HGTP12N60C3 HARRIS | Alldatasheet

Document overview

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Technical content

Features

  • 24A, 600V at TC = 25oC
  • 600V Switching SOA Capability J = 150oC
  • Short Circuit Rating
  • Low Conduction Loss Formerly Developmental Type TA49123.

Description

The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power sup- plies and drivers for solenoids, relays and contactors. Terminal Diagram N-CHANNEL ENHANCEMENT MODE

Ordering Information

HGTP12N60C3 TO-220AB P12N60C3 HGT1S12N60C3 TO-262AA S12N60C3 HGT1S12N60C3S TO-263AB S12N60C3 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A. C E G Packaging JEDEC TO-220AB JEDEC TO-262AA JEDEC TO-263AB HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 GATE COLLECTOR EMITTER COLLECTOR (FLANGE) A EMITTER COLLECTOR GATECOLLECTOR (FLANGE) A A M COLLECTOR (FLANGE) GATE EMITTER January 1997 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 4040.3

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S UNITS Collector Current Continuous NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 25Ω. Electrical SpecificationsTC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage BV CES IC = 250µA, VGE = 0V 600 - - V Emitter-Collector Breakdown Voltage BV ECS IC = 10mA, VGE = 0V 24 30 - V Collector-Emitter Leakage Current I CES VCE = BVCES TC = 25oC - - 250 µA VCE = BVCES TC = 150oC - - 1.0 mA Collector-Emitter Saturation Voltage V CE(SAT) IC = IC110 , VGE = 15V TC = 25oC - 1.65 2.0 V TC = 150oC - 1.85 2.2 V Gate-Emitter Threshold Voltage V GE(TH) IC = 250µA, VCE = VGE TC = 25oC 3.0 5.0 6.0 V Gate-Emitter Leakage Current I GES VGE =±20V - - ±100 nA Switching SOA SSOA T J = 150oC R G = 25Ω VGE = 15V L = 100µH VCE(PK) = 480V 80 - - A VCE(PK) = 600V 24 - - A Gate-Emitter Plateau Voltage V GEP IC = IC110 , VCE = 0.5 BVCES - 7.6 - V On-State Gate Charge Q G(ON) IC = IC110 , VCE = 0.5 BVCES VGE = 15V - 48 55 nC VGE = 20V - 62 71 nC Current Turn-On Delay Time t D(ON)I TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, R G = 25Ω, L = 100µH -1 4-n s Current Rise Time t RI -1 6-n s Current Turn-Off Delay Time t D(OFF)I - 270 400 ns Current Fall Time t FI - 210 275 ns Turn-On Energy E ON - 380 - µJ Turn-Off Energy (Note 3) E OFF - 900 - µJ Thermal Resistance R θJC - - 1.2 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S