NC005PG DOINGTER | Alldatasheet
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www.doingter.cn — 1 — NC005PG Description： his P -Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-30V,ID=-105A,RDS(ON)<5.5mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ -105 A Continuous Drain Current-TC=70℃ -84 EAS Single Pulse Avalanche Energy 135 mJ PD Power Dissipation2 96 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 1.3 ℃/W T A ll data sheet.com
www.doingter.cn — 2 — NC005PG Package Marking and Ordering Information： Part NO. Marking Package NC005PG C005P Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-30V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -1 -1.5 -2.5 V RDS(ON) Drain-Source On Resistance3 VGS=-10V,ID=-20A --- 4.4 5.5 mΩ VGS=4.5V,ID=15A --- 6 8 Dynamic Characteristics4 Ciss Input Capacitance VDS=-15V, VGS=0V, f=1MHz --- 1968 --- pF Coss Output Capacitance --- 723 --- Crss Reverse Transfer Capacitance --- 160 --- Switching Characteristics4 td(on) Turn-On Delay Time VDD=-15V,ID=-3A,RG=6Ω VGS=-10V --- 12 --- ns tr Rise Time --- 16.4 --- ns td(off) Turn-Off Delay Time --- 90 --- ns tf Fall Time --- 65 --- ns Qg Total Gate Charge VGS=-10V, VDS=-15, ID=-30A --- 183 --- nC Qgs Gate-Source Charge --- 14.6 --- nC Qgd Gate-Drain “Miller” Charge --- 36 --- nC Drain-Source Diode Characteristics Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=-30A --- -0.84 -1.2 V DFN5*6-8 A ll data sheet.com
www.doingter.cn — 3 — NC005PG Notes: Typical Characteristics： (TC=25℃ unless otherwise noted) ① P ulse width limited by maximum allowable junction temperature ② Limited by TJmax, starting TJ = 25°C, L = 0.3mH,RG = 25Ω, IAS = 30A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. -VDS, Drain -Source Voltage (V) Fig1. Typical Output Characteristics Tj - Junction Temperature (°C) Fig2. Normalized Threshold Voltage Vs. Temperature -VGS ,Gate -Source Voltage (V) Fig3. Typical Transfer Characteristics -ID ,Drain Current (A) Fig4. On-Resistance vs. Drain Current and Gate -ID, Drain-Source Current (A) Rdson, On -Resistance (mΩ)) -ID, Drain-Source Current (A) -VGS(TH), Gate -Source Voltage (V) A ll data sheet.com
www.doingter.cn — 4 — NC005PG -VSD, Source-Drain Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage -V DS, Drain -Source Voltage (V) Fig6. Maximum Safe Operating Area -ISD, Reverse Drain Current (A) -ID - Drain Current (A) -V DS, Drain-Source Voltage (V) Fig7. Typical Capacitance Vs. Drain-Source Voltage Qg, Total Gate Charge (nC) Fig8. Typical Gate Charge Vs. Gate-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance -VGS, Gate-Source Voltage (V) C, Capacitance (pF)ZqJC Normalized Transient Thermal Resistance A ll data sheet.com
www.doingter.cn — 5 — NC005PG Figure 11 Normalized Maximum Transient Thermal Impedance A ll data sheet.com