P60B6EL DOINGTER | Alldatasheet
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Channel MOSFET uses advanced SGT technology and www.doingter.cn — 1 — Description： This N- design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=60V,ID=70 A,RDS(ON)<6mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃1 A Pulsed Drain Current2 IS ISP 210 mJ PD Power Dissipation3,TC=25℃4 W EAS MJ TJ, TSTG Operating and Storage Junction Temperature Range -55 to +175 Thermal Characteristics： Symbol Parameter Max Units D S G Diode forward current Pulsed source current Single pulsed avalanche energy4) RƟJC Thermal Resistance,Junction to Case1 62 ℃/W RƟJA Thermal Resistance,Junction to Ambient4 1.4 P60B6EL All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=60V --- --- μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA --- 2.5 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 4.7 VGS=4.5V,ID=10A --- 6.4 Rg --- 2.8 --- S Dynamic Characteristics Ciss Input Capacitance VDS=50V, VGS=0V, f=1MHz --- 2136 --- pF Coss Output Capacitance --- 331.5 --- Crss Reverse Transfer Capacitance --- 10.6 --- Switching Characteristics td(on) Turn-On Delay Time3 VDD=50V, ID=25A, VGS=10V,RGEN=2Ω --- 22.9 --- ns tr Rise Time2,3 --- 6.5 --- ns td(off) Turn-Off Delay Time --- 45.7 --- ns tf Fall Time2,3 --- 20.4 --- ns Qg Total Gate Charge3 VGS=10V, VDS=25V, ID=25A --- --- nC Qgs Gate-Source Charge --- 5.8 --- Gate Resistance f=1MHz, Open drain mΩ P60B6EL All d ata sheet.com
Figure 11, Safe operation area TO252/ PDFN5*6/TO220 TC=25 ℃ , - - 0.1 1 10 100 0.1 100 1000 10 ms VDS, Drain-source voltage(V) ID, Drain current(A) 10 μs DC 1 ms 100 μs RDS(ON) Limited , Max. transient thermal impedance for TO252/ PDFN5*6/TO220 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 zthjc Thermal Response(K/W) D= tp/T Single Pulse 0.01 0.02 0.05 0.1 0.2 0.5 D= 1 tp Pulse width(s) www.doingter.cn — —5 P60B6EL 0086-0755-8278-9056 All d ata sheet.com