NC003TG DOINGTER | Alldatasheet
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www.doingter.cn — 1 — NC003TG Description： This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=110A,RDS(ON)<2.9mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-TC=25℃ 110 A Continuous Drain Current-TC=25℃ 70 IDM Pulsed Drain Current 160 IAS 26 A EAS Single Pulse Avalanche Energy 83.5 mJ PD Power Dissipation 56 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 2.2 ℃/W Av al anche Current A ll data sheet.com
www.doingter.cn — 2 — NC003TG RƟJA Thermal Resistance Junction to mbient 55 ℃/W Package Marking and Ordering Information： Part NO. Marking Package NC003TG C003T DFN5*6-8 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 30 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=30V --- --- 1 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 --- 2 V RDS(ON) Drain-Source On Resistance VGS=10V,ID=20A --- 2.3 2.9 mΩ VGS=4.5V,ID=20A --- 3.3 4.2 Dynamic Characteristics Ciss Input Capacitance VDS=15V, VGS=0V, f=1MHz --- 2225 pF Coss Output Capacitance --- 986 Crss Reverse Transfer Capacitance --- 100 Switching Characteristics td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=3 Ω，ID=20A --- 15 ns tr Rise Time --- 5 ns td(off) Turn-Off Delay Time --- 35 ns tf Fall Time --- 9 ns Qg Total Gate Charge VGS=4.5V, VDS=15V, ID=20A --- 6 nC Qgs Gate-Source Charge --- 5.5 nC Qgd Gate-Drain “Miller” Charge --- 29.5 nC Drain-Source Diode Characteristics --- --- --- --- --- --- --- --- --- --- A ll data sheet.com
www.doingter.cn — 3 — NC003TG Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage3 VGS=0V,IS=20A --- 0.8 --- V trr Continuous Source Current --- 24 --- ns qrr Pulsed Source Current --- 30 --- nC Typical Characteristics： (TC=25℃ unless otherwise noted) ISD = 20A dlSD/dt = 100 A/μs A ll data sheet.com
www.doingter.cn — —4 A ll data sheet.com