P4SMA100A

P4SMA550CA CYSTEKEC | Alldatasheet

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Technical content

CYStech Electronics Corp. Spec. No. : C767SA Issued Date : 2009.05.19 Revised Date :2010.01.14 Page No. : 1/5 P4SMA6.8A thru P4SMA550CA CYStek Product Specification Surface Mount Transient Voltage Suppressors Peak Pulse Power 400W Breakdown Voltage 6.8 to 550V P4SMA6.8A thru P4SMA550CA Features Outline

• Low profile package with built-in strain relief for surface mounted DO-214AC (SMA)

applications

• Plastic package has UL flammability classification 94V-0
• Ideal for ESD protection of data line in accordance with IEC1000-4-2 (IEC801-2)
• Ideal for EFT protection of data line in accordance with IEC1000-4-4 (IEC801-4)
• Very-fast response time
• Optimized for LAN protection applications
• Low incremental surge resistance, excellent clamping capability
• Glass passivated junction
• High temperature soldering guaranteed: 250°C/10seconds at terminals
• 400W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle) : 0.01% (300W above 91V) Mechanical Data
• Case : JEDEC DO-214AC(SMA) molded plastic body
• Terminals: Pure tin plated, solderable per MIL-STD-750 method 2026
• Polarity: For uni-directional types, the band denotes the cathode, which is positive with respective to the anode under normal TVS operation
• Mounting position : Any
• Weight: 0.002 oz., 0.064 gram Devices for bidirectional applications For bi-directional devices, use suffix CA (e.g. P4SMA10CA). Electrical characteristics apply in both directions. Maximum Ratings and Characteristics(TA=25°C, unless otherwise noted) Parameter Symbol Value Unit Peak pulse power dissipation with a 10/1000μs waveform (Fig. 1) PPPM Minimum 400 (Note 1, 2) W Peak pulse current with a 10/1000μs waveform (Fig. 3) IPPM See next table (Note 1) A Power dissipation on infinite heatsink, TA= 5 0 ° C PM(AV) 1 W Peak forward surge current, 8.3ms single half sine wave uni-directional only (Note 2) IFSM 40 A Typical thermal resistance, junction-to-leads RθJL 30 °C/W Typical thermal resistance, junction-to-ambient (Note 3) RθJA 120 °C/W Operating junction and storage temperature range TJ;TSTG -55 ~ +150 °C 2.Mounted on 0.2” ×0.2” (5mm×5mm) copper pads to each terminal 3.Mounted on minimum recommended pad layout

CYStech Electronics Corp. Spec. No. : C767SA Issued Date : 2009.05.19 Revised Date :2010.01.14 Page No. : 2/5 P4SMA6.8A thru P4SMA550CA CYStek Product Specification Electrical Characteristics Ratings at 25℃ ambient temperature, unless otherwise noted. VF=3.5V at IF=25A (uni-directional only) Device Marking Code Breakdown Voltage V(BR) (V) Device UNI BI Min Max Test current at IT (mA) Standoff voltage VWM (V) Maximum reverse leakage at VWM ID (μA) Maximum peak pulse Current IPPM (A) Maximum clamping voltage at IPPM VC (V) Maximum temperature coefficient of V(BR) (%/°C) P4SMA 120A 120A 120C 114 126 1.0 102 1.0 3.6 165 0.107 P4SMA 130A 130A 130C 124 137 1.0 111 1.0 3.4 179 0.107 P4SMA 150A 150A 150C 143 158 1.0 128 1.0 2.9 207 0.108 P4SMA 160A 160A 160C 152 168 1.0 136 1.0 2.7 219 0.108 P4SMA 170A 170A 170C 162 179 1.0 145 1.0 2.6 234 0.108 P4SMA 180A 180A 180C 171 189 1.0 154 1.0 2.4 246 0.108 P4SMA 200A 200A 200C 190 210 1.0 171 1.0 2.2 274 0.108

CYStech Electronics Corp. Spec. No. : C767SA Issued Date : 2009.05.19 Revised Date :2010.01.14 Page No. : 3/5 P4SMA6.8A thru P4SMA550CA CYStek Product Specification Electrical Characteristics(Cont.) Device Marking Code Breakdown Voltage V(BR) (V) Device UNI BI Min Max Test current at IT (mA) Standoff voltage VWM (V) Maximum reverse leakage at VWM ID (μA) Maximum peak pulse Current IPPM (A) Maximum clamping voltage at IPPM VC (V) Maximum temperature coefficient of V(BR) (%/°C) P4SMA 220A 220A 220C 209 231 1.0 185 1.0 1.8 328 0.108 P4SMA 250A 250A 250C 237 263 1.0 214 1.0 1.7 344 0.108 P4SMA 300A 300A 300C 285 315 1.0 256 1.0 1.4 414 0.108 P4SMA 350A 350A 350C 333 368 1.0 300 1.0 1.2 482 0.108 P4SMA 400A 400A 400C 380 420 1.0 342 1.0 1.1 548 0.108 P4SMA 440A 440A 440C 418 462 1.0 376 1.0 1.0 602 0.108 P4SMA 480A 480A 480C 456 504 1.0 408 1.0 0.9 658 0.108 P4SMA 510A 510A 510C 485 535 1.0 434 1.0 0.9 698 0.108 P4SMA 540A 540A 540C 513 567 1.0 459 1.0 0.8 740 0.108 Note: 1.V(BR) measured after IT applied for 300μs, IT=square wave pulse or equivalent 2.Surge current waveform per Fig. 3 and derate per Fig.2 3.For bidirectional types with VWM of 10 volts and less, the ID limit is doubled 4.All terms and symbols are consistent with ANSI/IEEE C62.35

CYStech Electronics Corp. Spec. No. : C767SA Issued Date : 2009.05.19 Revised Date :2010.01.14 Page No. : 4/5 P4SMA6.8A thru P4SMA550CA CYStek Product Specification Characteristic Curves

CYStech Electronics Corp. Spec. No. : C767SA Issued Date : 2009.05.19 Revised Date :2010.01.14 Page No. : 5/5 P4SMA6.8A thru P4SMA550CA CYStek Product Specification DO-214AC/SMA Dimension DO-214AC/SMA Plastic Surface Mounted Package CYStek Package Code : SA *:Typical Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material :

• Lead : Pure tin plated
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.