PB51 APEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL prodlit@apexmicrotech.com
FEATURES
- WIDE SUPPLY RANGE — ±15V to ±150V
- HIGH OUTPUT CURRENT — 1.5A Continuous (PB51), 2.0A Continuous (PB51A)
- VOLTAGE AND CURRENT GAIN
- HIGH SLEW — 50V/µs Minimum (PB51) 75V/µs Minimum (PB51A)
- PROGRAMMABLE OUTPUT CURRENT LIMIT
- HIGH POWER BANDWIDTH — 320 kHz Minimum
- LOW QUIESCENT CURRENT — 12mA Typical
- EVALUATION KIT — EK29
APPLICATIONS
- HIGH VOLTAGE INSTRUMENTATION
- ELECTROSTATIC TRANSDUCERS & DEFLECTION
- PROGRAMMABLE POWER SUPPLIES UP TO 280V P-P
DESCRIPTION
The PB51 is a high voltage, high current amplifier designed to provide voltage and current gain for a small signal, general purpose op amp. Including the power booster within the feed- back loop of the driver amplifier results in a composite amplifier with the accuracy of the driver and the extended output voltage range and current capability of the booster. The PB51 can also be used without a driver in some applications, requiring only an external current limit resistor to function properly. The output stage utilizes complementary MOSFETs, pro - viding symmetrical output impedance and eliminating second breakdown limitations imposed by Bipolar Transistors. Internal feedback and gainset resistors are provided for a pin-strapable gain of 3. Additional gain can be achieved with a single external resistor. Compensation is not required for most driver/gain configurations, but can be accomplished with a single external capacitor. Enormous flexibility is provided through the choice of driver amplifier, current limit, supply voltage, voltage gain, and compensation. This hybrid circuit utilizes a beryllia (BeO) substrate, thick film resistors, ceramic capacitors and semiconductor chips to maximize reliability, minimize size and give top performance. Ultrasonically bonded aluminum wires provide reliable inter - connections at all operating temperatures. The 12-pin Power SIP package is electrically isolated. TYPICAL APPLICATION EQUIVALENT SCHEMATIC EXTERNAL CONNECTIONS 12-PIN SIP PACKAGE STYLE DP Formed leads available. See package styles ED & EE
APEX MICROTECHNOLOGY CORPORATION • 5980 NORTH SHANNON ROAD • TUCSON, ARIZONA 85741 • USA • APPLICATIONS HOTLINE: 1 (800) 546-2739 ABSOLUTE MAXIMUM RATINGS SPECIFICATIONS PB51 • PB51A SUPPLY VOLTAGE, +VS to –VS 300V OUTPUT CURRENT, within SOA 2.0A POWER DISSIPATION, internal at TC = 25°C1 83W INPUT VOLTAGE, referred to COM ±15V TEMPERATURE, pin solder—10s max. 260°C TEMPERATURE, junction1 175°C TEMPERATURE RANGE, storage –40 to +85°C OPERATING TEMPERATURE RANGE, case –25 to +85°C SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS PB51 PB51A PARAMETER TEST CONDITIONS2 MIN TYP MAX MIN TYP MAX UNITS INPUT OFFSET VOLTAGE, initial ±.75 ±1.75 * ±1.0 V OFFSET VOLTAGE, vs. temperature Full temperature range 3 –4.5 –7 * * mV/°C INPUT IMPEDANCE, DC 25 50 * * k INPUT CAPACITANCE 3 * pF CLOSED LOOP GAIN RANGE 3 10 25 * * * V/V GAIN ACCURACY, internal Rg, Rf AV = 3 ±10 ±15 * * % GAIN ACCURACY, external Rf AV = 10 ±15 ±25 * * % PHASE SHIFT f = 10kHz, AVCL = 10, CC = 22pF 10 * ° f = 200kHz, AVCL = 10, CC = 22pF 60 * ° OUTPUT VOLTAGE SWING Io = 1.5A (PB58), 2A (PB58A) VS–11 VS –8 VS–15 VS–11 V VOLTAGE SWING Io = 1A VS–10 VS –7 * * V VOLTAGE SWING Io = .1A VS–8 VS –5 * * V CURRENT, continuous 1.5 2.0 A SLEW RATE Full temperature range 50 100 75 * V/µs CAPACITIVE LOAD Full temperature range 2200 * pF SETTLING TIME to .1% RL = 100, 2V step 2 * µs POWER BANDWIDTH VC = 100 Vpp 160 320 240 * kHz SMALL SIGNAL BANDWIDTH CC = 22pF, AV = 25, Vcc = ±100 100 * kHz SMALL SIGNAL BANDWIDTH CC = 22pF, AV = 3, Vcc = ±30 1 * MHz POWER SUPPLY VOLTAGE, ±VS4 Full temperature range ±156 ±60 ±150 * * * V CURRENT, quiescent VS = ±15 11 * mA VS = ±60 12 * mA VS = ±150 14 18 * * mA THERMAL RESISTANCE, AC junction to case5 Full temp. range, f > 60Hz 1.2 1.3 * * °C/W RESISTANCE, DC junction to case Full temp. range, f < 60Hz 1.6 1.8 * * °C/W RESISTANCE, junction to air Full temperature range 30 * °C/W TEMPERATURE RANGE, case Meets full range specifications –25 25 85 * * * °C NOTES: * The specification of PB51A is identical to the specification for PB51 in applicable column to the left. 1. Long term operation at the maximum junction temperature will result in reduced product life. Derate internal power dissipation to achieve high MTTF (Mean Time to Failure). 2. The power supply voltage specified under typical (TYP) applies, T C = 25°C unless otherwise noted. 3. Guaranteed by design but not tested. 4. +V S and –VS denote the positive and negative supply rail respectively. 5. Rating applies if the output current alternates between both output transistors at a rate faster than 60Hz. 6. +V S/–VS must be at least 15V above/below COM. The PB51 is constructed from MOSFET transistors. ESD handling procedures must be observed. The internal substrate contains beryllia (BeO). Do not break the seal. If accidentally broken, do not crush, machine, or subject to temperatures in excess of 850°C to avoid generating toxic fumes. CAUTION
APEX MICROTECHNOLOGY CORPORATION • TELEPHONE (520) 690-8600 • FAX (520) 888-3329 • ORDERS (520) 690-8601 • EMAIL prodlit@apexmicrotech.com TYPICAL PERFORMANCE GRAPHSPB51 • PB51A
- Operate the booster in the lowest practical gain.
- Operate the driver amplifier in the highest practical effective
- Keep gain-bandwidth product of the driver lower than the
closed loop bandwidth of the booster.
- Minimize phase shift within the loop.
square wave response with the op amp drivers listed. equal to the booster slew rate. calculating maximum available driver swing. minimum value is 0.33 with a maximum practical value of 47. NOTE: The output stage is protected against transient flyback. back, external fast-recovery diodes should be used. are gain, stability, slew rate, and output swing of the driver. driver, but makes stability more difficult to achieve. to the composite gain divided by the booster gain. FIGURE 2. NON-INVERTING COMPOSITE AMPLIFIER. This data sheet has been carefully checked and is believed to be reliable, however, no responsibility is assumed for possible inaccuracies or omissions. All specifications are subject to change without notice. PB51U REV D OCTOBER 2004 © 2004 Apex Microtechnology Corp.