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InAsSb photovoltaic detector P11120-201 High-speed response and high sensitivity in the 5 μm spectral band Thermoelectrically cooled infrared detector with no liquid nitrogen required www.hamamatsu.com 1 Structure Absolute maximum ratings Parameter Specifi cation Unit Window material Sapphire - Package TO-8 - Cooling Two-stage TE-cooled - Photosensitive area ϕ1.0 mm Parameter Symbol Value Unit Thermistor power dissipation - 0.2 mW Reverse voltage VR 0.1 V Operating temperature Topr -40 to +60 °C Storage temperature Tstg -55 to +60 °C Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. The P11120-201 is an infrared detector that provides high sensitivity in the 5 μm spectral band due to our unique crystal growth technology. The InAsSb photovoltaic detector has a PN junction that ensures high-speed response and high reliability. Typical applications include gas analysis such as CO 2, SOx, CO and NOx. Unlike the P11120-901 metal dewar type detector, the P11120-201 is easy to use as it uses a compact package (TO-8) not requiring liquid nitrogen. High-speed response High sensitivity High reliability Compact, thermoelectrically cooled TO-8 package Environment-friendly due to use of InAsSb Suitable for detecting infrared rays emitted from QCL Gas analysis Heatsink for two-stage TE-cooled type A3179-01 Radiation thermometers Temperature controller C1103-04 Thermal imaging Infrared detector module with preamp C4159-07 Remote sensing FTIR Spectrophotometry Features Applications Options (sold separately)

InAsSb photovoltaic detector P11120-201 Spectral response (D*) KIRDB0452EA Electrical and optical characteristics (Td=-30 °C) Parameter Symbol Condition Min. Typ. Max. Unit Peak sensitivity wavelength λp4 .0 4 .9 - μm Cutoff wavelength λc 5.6 5.9 - μm Photo sensitivity S λ=λp 0.8 1.6 - A/W Shunt resistance Rsh VR=10 mV 10 13 - Ω Detectivity D * (λp, 600, 1) 3.5 × 109 5.0 × 109 - cm·Hz1/2/W Noise equivalent power NEP λ=λp - 1.8 × 10-11 2.5 × 10-11 W/Hz1/2 Rise time tr VR=0 V, RL=50 Ω 0 to 63% - 0.4 - μs 1 423 5 6 108 1010 109 1011 Wavelength (μm) D* (cm · Hz1/2/W) C-H type CO2, SOX CO NOX (Typ. Td=-30 °C) Spectral response Wavelength (μm) Photo sensitivity (A/W) 3 21 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 456 (Typ. Td=-30 °C) KIRDB0453EA

InAsSb photovoltaic detector P11120-201 Linearity Incident light level (mW) Optical output power (μA) 0.01 10000 1000 100 1.0 1000.1 10 (Typ. λ=1.55 μm) KIRDB0456EA Dark current vs. reverse voltage KIRDB0454EA Reverse voltage (V) Dark current 0.01 100 μA 1 A 100 mA 10 mA 1 mA 0.1 (Typ.) Td=25 °C Td=-10 °C Td=-30 °C Shunt resistance vs. element temperature KIRDB0455EA Element temperature (°C) Shunt resistance (Ω) 1000 100 40200-20-40-60-80 (Typ.)

InAsSb photovoltaic detector P11120-201 Current vs. voltage of TE-cooled type Cooling characteristics of TE-cooled type KIRDB0459EA Voltage (V) Current (A) (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 1.2 1.0 0.2 0.8 0.4 0.6 0 0.2 0.4 0.6 1.0 Current (A) Element temperature (°C) -40 -50 -20 -30 -10 30 (Typ. Ta=25 °C, Thermal resistance of heatsink=3 °C/W) 0.8 KIRDB0464EA Thermistor temperature characteristic KIRDB0116EA Element temperature (°C) Resistance (Ω) 103 (Typ.) 104 105 106 -40 -20 0 20 Specifi cations of two-stage TE-cooler (Ta=25 °C) Parameter Symbol Min. Typ. Max. Unit Allowable current Ic - - 1.0 A Allowable voltage Vc - - 0.95 V Thermistor resistance Rth 8.1 9.0 9.9 kΩ Thermistor power dissipation Pth - - 0.2 mW

InAsSb photovoltaic detector P11120-201 Dimensional outline (unit: mm) KIRDA0212EA Detector (anode) Detector (cathode) TE-cooler (-) TE-cooler (+) Thermistor Window ϕ10 ± 0.2 ϕ14 ± 0.2 ϕ15.3 ± 0.2 6.9 ± 0.2 10 ± 0.212 min. 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 Photosensitive surface ϕ0.45 Lead Measurement circuit example KIRDC0094EA Chopper 600 Hz Black body 800 K Detector Band-pass filter r.m.s. meter fo=600 Hz Δf=60 Hz Incident energy 245 μW/cm

InAsSb photovoltaic detector P11120-201 Cat. No. KIRD1113E04 May 2015 DN www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 8152-375-0, Fax: (49) 8152-265-8 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 35 16440 Kista, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 20020 Arese (Milano), Italy, Telephone: (39) 02-93581733, Fax: (39) 02-93581741 China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing 100020, China, Telephone: (86) 10-6586-6006, Fax: (86) 10-6586-2866 Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. Information described in this material is current as of May, 2015. Related information ∙ Dislaimer ∙ Metal, ceramic, plastic products Technical information ∙ Infrared detectors Precautions www.hamamatsu.com/sp/ssd/doc_en.html