P2532-01 HAMAMATSU | Alldatasheet

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Technical content

Features

/K6C Room temperature operation Makes PbS cells useful in a wide range of applications including radiation thermometers and flame monitors /K6C High sensitivity /K6C Large active area /K6C Low price /K6C Lower temperature detection limit: 100 ˚C /K6C Thermoelectrically cooled types Cooling a PbS cell increases sensitivity and improves S/N, so cooled types are widely used in precision photometry such as in analytical instruments.

Applications

/K6C Radiation thermometers /K6C Flame monitors /K6C Water content analyzers /K6C Food ingredient analysis /K6C Spectrophotometers INFRARED DETECTOR PbS photoconductive detector Infrared detectors utilizing photoconductive effects Accessories (Optional) /K6C Heatsink for one-stage TE-cooled type A3179 /K6C Heatsink for two-stage TE-cooled type A3179-01 /K6C Temperature controller for TE-cooled type C1103-04 /K6C Preamplifier for PbS/PbSe photoconductive detector C3757-02 /K6C Power supply for amplifier C3871 /K6C Infrared detector module with preamp Cooled type P4638 I Specification / Absolute maximum ratings Absolute maximum ratings Active area Thermistor resistance Thermistor power dissipation TE-cooler current dissipation Supply voltage Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material *1 Package Cooling (mm) (kΩ ) (mW) (A) (V) (°C) (°C) P2532-01 ➀ /S One-stage TE-cooled 1.5 P2682-01 ➁ /S TO-8 Two-stage TE-cooled 4 × 5 9 0.2 1.0 100 -30 to +50 -55 to +50 I Electrical and optical characteristics (Typ. unless otherwise noted) Measurement condition Element temperature Peak sensitivity wavelength λp Cut-off wavelength λc Photo sensitivity *2 S λ=λp Vs=15 V (500, 600, 1) (λp, 600, 1) Rise time tr 0 to 63 % Dark resistance RdType No. (°C) (µm) (µm) Min. (V/W) Typ. (V/W) Min. (cm·Hz 1/2 /W) Typ. (cm·Hz 1/2 /W) (cm·Hz 1/2 /W) Max. (µs) (MΩ ) P2532-01 -10 2.4 3.1 3 × 10 4 8 × 104 5 × 108 1 × 109 1 × 1011 0.5 to 10 P2682-01 -20 2.5 3.2 6 × 10 4 1.6 × 105 8 × 108 2 × 109 2 × 1011 600 0.8 to 10 *1: Window material S: sapphire glass *2: Chopping frequency: 600 Hz, load resistance: nearly equal to detector element dark resistance

PbS photoconductive detector P2532-01, P2682-01 ELEMENT TEMPERATURE (˚C) RELATIVE SENSITIVITY (Typ.) 101 102 -20 103 - 1 00 1 02 03 04 05 06 0 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 µW/cm2 CHOPPING FREQUENCY: 600 Hz SUPPLY VOLTAGE: 15 V RELATIVE OUTPUT INCIDENT ENERGY (W/cm 2) (Typ. Ta=25 ˚C, FULLY ILLUMINATED) 10-3 10-2 10-1 100 101 102 10-9 10-8 10-7 10-6 10-5 10-4 DEPENDENT ON NEP ELEMENT TEMPERATURE (˚C) RELATIVE VALUE (Typ.) 101 102 103 -10 0 10 20 30 40 50 60-20 RISE TIME DARK RESISTANCE CHOPPING FREQUENCY (Hz) RELATIVE S/N (Typ. Ta=25 ˚C) 101 102 103 101 102 103 LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 µW/cm2 SUPPLY VOLTAGE: 15 V tr: 200 µs S/N S N SUPPLY VOLTAGE (V) SIGNAL (µV) NOISE (µV) 10 20 30 40 50 60 (Typ. Ta=25 ˚C) 200 400 600 800 NOISE SIGNAL LIGHT SOURCE: BLACK BODY 500 K INCIDENT ENERGY: 4.8 µW/cm2 CHOPPING FREQUENCY: 600 Hz FREQUENCY BANDWIDTH: 60 Hz I Spectral response KIRDB0279EA I S/N vs. supply voltage I S/N vs. chopping frequency I Photo sensitivity temperature characteristic I Dark resistance, rise time temperature characteristicsI Photo sensitivity linearity KIRDB0046EA KIRDB0048EBKIRDB0047EB KIRDB0049EB KIRDB0050EA Increasing the chopping frequency re- duces the 1/f noise and results in an S/N improvement. The S/N can also be im- proved by narrowing the noise bandwidth using a lock-in amplifier. By making the incident light spot smaller than the active area, the upper limit of the linearity becomes lower. If voltage of higher than 60 V is applied, the noise increases exponentially, de- grading the S/N. The device should be operated at 60 V or less. Cooling the device enhances its sensi- tivity, but the sensitivity also depends on the load resistance in the circuit. WAVELENGTH (µm) (Typ.) 14 23 5 100 RELATIVE VALUE (%) -20 ˚C -10 ˚C 25 ˚C

PbS photoconductive detector P2532-01, P2682-01 I Connection example (P2682-01) C3757-02 C1103-04 P2682-01 A3179-01 AMP TEMPERATURE CONTROLLERDETECTOR AND HEATSINK C3871 POWER SUPPLY FOR PREAMP C4696 CHOPPER CABLE (SUPPLIED WITH C1103-04)BNC CONNECTOR CABLE (SOLD SEPARATELY) Connect C1103-04 and C3871 ground terminals together. SIGNAL PROCESSING CIRCUIT LOCK-IN AMP or SPECTRUM ANALYZER 2-CONDUCTOR SHIELDED CABLE CABLE (SUPPLIED WITH C3757-02) CURRENT (A) ELEMENT TEMPERATURE (˚C) (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) -60 -20 -40 ONE-STAGE TE-COOLED TWO-STAGE TE-COOLED VOLTAGE (V) CURRENT (A) (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 1.6 0.6 1.4 0.2 1.0 0.4 1.2 0.8 ONE-STAGE TE-COOLED TWO-STAGE TE-COOLED KIRDB0116EA ELEMENT TEMPERATURE (˚C) RESISTANCE ( Ω ) (Typ.) 103 106 104 105 -40 -30 0 -20 20 10-10 30 I Cooling characteristics of TE-cooler I Current vs. voltage characteristics of TE-cooler I Thermistor temperature characteristic KIRDB0171EA KIRDB0115EB KIRDC0003EA

PbS photoconductive detector P2532-01, P2682-01 HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2003 Hamamatsu Photonics K.K. Cat. No. KIRD1019E06 Sep. 2003 DN KIRDA0116EA IIIII Dimensional outlines (unit: mm) DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR WINDOW 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 4.5 ± 0.2 6.4 ± 0.212 MIN. 0.45 LEAD PHOTOSENSITIVE SURFACE 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 ➀ P2532-01 KIRDA0117EA DETECTOR DETECTOR TE-COOLER (-) TE-COOLER (+) THERMISTOR WINDOW 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 6.9 ± 0.2 10 ± 0.212 MIN. 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 PHOTOSENSITIVE SURFACE 0.45 LEAD ➁ P2682-01