P5274

P2748_07 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Choice of spectral response range (up to 25 µm) The band gap can be adjusted by controlling the composition ratio of HgTe and CdTe. Utilizing this fact, various types are available in different spectral characteristics. /K6C Photoconductive element that decreases its resistance by input of infrared light /K6C Micro-cooled type available This type of cooling does not require pour-filled liquid nitrogen. /K6C Custom devices available Custom devices not listed in this catalog are also available with different spectral response, active area sizes and number of elements. Glass dewar type not requiring repumping is also provided.

Applications

/K6C FTIR /K6C Infrared spectrophotometer /K6C Thermal imaging /K6C Remote sensing /K6C CO 2 laser detection Accessories (Optional) /K6C Valve operator A3515 /K6C Amplifiers for dewar type MCT photoconductive detector C5185 /K6C Infrared detector module with preamp P7752-10 I General rating / Absolute maximum ratings Absolute maximum ratingsNitrogen maintenance time Allowable current Operating temperature Storage temperatureActive areaType No. Dimensional outline/ Window material * 1 Package Cooling (mm) Min. (h) (mA) Topr (°C) Tstg (°C) P2748-40 ➀ /Z Side-on type metal dewar 1 × 1 40 P2748-41 ➁ /Z Head-on type metal dewar 1 × 1 40 P2748-42 0.25 × 0.25 20 P5274 ➀ /Z 1 × 1 40 P5274-01 ➀ /K Side-on type metal dewar LN2 1 × 1 -40 to +60 -55 to +60 P3257-50 ➂ /Z Stirling type metal Micro-cooled 1 × 1 - 40 -40 to +55 -45 to +55 I Electrical and optical characteristics (Typ. unless otherwise noted) Measurement condition Element temperature T Peak sensitivity wavelength λp Cut-off wavelength λc Photo sensitivity *2 S λ=λp (500, 1200, 1) (λp, 1200, 1) NEP λ=λp Rise time tr 0 to 63 % Dark resistance RdType No. (°C) (µm) (µm) (V/W) Min. (cm·Hz 1/2 /W) Typ. (cm·Hz 1/2 /W) (cm· Hz 1/2 /W) (W/Hz1/2)( µ s ) (Ω ) P2748-40 1000 2.5 × 10 -12 P2748-41 1000 2.5 × 10 -12 P2748-42 12 14 10000 1 × 1010 2 × 1010 4.0 × 1010 6.3 × 10-12 0.6 40 P5274 14 17 500 2 × 10 9 1 × 1010 1.5 × 1010 6.7 × 10-12 0.6 30 P5274-01 17 22 250 1 × 10 9 5 × 109 1.0 × 1010 1.0 × 10-11 0.4 100 P3257-50 -196 12 14 1000 1 × 10 10 2 × 1010 4.0 × 1010 2.5 × 10-12 0.6 40 *1: Window material K: KRS-5, Z: ZnSe *2: Photo sensitivity changes with the bias current. The values in the above table are measured with the optimum bias current.

MCT photoconductive detector P2748/P5274 series, P3257-50 100 NOISE (nV/Hz ) 10 100 FREQUENCY (Hz) 1000 10000 (Typ. ) WAVELENGTH (µm) 0 5 10 15 20 25 1010 109 108 D * (cm · Hz /W) P5274-01 P2748-40 P5274 RELATIVE VALUE BIAS CURRENT (mA) 0 5 10 20 25 (Typ.) D * S N I Spectral response KIRDB0072EC I S/N vs. bias current KIRDB0073EB I Noise frequency characteristic KIRDB0074EC Spectral response can be shifted upon request. The detector must be operated in a range where the D* becomes Max. I Measurement circuit KIRDC0007EA CHOPPER 1200 Hz BAND-PASS FILTER r.m.s. METER BLACK BODY 500 K DETECTOR fo=1200 Hz ∆f=120 Hz INCIDENT ENERGY: 2.64 µW/cm2

MCT photoconductive detector P2748/P5274 series, P3257-50 I Dimensional outlines (unit: mm) KIRDA0131ED ➀ P2748-40/-42, P5274 series KIRDA0129EB ➁ P2748-41 DETECTOR NC DETECTOR 10 ± 0.5 51.2 ± 1 7.9 ± 1 173.5 ± 2 PUMP-OUT PORT 9.5 OUTPUT PIN LN 2 FILL PORT 12.5 32 ± 16.5 70 ± 2 95 ± 2 102 ± 2 28.5 63.5 ± 1 66 MAX. 46 ± 1 PHOTOSENSITIVE SURFACE 51 ± 1 32 ± 146 ± 144.5 ± 1 37 ± 1 10 ± 0.5 6.5 72 ± 1 95 ± 1 102 ± 1 66.8 ± 1 10 ± 1 172 ± 2 28.5 63.5 ± 1 LN 2 FILL PORT 12.5 PHOTOSENSITIVE SURFACE SIGNAL OUTPUT LEAD PUMP-OUT PIPE 9.5 DETECTOR NC DETECTOR

MCT photoconductive detector P2748/P5274 series, P3257-50 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. Cat. No. KIRD1021E05 Mar. 2007 DN KIRDA0130EA ➂ P3257-50 KIR 12.825.9 26.8 50.8 ± 0.1 56.0 ± 0.3 20.1 MAX. 34.8 MAX. 39.4 10.6 MAX. -0.01 12.7 29.0 MAX. FOV 23.8 28.3 MAX. 38.9 MAX. PUMP-OUT VALVE 10 MAX. (2 ×) 56UNC-2B DEPTH: 5.5 4PL MOUNTING HOLE PHOTOSENSITIVE SURFACE MOUNT SIDE OUTPUT PIN 14.5 MAX. 50.3 MAX. 27.4 MAX. 26.7 50.1 MAX. 81.1 MAX. 58 36.4 Board thickness including mounted components: 20 MAX. 70.0 76.5 (4 ×) 2.5