P10090 HAMAMATSU | Alldatasheet
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Technical content
Features
/K6C Low noise /K6C High reliability /K6C High detectivity (D*) /K6C Available in multi-element arrays (custom product)
Applications
/K6C Gas analysis /K6C Laser detection /K6C Infrared spectrophotometry /K6C Radiation thermometer Accessories (Optional) /K6C Heatsink for one-stage TE-cooled type A3179 /K6C Heatsink for two-stage TE-cooled type A3179-01 /K6C Temperature controller C1103-04 /K6C Infrared detector module with preamp P4631-01 /K6C Amplifiers for InAs photovoltaic detector (custom-made product) I Specifications/Absolute maximum ratings Absolute maximum ratings Active area Thermistor power dissipation Reverse voltage VR Operating temperature Topr Storage temperature Tstg Type No. Dimensional outline/ Window material * Package Cooling (mm) (mW) (V) (°C) (°C) P10090-01 ➀ /S TO-5 Non-cooled - P10090-11 One-stage TE-cooled P10090-21 ➁ /S TO-8 Two-stage TE-cooled φ1 0.2 0.5 -40 to +60 -40 to +80 * Window material S: sapphire glass I Electrical and optical characteristics (Typ. unless otherwise noted) Measurement condition Element temperature T Peak sensitivity wavelength λp Cut-off wavelength λc Photo sensitivity S λ=λp Shunt resistance Rsh (λp, 600, 1) NEP λ=λp Rise time tr VR=0 V RL=50 Ω 0 to 63 % Type No. (°C) (µm) (µm) (A/W) Min. (Ω ) Typ. (Ω ) Min. (cm· Hz 1/2 /W) Typ. (cm· Hz 1/2 /W) (W/Hz1/2)( µ s )
InAs photovoltaic detector P10090 series WAVELENGTH (µm) (Typ.) 108 107 1010 1011 1.0 109 4.54.0 D * (cm · Hz1/2/W) P10090-11 (T= -10 ˚C) P10090-01 (T=25 ˚C) KIRDB0356EB I Spectral response (D*) WAVELENGTH (µm) PHOTO SENSITIVITY (A/W) 2.01.51.0 0.2 0.4 1.4 1.2 1.0 0.8 0.6 2.5 3.0 3.5 4.0 (Typ.) T= -10 ˚C T= -30 ˚C T=25 ˚C KIRDB0381EA I Spectral response REVERSE VOLTAGE (V) DARK CURRENT 0.01 1 µA 1 mA 100 µA 10 µA 0.1 1 (Typ.) T=25 ˚C T= -10 ˚C T= -30 ˚C KIRDB0382EA I Dark current vs. reverse voltage ELEMENT TEMPERATURE ( ˚C) SHUNT RESISTANCE -100 1 Ω 100 kΩ 10 kΩ 1 kΩ 100 Ω 10 Ω 6040200-20-40-60-80 (Typ.) KIRDB0383EA I Shunt resistance vs. element temperature INCIDENT LIGHT LEVEL (µW) OPTICAL OUTPUT POWER (µA) 1000 100 100 1000010 1000 (Typ. Ta=25 ˚C, λ=1.3 µm) KIRDB0384EA I Linearity POSITION ON ACTIVE AREA (µm) RELATIVE SENSITIVITY (%) -200-400-600 110 100 0 200 400 600 (Typ. λ=1.55 µm) T= -10 ˚C T=25 ˚C T=10 ˚C KIRDB0385EA I Sensitivity uniformity
InAs photovoltaic detector P10090 series CHOPPER 600 Hz BLACK BODY DETECTOR BAND-PASS FILTER r.m.s. METER fo=600 Hz ∆f=60 Hz INCIDENT ENERGY: 245 µW/cm 2 I Measurement circuit KIRDC0075EA 0 0.4 0.8 1.2 1.6 TE-COOLED CURRENT (A) ELEMENT TEMPERATURE ( ˚C) -40 -50 -20 -30 -10 30 (Typ. Ta=25 ˚C, thermal resistance of heat-sink=3 ˚C/W) ONE-STAGE TE-COOLED TYPE TWO-STAGE TE-COOLED TYPE I Current vs. voltage of TE-cooled type KIRDB0115EB KIRDB0181EA VOLTAGE (V) CURRENT (A) (Typ. Ta=25 ˚C, Thermal resistance of heatsink=3 ˚C/W) 1.6 0.6 1.4 0.2 1.0 0.4 1.2 0.8 ONE-STAGE TE-COOLED TWO-STAGE TE-COOLED I Thermistor temperature characteristic KIRDB0116EA ELEMENT TEMPERATURE ( ˚C) RESISTANCE ( Ω ) 103 (Typ.) 104 105 106 -40 -20 0 20 I Cooling characteristics of TE-cooled type
InAs photovoltaic detector P10090 series HAMAMATSU PHOTONICS K.K., Solid State Division 1126-1 Ichino-cho, Higashi-ku, Hamamatsu City, 435-8558 Japan, Telephone: (81) 53-434-3311, Fax: (81) 53-434-5184, www.hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658 France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777 North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01 Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741 Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2007 Hamamatsu Photonics K.K. Cat. No. KIRD1099E03 Mar. 2007 DN 0.45 LEAD 1.0 MAX. 9.1 ± 0.3 WINDOW 5.5 ± 0.1 2.3 ± 0.2 4.3 ± 0.218 MIN. 0.4 MAX. 8.1 ± 0.1 5.1 ± 0.2 PHOTOSENSITIVE SURFACE CASE IIIII Dimensional outlines (unit: mm) DETECTOR (ANODE) DETECTOR (CATHODE) TE-COOLER (-) TE-COOLER (+) THERMISTOR WINDOW 10 ± 0.2 14 ± 0.2 15.3 ± 0.2 a 10 ± 0.212 MIN. 10.2 ± 0.2 5.1 ± 0.2 5.1 ± 0.2 P10090-11 PHOTOSENSITIVE SURFACE 0.45 LEAD P10090-21 ➀ P10090-01 ➁ P10090-11/-21 KIRDA0119EA KIRDA0191EA