PC355NT SHARP | Alldatasheet
Document overview
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Technical content
- High current transfer ratio 2. Opaque type, mini-flat package PC355NT (1-channel) 3. Subminirature type (The volume is smaller than that of our 4. Isolation voltage between input and output 5. Recognized by UL (NO. E64380) n Applications n Package Specifications mounting. 2. Programmable controllers n Outline Dimensions (CTR : MIN. 600% at IF = 1mA, V CE =2 V) 1. Hybrid substrates that require high density (Unit : mm ) conventional DIP type by as far as 30%) PC355NT Input side diagram Internal connection 355 Anode C0.4 mark PC355NT
1 Anode
2 Cathode
3 Emitter
4 Collector
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.” “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, High Sensitivity Photocoupler Mini-Flat Package, PC355NT PC355NT
- ••Viso : 3 750Vrms 4.4± 0.2 2.54± 0.25 0.4± 0.1 3.6± 0.3 2.6± 0.20.1± 0.1 5.3± 0.3 0.2± 0.05 7.0+ 0.2 -0.7 0.5+ 0.4 -0.2 Model No. Taping specifications PC355NT Taping reel diameter 178mm (750pcs.)
*3 For 10 senconds (Ta = 25˚C) Parameter Symbol Rating Unit Input Forward current I F 50 mA *1 Peak forward current I FM 1A Reverse voltage V R 6V Power dissipation P 70 mW Output Collector-emitter voltage V CEO 35 V Emitter-collector voltage 6 V Collector current I C 80 mA Collector power dissipation P C 150 mW Total power dissipation 170 mW *2 Isolation voltage V Operating temperature ˚C Storage temperature ˚C *3 Soldering temperature 260 ˚C V ECO P tot T opr T stg T sol 0.2mm or more Parameter Symbol Conditions MIN. TYP. MAX. Unit Input Forward voltage V F IF = 20mA - 1.2 1.4 V IR V R =4 V - - 1 0 µ A Terminal capacitance C t - 30 250 pF Output Collector dark current I CEO V CE = 10V, IF =0 - - A Collector-emitter breakdown voltage BV CEO IC = 0.1mA, IF = 0 35 - - V Emitter-collector breakdown voltage BV ECO IE =1 0µ A, IF =0 6 - - V Transfer- charac- teristics Current transfer ratio CTR I F = 1mA, V CE = 2V 600 % Collector-emitter saturation voltage V CE (sat) IF = 20mA, I C = 1mA - 0.8 1.0 V Isolation resistance R ISO 5x 1 010 1011 - Ω Floating capacitance C f V = 0, f = 1MHz - 0.6 1.0 pF Response time Rise time t r V CE = 2V, IC = 2mA R L = 100Ω - 60 300 µ s Fall time - 53 250 µ s (Ta= 25˚C ) - 30 to + 100 - 40 to + 125 n Absolute Maximum Ratings n Electro-optical Characteristics tf 10 -6 Soldering area iso *1 Pulse width <=100µs, Duty ratio : 0.001 Reverse current V = 0, f = 1kHz 3 750 *2 40 to 60% RH, AC for 1 minute DC500V, 40 to 60% RH 1 600 7 500 PC355NT V rms
Diode power dissipation P (mW ) 100 200 500 52 52 52 5 300 250 200 150 100 170 0 50 10025 100 0 50 55 100 0 25 50 75 100 125 0 25 50 75 100 125 200 150 100 Forward current IF (mA ) -3 0 Collector power dissipation PC (mW ) -3 0 Peak forward current IFM (mA ) 10 -3 10 -2 10 -1 -3 0 Total power dissipation Ptot (mW ) -3 0 Fig. 2 Diode Power Dissipation vs. Ambient Temperature Fig. 3 Collector Power Dissipation vs. Ambient Temperature Fig. 4 Total Power Dissipation vs. Ambient Temperature Fig. 5 Peak Forward Current vs. Duty Ratio Fig. 1 Forward Current vs. Ambient Temperature Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) Fig. 6 Forward Current vs. Forward Voltage Pulse width <=100µs T a= 25˚C 10000 5000 2000 1000 PC355NT 50˚C 25˚C 0˚C 100 200 500 - 25˚C T a= 75˚C Forward current IF (mA ) Forward voltage VF (V )
1001010.1 Current transfer ratio CTR (% ) 100200-3 0 1.6 1.0 0.6 60 808060 100 150 Relative current transfer ratio (% ) -3 0 0 20 100 0.2 0.4 0.8 1.2 1.4 806040200-3 0 100 0.01 0.1 1 10 500 200 0.2 0.5 0.1 100 100 Forward current IF (mA ) Collector dark current ICEO (A ) 10 -5 10 -6 10 -7 10 -8 10 -9 10 -1 0 10 -1 1 Collector current IC (mA ) Collector-emitter voltage VCE (V ) Response time (µ s) Fig. 7 Current Transfer Ratio vs. Forward Current Fig. 9 Relative Current Transfer Ratio vs. Ambient Temperature Fig.10 Collector-emitter Saturation Voltage vs. Ambient Temperature Fig.11 Collector Dark Current vs. Ambient Temperature Fig. 8 Collector Current vs. Collector- emitter Voltage Ambient temperature Ta (˚C) Collector-emitter saturation voltage V CE (sat) (V ) Ambient temperature Ta (˚C) Ambient temperature Ta (˚C) T a= 25˚C V CE =2 V IF = 10mA T a= 25˚C P C (MAX. ) V CE =2 V IF = 1mA IC = 1mA IF = 20mA V CE = 10V V CE =2 V IC = 2mA T a= 25˚C ts td tf tr 5000 4000 3000 2000 1000 PC355NT Fig.12 Responce Time vs. Load Resistance Load resistance RL (k Ω )
1.6 3.2 4.8 6.4 1mA 3mA 5mA 7mA 30mA 50mA Forward current I F (mA ) 10% 90% Output Input Input Output RL VCC RD tstd tr tf Test Circuit For Response Time n Temperature Profile of Soldering Reflow (1) One time soldering reflow is recommended within the condition of temperature and time profile shown below. (2) When using another soldering method such as infrared ray lamp, the temperature may rise partially in the mold of the device. Keep the temperature on the package of the device within the condition of above (1). 30 seconds 230˚C 200˚C 180˚C 25˚C 2 minutes 1.5 minutes 1 minute 1 minute Fig.13 Collector-emitter Saturation Voltage vs. Forward CurrentCollector-emitter saturation voltage V CE (sat) (V ) T a= 25˚C IC = 0.5mA PC355NT Please refer to the chapter “ Precautions for Use.”l