MTN2N65CJ3 CYSTEKEC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

Features

  • Low On Resistance
  • Simple Drive Requirement
  • Low Gate Charge
  • Fast Switching Characteristic
  • Pb-free lead plating and halogen-free package

Applications

  • Open Framed Power Supply
  • Adapter
  • STB Symbol Outline

Ordering Information

(Pb-free lead plating and halogen-free package) 2500 pcs / Tape & Reel TO-252(DPAK) MTN2N65CJ3 G：Gate D：Drain S：Source G D S Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name

CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 2/9 MTN2N65CJ3 CYStek Product Specification Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS 650 Gate-Source V oltage VGS ±30 V Continuous Drain Current 2.0 Continuous Drain Current @TC=100°C ID 1.3 Pulsed Drain Current @ VGS=10V (Note 1) IDM 8.0 Single Pulse Avalanche Current (Note 2) IAS 2 A Single Pulse Avalanche Energy @L=2mH, VGS=10V , VDD= 50V (Note 2) EAS 4 Repetitive Avalanche Energy (Note 1) EAR 2 mJ Maximum Temperature for Soldering @ Lead at 0.125 in(0.318mm) from case for 10 seconds TL 300 °C Total Power Dissipation (TA=25℃) 1.14 W W Total Power Dissipation (TC=25℃) Linear Derating Factor PD 44

0.35 W/°C

Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Note : 1.Pulse width limited by maximum junction temperature. 2.100% testsed by conditions of IAS=1A, VDD=50V, L=2mH, VGS=10V, starting TJ=+25℃. Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max RθJC 2.8 Thermal Resistance, Junction-to-ambient, max RθJA 110 °C/W

CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 3/9 MTN2N65CJ3 CYStek Product Specification Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 650 - - V VGS=0V , ID=250μA, Tj=25℃ ∆BVDSS/∆Tj - 0.7 - V/°C Reference to 25°C, ID=250μA VGS(th) 2.0 - 4.0 V VDS = VGS, ID=250μA *GFS - 2.3 - S VDS =15V , ID=1A IGSS - - ±100 nA VGS=±30V - - 1 VDS =650V , VGS =0V IDSS - - 10 μA VDS =520V , VGS =0V , TC=125°C *RDS(ON) - 4.5 5.8 Ω VGS =10V , ID=1A Dynamic *Qg - 7.8 11.7 *Qgs - 2.3 - *Qgd - 2.4 - nC ID=2A, VDD=520V , VGS=10V *td(ON) - 5.4 10.8 *tr - 3.2 6.4 *td(OFF) - 8.6 17.2 *tf - 5.6 11.2 ns VDD=325V , ID=1.8A, VGS=10V , RG=25Ω Ciss - 268 402 Coss - 32 48 Crss - 11 16 pF VGS=0V , VDS=25V , f=1MHz Rg - 3.7 - Ω f=1MHz Source-Drain Diode *IS - - 2 *ISM - - 8 A *VSD - 0.8 1.5 V IS=1A, VGS=0V *trr - 286 - ns *Qrr - 760 - nC VGS=0V , IF=1.8A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended soldering footprint

CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 4/9 MTN2N65CJ3 CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 1 02 03 04 05 0 VDS, Drain-Source Voltage(V) ID, Drain Current(A) VGS=4V 10V,9V,8V,7V,6V,5.5V 4.5V Brekdown Voltage vs Ambient Temperature 0.6 0.7 0.8 0.9 1.1 1.2 -75 -50 -25 0 25 50 75 100 125 150 175 TA, Ambient Temperature(°C) BVDSS, Normalized Drain-Source Breakdown Voltage ID=250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 0.001 0.01 0.1 1 10 ID, Drain Current(A) RDS(on), Static Drain-Source On-State Resistance(Ω) VGS=10V Drain Current vs Gate-Source Voltage 0.5 1.5 2.5 3.5 02468 1 0 VGS, Gate-Source Voltage(V) ID, Drain Current(A) TA=25°C VDS=10V VDS=30V Static Drain-Source On-State Resistance vs Gate-Source Voltage 02468 1 0 VGS, Gate-Source Voltage(V) RDS(on), Static Drain-Source On- State Resistance(Ω) ID=1A Ta=25°C Forward Drain Current vs Source-Drain Voltage 0.001 0.01 0.1 VSD, Source Drain Voltage(V) IF, Forward Current(A) VGS=0V Tj=25°C Tj=150°C

CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 5/9 MTN2N65CJ3 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Reverse Voltage 100 1000 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage(V) Capacitance-(pF) Ciss Coss Crss f=1MHz Static Drain-Source On-resistance vs Ambient Temperature 0.4 0.8 1.2 1.6 2.4 2.8 3.2 -75 -50 -25 0 25 50 75 100 125 150 175 T A, Ambient Temperature(°C) RDS(on), Normalized Static Drain-Source On-state Resistance ID=1A, VGS=10V Maximum Safe Operating Area 0.01 0.1 1 10 100 1000 VDS, Drain-Source Voltage(V) ID, Drain Current(A)Operation in this area is limited by RDS(ON) DC 10ms 100ms 100μs 1ms Gate Charge Characteristics 02468 1 0 Qg, Total Gate Charge(nC) VGS, Gate-Source Voltage(V) ID=1.8A VDS=130V VDS=325V VDS=520V Maximum Drain Current vs Case Temperature 0.5 1.5 2.5 25 50 75 100 125 150 175 TC, Case Temperature(°C) ID, Maximum Drain Current(A) VGS=10V, RθJC=2.8°C/W Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS(th), Normalized Threshold Voltage ID=250μA ID=1mA

CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 6/9 MTN2N65CJ3 CYStek Product Specification Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Case 500 1000 1500 2000 2500 3000 3500 0.000 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Power (W) TJ(MAX)=150°C TC=25°C RθJC=2.8°C/W Forward Transfer Admittance vs Drain Current 0.01 0.1 0.001 0.01 0.1 1 ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Ta=25°C Pulsed VDS=15V Transient Thermal Response Curves 0.001 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.8°C/W

CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 7/9 MTN2N65CJ3 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 8/9 MTN2N65CJ3 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C082J3 Issued Date : 2016.02.24 Revised Date : 2016.02.25 Page No. : 9/9 MTN2N65CJ3 CYStek Product Specification TO-252 Dimension Marking: Style: Pin 1.Gate 2.Drain 3.Source 4.Drain 3-Lead TO-252 Plastic Surface Mount Package CYStek Package Code: J3 Device Name Date Code CYS 2N65C □□□□ 1 2 3 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead : Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.