PC450T11 SHARP | Alldatasheet
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n Outline Dimensions ( Unit : mm) n Absolute Maximum Ratings data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, 4. Applicable to soldering reflow 5. Available tape-packaged products 1. Programmable controllers Parameter Symbol Rating Unit Input IF 50 mA IFM 1A Reverse voltage V R 6V P7 0 m W Output Emitter-collector voltage V ECO 6V E sj 20 mJ Collector current I C 150 mA P C 150 mW P tot 170 mW T opr - 30 to + 100 ˚C Storage temperature T stg - 40 to + 125 ˚C V iso 3.75 kV rms T sol 260 ˚C (Ta= 25˚C ) 1. Built-in breakdown diode for absorption of surge voltage 2. High current transfer ratio 3. Mini-flat package *3 AC for 1 min., 40 to 60% RH, f = 60Hz *2 Esj = 40V(V CEO )x 100mA (IC )x 10ms x 1/2 *1 Pulse width <=100µs, Duty ratio : 0.001 Forward current *1Peak forward current Power dissipation *2Surge endurance Collector power dissipation Total power dissipation *3 Isolation voltage *4Soldering temperature Photocoupler with Built-in Breakdown Diode for Surge Voltage Absorption Operating temperature *4 For 10 seconds PC450T11 PC450T11 n Package Specifications Model No. Package Specification PC450T11 Taping diameter 178mm (750pcs.) (CTR: MIN. 1 500% at IF = 5mA ) Anode mark
1 Anode
C0.4 4.4± 0.2 0.4± 0.1 2.54± 0.25 3.6± 0.3 2.6± 0.20.1± 0.1 5.3± 0.3 0.2± 0.05 0.5+ 0.4 -0.2 7.0+ 0.2 -0.7 (Input side)
2 Cathode
3 Emitter
4 Collector
Model No.
n Electro-optical Characteristics (Ta= 25˚C ) Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Forward voltage V F IF = 20mA - 1.2 1.4 V Reverse current I R V R =4 V - - 1 0 µ A Terminal capacitance C t V = 0, f = 1kHz - 30 250 pF Output ICEO V CE = 20V, IF =0 - - 5 µ A breakdown voltage BV CEO IF =0 IC = 0.1mA 40 - 60 V breakdown voltage BV ECO IE =1 0µ A, IF =0 6 - - V IC V CE = 2V, IF = 5mA 75 - - mA Transfer charac- teristics Collector-emitter saturation voltage V CE (sat) IF = 10mA IC = 100mA -- 0.5 V Isolation resistance R ISO 5x1 010 1011 - Ω Floating capacitance C f V = 0, f = 1MHz - 0.6 1.0 pF Response time Rise time tr V CE = 2V, IC = 2mA R L = 100Ω -5 0 - µ s -3 0 - µ sFall time tf Collector dark current Collector-emitter Collector current -3 0 0 25 50 75 100 125 Fig. 1 Forward Current vs. Ambient Temperature Ambient temperature Ta (˚C) Forward current IF (mA ) - 30 125 25 750 50 100 100 120 Fig. 2 Diode Power Dissipation vs. Ambient TemperatureDiode power dissipation P (mW ) Ambient temperature Ta (˚C) Emitter-collector DC500V, 40 to 60% RH PC450T11
Power dissipation Ptot(mW ) Ambient temperature Ta (˚C) -3 0 Temperature Duty ratio 100 200 500 210 -3 10 -25 2 10 -15 2 5 Peak forward current IFM (mA ) Pulse width <=100µ s Fig. 3 Power Dissipation vs. Ambient Fig. 4 Peak Forward Current vs. Duty Ratio 100 25˚C 0˚C - 25˚C75˚C Forward voltage VF (V ) Forward current IF (mA ) Forward Voltage 0.1 1.0 10 100 505.0 0.5V Forward current IF (mA ) Current tranfer ratio CTR (% ) V CE =2 V Forward Current 0 1.0 2.0 3.0 100 4.0 5.0 0.5mA 1mA 1.5mA 2mA 3mA 5mA 2.5mA Collector current IC (mA ) Collector-emitter voltage VCE (V ) -emitter Voltage Pc (max ) 02 04 06 08 01 0 0 100 150 Relative current transfer ratio (% ) -3 0 Ambient Temperature Fig. 5 Forward Current vs. Fig. 6 Current Tranfer Ratio vs. Fig. 7 Collector Current vs. Collector Fig. 8 Relative Current Transfer Ratio vs. Ambient temperature Ta (˚C) T a = 25˚C T a = 25˚C T a = 25˚C IF = 10mA IF = 1mA V CE =5 V 10000 5000 2000 1000 5000 4000 3000 2000 1000 50˚C
0.1 02 04 06 08 01 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 -3 0 Collector-emitter saturation voltage V CE (sat) (V ) Ambient temperature Ta (˚C) Ambient Temperature 0 40 80 100 6020 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 10 -9 Collector dark current ICEO (A ) Ambient temperature Ta (˚C) -3 0 Ambient Temperature 0.01 0.1 1 10 100 Response time (µ s) ts td tftr 100mA 70mA 50mA 30mA 10mA 8.06.04.02.00 1.0 2.0 3.0 4.0 5.0 Forward current IF (mA ) vs. Forward CurrentCollector-emitter saturation voltage V CE (sat) (V ) Fig.9 Collector-emitter Saturation Voltage vs. Fig.10 Collector Dark Current vs. Fig.12 Collector-emitter Saturation Voltage IF = 10mA IC = 100mA V CE = 20V V CE =2 V IC = 2mA T a = 25˚C IC = 5mA T a = 25˚C 1000 Please refer to the chapter “Precautions for Use. ” Load resistance (k Ω ) Fig.11 Response Time vs. Load Resistance l