P60B4EL DOINGTER | Alldatasheet
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www.doingter.cn — 1 — Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID=80A,RDS(ON)<2.5mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ A Continuous Drain Current-TC=125℃ IDM Pulsed Drain Current2 240 IAR A EAS Single Pulse Avalanche Energy3 170 mJ W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 Thermal Characteristics： Avalanche Current, Repetitive PD Power Dissipation Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.8 ℃/W RƟJA Thermal Resistance Junction to mbient 62 ℃/W D S G P60B4EL All d ata sheet.com
www.doingter.cn — 2 — Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=40V --- --- μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1.2 1.8 2.4 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=35A --- 2.1 2.5 mΩ VGS=4.5V,ID=15A --- 3.1 4.5 Dynamic Characteristics Ciss Input Capacitance VDS=20V, VGS=0V, f=1MHz --- 2900 pF Coss Output Capacitance --- 758 Crss Reverse Transfer Capacitance --- Switching Characteristics td(on) Turn-On Delay Time VDD=20V , VGS=10V , RG=1.6Ω，ID=35A --- ns tr Rise Time --- ns td(off) Turn-Off Delay Time --- ns tf Fall Time --- ns Qg Total Gate Charge VGS=10V, VDS=20V, ID=35A --- 6.1 nC Qgs Gate-Source Charge --- 4.7 nC --- --- --- --- --- --- --- --- --- P60B4EL All d ata sheet.com
— 3 — Qgd Gate-Drain “Miller” Charge --- 40 nC Drain-Source Diode Characteristics Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=35A --- 0.84 --- V trr Continuous Source Current --- 52 --- ns qrr Pulsed Source Current --- 91 --- nC Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) VR=20V, IF=35A dIF/dt=100A/us --- 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device op eration is not implied. 2. Repetitive Rating: Pulse width lim ited by maximum junction temperature 3. IAS= 20.0A, VDD= 20V, RG= 25 Ω , Starting TJ = 25°C www.doingter.cn Figure 1: Power Dissipation Figure 2: Max. Transient Thermal Impedance P60B4EL All d ata sheet.com
www.doingter.cn — 4 — Figure3: Drain Current Figure4: Typ. Output Characteristics Figure5: Typ. Drain-Source On-State Resistance Figure6: Typ. Transfer Characteristics P60B4EL All d ata sheet.com
Figure9: Typ. Gate Threshold Volt age Figure 10: Typ. Gate Charge Figure7: Typ. Forward Transconductance Figure 8: Typ. Drain-Source On-State Resistance www.doingter.cn — —5 j P60B4EL All d ata sheet.com