold package (Ideal for Flow Soldering) 3. High collector-emitter voltage (VCEO : 350V) 4. Isolation voltage between input and output (V iso(rms) : 2.5kV) 5. Lead-free and RoHS directive compliant ■ Description PC4H510NIP0F contains an IRED optically coupled to a phototransistor. It is packaged in a 4-pin Mini-flat, half pitch type. Input-output isolation voltage(rms) is 2.5kV. Collector-emitter voltage is 350V and CTR is 40% to 240% at input current of 5mA. Sheet No.: D2-A02702EN Date Jun. 30. 2005 © SHARP Corporation Notice The content of data sheet is subject to change without prior notice. In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. PC4H510NIP0F

■ Internal Connection Diagram Anode Cathode Emitter Collector Sheet No.: D2-A02702EN ■ Outline Dimensions (Unit : mm)

4 H 5 1

4.4±0.2 5.3±0.3 0.2±0.05 7.0+0.2 −0.7 (1.7) 1.27±0.25 2.6±0.3 0.4±0.1 0.5+0.4 −0.2 2.0±0.20.1±0.1 Epoxy resin Date code SHARP mark "S" Anode mark *( ) : Reference Dimensions PC4H510NIP0F Product mass : approx. 0.05g Plating material : SnCu (Cu : TYP. 2%)

Date code (2 digit) A.D. 1990 1991 1992 1993 1994 1995 1996 1997 1998 1999 2000 2001 Mark A B C D E F H J K L M N Mark P R S T U V W X A B C Mark O N D Month January February March April May June July August September October November December A.D 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012

  • ·· 2nd digit Month of production 1st digit Year of production repeats in a 20 year cycle Sheet No.: D2-A02702EN Country of origin Japan Rank mark There is no rank mark indicator. PC4H510NIP0F

Sheet No.: D2-A02702EN ■ Electro-optical Characteristics Parameter Conditions Forward voltage Reverse current Terminal capacitance Collector dark current Transfer charac- teristics Current transfer ratio Collector-emitter saturation voltage Collector-emitter breakdown voltage Emitter-collector breakdown voltage Isolation resistance MIN. 5×10 TYP. 1.2 0.1 1×10 MAX. 1.4 250 0.3 Unit V V µA pF µA V mA2.0 4.0 12.0 V Ω µs µs Symbol VF IR Ct ICEO BVCEO BVECO IC VCE (sat) RISO tf Response time Rise time Fall time Input Output IF=20mA VR=4V V=0, f=1kHz VCE=200V, IF=0 IC=0.1mA, IF=0 IE=10µA, IF=0 IF=5mA, VCE=5V DC500V, 40 to 60%RH VCE=2V, IC=10mA, RL=100Ω − 41 0tr Cut-off frequency − 50 −fC kHzVCE=5V, IC=2mA, RL=100Ω −3dB Floating capacitance − 0.6 1.0Cf pFV=0, f=1MHz IF=20mA, IC=1mA 350 (Ta=25˚C) ■ Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Unit Input Forward current mA *1 Peak forward current A Power dissipation mW Output Collector-emitter voltage V Emitter-collector voltage V Collector current mA Collector power dissipation mW Total power dissipation mW *2 Isolation voltage Operating temperature ˚C Storage temperature ˚C *3 Soldering temperature IF IFM P VCEO VECO IC PC Ptot Viso (rms) Topr Tstg Tsol ˚C *1 Pulse width≤100µs, Duty ratio : 0.001 *2 40 to 60%RH, AC for 1 minute, f=60Hz *3 For 10s Rating Reverse voltage V VR 6 350 150 170 −25 to +100 −55 to +125 260 2.5 kV PC4H510NIP0F

Sheet No.: D2-A02702EN Total power dissipation Ptot (mW) 100 150 200 250 170 −25 0 25 50 75 100 125 Ambient temperature T a (˚C) Fig.4 Total Power Dissipation vs. Ambient Temperature 0 0.5 1 1.5 2 100 0.1 Forward voltage VF (V) Forward current IF (mA) Ta=100˚C Ta=−25˚C Ta=0˚C Ta=25˚C Ta=75˚C Ta=50˚C Fig.6 Forward Current vs. Forward Voltage Pulse width≤100µs Ta=25˚C Peak forward current IFM (mA) 100 1 000 10−3 10−2 10−1 1 Duty ratio Fig.5 Peak Forward Current vs. Duty Ratio Forward current IF (mA) −25 0 25 75 100 125 5550 Ambient temperature T a (˚C) Fig.1 Forward Current vs. Ambient Temperature 100 −25 0 25 75 100 125 5550 Ambient temperature T a (˚C) Diode power dissipation P (mW) Fig.2 Diode Power Dissipation vs. Ambient Temperature Collector power dissipation PC (mW) 100 150 200 250 −25 0 25 50 75 100 125 Ambient temperature T a (˚C) Fig.3 Collector Power Dissipation vs. Ambient Temperature PC4H510NIP0F

Sheet No.: D2-A02702EN 10−4 Collector dark current Iceo (A) 10−10 10−9 10−8 10−7 10−6 10−5 −30 −20 −10 10020 30 40 50 60 70 80 9001 0 Ambient temperature Ta (˚C) VCE=200V Fig.11 Collector Dark Current vs. Ambient Temperature Response time (µs) 0.1 100 0.1 10 1 Load resistance RL (kΩ) VCE=2V IC=2mA tf td ts tr Fig.12 Response Time vs. Load Resistance (active region) Relative current transfer ratio (%) 100 120 −25 −20 −10 0 10050 60 70 80 9010 20 30 40 Ambient temperature Ta (˚C) IF=5mA VCE=5V Fig.9 Relative Current Transfer Ratio vs. Ambient Temperature Collector-emitter saturation voltage VCE (SAT) (V) 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 −25 −20 −10 10050 60 70 80 9020 30 4001 0 Ambient temperature Ta (˚C) IF=20mA IC=1mA Fig.10 Collector - emitter Saturation Voltage vs. Ambient Temperature 2468 1 0 25mA 20mA 10mA 5mA Collector current IC (mA) Collector-emitter voltage VCE (V) Ta=25˚C IF=30mA 15mA PC (MAX.)=150mW Fig.8 Collector Current vs. Collector-emitter Voltage Current transfer ratio CTR (%) 100 120 140 160 180 200 0.1 100 101 Forward current IF (mA) VCE=5V Ta=25˚C Fig.7 Current Transfer Ratio vs. Forward Current PC4H510NIP0F

Sheet No.: D2-A02702EN Remarks : Please be aware that all data in the graph are just for reference and not for guarantee. 10% InputOutput Input Output 90%tstd VCC RD RL tftr Please refer to the conditions in Fig.12 and Fig.13 VCE Fig.14 Test Circuit for Response TimeFig.13 Response Time vs. Load Resistance (saturation region) Collector-emitter saturation voltage VCE (SAT) (V) 02 0 12 14 16 1868 1 024 Forward current IF (mA) Ta=25˚C IC=7mA IF=5mA IF=3mA IF=1mA IF=0.5mA Fig.15 Collector-emitter Saturation Voltage vs. Forward Current PC4H510NIP0F Response time (µs) VCC=5V IF=16mA 100101 0.1 100 1 000 Load resistance RL (kΩ) td tr td ts tf

Sheet No.: D2-A02702EN ■ Design Considerations While operating at IF<1.0mA, CTR variation may increase. Please make design considering this fact. This product is not designed against irradiation and incorporates non-coherent IRED.

  • Degradation In general, the emission of the IRED used in photocouplers will degrade over time. In the case of long term operation, please take the general IRED degradation (50% degradation over 5 years) into the design consideration.
  • Recommended Foot Print (reference) ✩ For additional design assistance, please review our corresponding Optoelectronic Application Notes. 1.5 1.27 0.8 6.3 (Unit : mm)
  • Design guide PC4H510NIP0F

Sheet No.: D2-A02702EN ■ Manufacturing Guidelines Reflow Soldering: Reflow soldering should follow the temperature profile shown below. Soldering should not exceed the curve of temperature profile and time. Please don't solder more than twice.

  • Soldering Method Flow Soldering : Due to SHARP's double transfer mold construction submersion in flow solder bath is allowed under the below listed guidelines. Flow soldering should be completed below 260˚C and within 10s. Preheating is within the bounds of 100 to 150˚C and 30 to 80s. Please don't solder more than twice. Hand soldering Hand soldering should be completed within 3s when the point of solder iron is below 400˚C. Please don't solder more than twice. Other notices Please test the soldering method in actual condition and make sure the soldering works fine, since the impact on the junction between the device and PCB varies depending on the tooling and soldering conditions. 123 4 300 200 100 0 0 (˚C) Terminal : 260˚C peak ( package surface : 250˚C peak) Preheat 150 to 180˚C, 120s or less Reflow 220˚C or more, 60s or less (min) PC4H510NIP0F

Sheet No.: D2-A02702EN Solvent cleaning: Solvent temperature should be 45˚C or below Immersion time should be 3 minutes or less Ultrasonic cleaning: The impact on the device varies depending on the size of the cleaning bath, ultrasonic output, cleaning time, size of PCB and mounting method of the device. Therefore, please make sure the device withstands the ultrasonic cleaning in actual conditions in advance of mass production. Recommended solvent materials: Ethyl alcohol, Methyl alcohol and Isopropyl alcohol In case the other type of solvent materials are intended to be used, please make sure they work fine in actual using conditions since some materials may erode the packaging resin.

  • Cleaning instructions
  • Presence of ODC PC4H510NIP0F This product shall not contain the following materials. And they are not used in the production process for this product. Regulation substances : CFCs, Halon, Carbon tetrachloride, 1.1.1-Trichloroethane (Methylchloroform) Specific brominated flame retardants such as the PBBOs and PBBs are not used in this product at all. This product shall not contain the following materials banned in the RoHS Directive (2002/95/EC).
  • Lead, Mercury, Cadmium, Hexavalent chromium, Polybrominated biphenyls (PBB), Polybrominated diphenyl ethers (PBDE).

Sheet No.: D2-A02702EN ■ Package specification

  • Tape and Reel package Package materials Carrier tape : A-PET (with anti-static material) Cover tape : PET (three layer system) Reel : PS Carrier tape structure and Dimensions F K E I D JG L B H A C H MAX. A 12.0±0.3 B 5.5±0.1 C 1.75±0.1 D 8.0±0.1 E 2.0±0.1 H 7.5±0.1 I 0.3±0.05 J 2.3±0.1 K 3.1±0.1 F 4.0±0.1 G φ1.5+0.1 −0 L φ1.6+0.1 −0 Dimensions List (Unit : mm) a c e g f b d a 330 b 13.5±1.5 c 100±1.0 d 13±0.5 e 23±1.0 f 2.0±0.5 g 2.0±0.5 Dimensions List (Unit : mm) Pull-out direction [Packing : 3 000pcs/reel] Reel structure and Dimensions Direction of product insertion PC4H510NIP0F
  • The circuit application examples in this publication are provided to explain representative applications of SHARP devices and are not intended to guarantee any circuit design or license any intellectual property rights. SHARP takes no responsibility for any problems related to any intellectual property right of a third party resulting from the use of SHARP's devices.
  • Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device. SHARP reserves the right to make changes in the specifications, characteristics, data, materials, structure, and other contents described herein at any time without notice in order to improve design or reliability. Manufacturing locations are also subject to change without notice.
  • Observe the following points when using any devices in this publication. SHARP takes no responsibility for damage caused by improper use of the devices which does not meet the conditions and absolute maximum ratings to be used specified in the relevant specification sheet nor meet the following conditions: (i) The devices in this publication are designed for use in general electronic equipment designs such as: --- Personal computers --- Office automation equipment --- Telecommunication equipment [terminal] --- Test and measurement equipment --- Industrial control --- Audio visual equipment --- Consumer electronics (ii) Measures such as fail-safe function and redundant design should be taken to ensure reliability and safety when SHARP devices are used for or in connection with equipment that requires higher reliability such as: --- Transportation control and safety equipment (i.e., aircraft, trains, automobiles, etc.) --- Traffic signals --- Gas leakage sensor breakers --- Alarm equipment --- Various safety devices, etc. (iii) SHARP devices shall not be used for or in connection with equipment that requires an extremely high level of reliability and safety such as: --- Space applications --- Telecommunication equipment [trunk lines] --- Nuclear power control equipment --- Medical and other life support equipment (e.g., scuba).
  • If the SHARP devices listed in this publication fall within the scope of strategic products described in the Foreign Exchange and Foreign Trade Law of Japan, it is necessary to obtain approval to export such SHARP devices.
  • This publication is the proprietary product of SHARP and is copyrighted, with all rights reserved. Under the copyright laws, no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, for any purpose, in whole or in part, without the express written permission of SHARP. Express written permission is also required before any use of this publication may be made by a third party.
  • Contact and consult with a SHARP representative if there are any questions about the contents of this publication. Sheet No.: D2-A02702EN ■ Important Notices PC4H510NIP0F [E207]