PC356NT SHARP | Alldatasheet

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  1. Opaque type, mini-flat package (The volume is smaller than that of our 4. Isolation voltage between input and output n Applications 2. Programmable controllers 1. Hybrid substrates that require high density 1. High collector-emitter voltage PC356NT/ mounting conventional DIP type by as far as 30%.) PC356NT/ •••Viso n Features data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, Type Photocoupler Mini-Flat Package, High Collector-emitter Voltage 3. Subminiature type PC356NT/PC358 PC356NT/PC358 PC358 n Outline Dimensions (Unit : mm ) Input side diagram Internal connection Anode C0.4 mark

1 Anode

2 Cathode

3 Emitter

4 Collector

Model No. PC356NT/PC358 n Package Specifications Model No. Package specifications PC356NT PC358 Taping reel diameter 370mm (3000pcs.) Taping reel diameter 178mm ( 750pcs.) : 3 750Vrms 4.4± 0.2 2.54± 0.25 0.4± 0.1 3.6± 0.3 2.6± 0.20.1± 0.1 5.3± 0.3 0.2± 0.05 7.0+ 0.2 -0.7 0.5+ 0.4 -0.2 (PC358 •••VCEO : 120V, PC356NT •••VCEO : 80V) 5. Recognized by UL (No. E64380) PC358 (1-channel)

*3 For 10 senconds (Ta= 25˚C ) Symbol Rating Unit IF 50 mA 70 mW 80 V V120 50 mA 150 mW 170 mW 260 ˚C (Ta= 25˚C ) V R P V CEO V ECO IC P C IFM Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage V F IF = 20mA - 1.2 1.4 V Reverse current Terminal capacitance IR C t V R =4 V - 250 µ A pF Collector dark current ICEO V CE F =0 -- A BV CEO IC = 0.1mA, IF =0 -- V Emitter-collector breakdown voltage BV ECO I= 1 0µ A, I = 0 6 - - V Current transfer ratio CTR - 400 % Collector-emitter saturation voltage IF = 20mA, I C = 1mA - 0.2 V Isolation resistance R ISO 5x 1 010 - Ω Floating capacitance C f V = 0, f = 1MHz - 0.6 1.0 pF Response time Rise time tr V CE = 2V, IC = 2mA R L = 100Ω -6- µ s -1 8 µ s Fall time -8- µ s -1 8 µ s P tot V iso T opr T stg T sol - 30 to + 100 - 40 to + 125 Input Output Transfer- charac- teristics V CE (sat) 0.2mm or more Parameter Forward current *1Peak forward current Reverse voltage Power dissipation Collector-emitter voltage PC356NT Emitter-collector voltage Collector current Collector power dissipation Total power dissipation Operating temperature Storage temperature *3 Soldering temperature Input Output n Absolute Maximum Ratings n Electro-optical Characteristics tf *1 Pulse width<=100µ s, Duty ratio : 0.001 Soldering area = 40V, I I =5 VF CE EF I =5 VF CE = 5mA, V = 1mA, V 100 50 600 PC356NT/PC358 PC358 3 750 *2 40 to 60% RH, AC for 1 minute PC356NT PC358 PC356NT PC358 PC356NT PC358 PC356NT PC358 V CE F =0= 20V, I 1x1 0 -7 1011 DC500V, 40 to 60% RH *2Isolation voltage V = 0, f = 1kHz V rms Collector-emitter breakdown voltage PC356NT PC358 --120

Diode power dissipation P (mW ) 100 200 500 52 52 52 5 300 250 200 150 100 170 05 0 25 100 100 0 50 55 100 0 25 50 75 100 125 0 25 50 75 100 125 200 150 100 Forward current IF (mA )Collector power dissipation PC (mW )Peak forward current IFM (mA ) -3 0 -3 0 -3 0 Total power dissipation Ptot (mW ) -3 0 Fig. 1 Forward Current vs. Ambient Temperature Fig. 2 Diode Power Dissipation vs. Ambient Temperature Fig. 3 Collector Power Dissipation vs. Ambient Temperature Fig. 4 Total Power Dissipation vs. Ambient Temperature Fig. 5 Peak Forward Current vs. Duty Ratio Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Pulse width <=100µ s T a= 25˚C 110 -3 10 -2 10 -1 Fig. 6 Forward Current vs. Forward Voltage 10000 5000 2000 1000 50˚C 25˚C 0˚C 100 200 500 - 25˚C T a= 75˚C Forward current IF (mA ) Forward voltage VF (V ) PC356NT/PC358

Current transfer ratio CTR (% ) 0.1 1 10 100 1001010.1 200 160 120 100 140 180 Forward current I F (mA ) Current transfer ratio CTR (% ) Forward current IF (mA ) Collector-emitter voltage VCE (V ) Collector current IC (mA ) Fig. 7-a Current Transfer Ratio vs. Forward Current(PC356NT ) Forward Current Fig. 8-a Collector Current vs. Collector-emitter Voltage (PC356NT ) PC356NT/PC358 Fig. 7-b Current Transfer Ratio vs. (PC358 ) 20mA 10mA 5mA Collector-emitter voltage VCE (V ) Collector current IC (mA ) Collector-emitter Voltage (PC358 ) Fig. 8-b Collector Current vs. 100200-3 0 Relative current transfer ratio (% ) 150 100 60 80 Ambient temperature Ta (˚C) Fig. 9-a Relative Current Transfer Ratio vs. Ambient Temperature (PC356NT ) Relative current transfer ratio (% ) 150 100 806040200-3 0 100 Ambient temperature Ta (˚C) Fig. 9-b Relative Current Transfer Ratio vs. Ambient Temperature (PC358 ) V CE =5 V T a = 25˚C T a = 25˚C PC = 150mWIF= 30mA IF = 1mA V CE =5 V V CE =5 V T a = 25˚C IF = 30mA IF = 5mA V CE =5 V Pc=150mW

0.08 0.16 0.06 0.04 0.02 0.10 0.12 0.14 100-3 0 02 0 4 0 6 08 0 100 0.1 0.5 0.2 200 500 1010.10.01 Collector dark current ICEO (A ) 10 -5 10 -6 10 -7 10 -8 10 -9 10 -1 0 L (k Ω ) (µ s) Ambient temperature Ta (˚C) Collector-emitter saturation voltage V CE (sat) (V ) Ambient temperature Ta (˚C) 10 -1 1 Response time ts td tr tf vs. Ambient Temperature 100-3 0 02 0 4 06 0 8 0 0.08 0.16 0.06 0.04 0.02 0.10 0.12 0.14 Ambient temperature Ta (˚C) Collector-emitter saturation voltage V CE (sat) (V ) Fig.10-a Collector-emitter Saturation Voltage vs. Ambient Temperature (PC356NT ) Fig.10-b Collector-emitter Saturation Voltage (PC358 ) Ambient Temperature 100-3 0 02 0 4 0 6 08 0 Collector dark current ICEO (A ) 10 -5 10 -6 10 -7 10 -8 10 -9 10 -1 0 Ambient temperature Ta (˚C) 10 -1 1 Ambient Temperature Fig.11-a Collector Dark Current vs. (PC356NT )( PC358 ) Fig.11-b Collector Dark Current vs. 0.01 0.1 1 10 0.1 100 100 L (k Ω ) (µ s)Response time (PC356NT )( PC358 ) PC356NT/PC358 IF = 20mA IC = 1mA V CE = 20V V CE =2 V IC = 2mA T a = 25˚C tr tf td ts IF = 20mA IC = 1mA V CE =2 V IC = 2mA T a = 25˚C V CE = 40V Fig.12-a Response Time vs. Load Resistance Fig.12-b Response Time vs. Load Resistance Load resistance R Load resistance R

10% 90% Output Input Input Output RL VCC RD tstd tr tf 7.0mA 5.0mA 3.0mA 1.0mA 4.8 3.6 2.4 1.2 1512963 7mA 5mA 3mA 1mA 4.8 3.6 2.4 1.2 0 15129630 Forward current I F (mA ) Collector-emitter saturation voltage V CE (sat) (V ) Collector-emitter saturation voltage Fig.13-a Collector-emitter Saturation Voltage vs. Forward Current (PC356NT ) Voltage vs. Forward Current Test Circuit for Response Time Fig.13-b Collector-emitter Saturation (PC358 ) 30 seconds 230˚C 200˚C 180˚C 25˚C 2 minutes 1.5 minutes 1 minute 1 minute n Temperature Profile of Soldering Reflow (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. (2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). PC356NT/PC358 T a = 25˚C IC = 0.5mA T a = 25˚CIC = 0.5mA Please refer to the chapter V CE (sat) (V ) Forward current IF (mA ) “ Precautions for Use ” . l