NB003PG DOINGTER | Alldatasheet
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Technical content
www.doingter.cn — 1 — NB003PG Description： his P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-20V,ID=-70A,RDS(ON)<3mΩ@VGS=-4.5V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±10 V ID Continuous Drain Current-TC=25℃ -70 A Continuous Drain Current-TC=100℃ -49.5 IDM Pulsed Drain Current1 -280 PD Power Dissipation 130 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case2 0.96 ℃/W A ll data sheet.com
www.doingter.cn — 2 — NB003PG Package Marking and Ordering Information： Part NO. Marking Package NB003PG B003P DFN5*6-8 Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=-250μA -20 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=-20V --- --- -1 μA IGSS Gate-Source Leakage Current VGS=±10 V, VDS=0A --- --- ±100 nA On Characteristics3 VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=-250μA -0.4 -0.6 -1 V RDS(ON) Drain-Source On Resistance VGS=-4.5V,ID=-20A --- 2.3 3 mΩ VGS=-2.5 V,ID=-20A --- 2.8 4 VGS=-1.8 V,ID=-20A --- 3.8 8 GFS Forward Transconductance VDS=-510V, ID=-20A 100 --- --- S Dynamic Characteristics4 Ciss Input Capacitance VDS=-10 V, VGS=0V, f=1MHz --- 4950 --- pF Coss Output Capacitance --- 380 --- Crss Reverse Transfer Capacitance --- 290 --- Switching Characteristics4 td(on) Turn-On Delay Time --- 20 --- ns tr Rise Time --- 50 --- ns td(off) Turn-Off Delay Time --- 100 --- ns tf Fall Time --- 40 --- ns Qg Total Gate Charge --- 100 --- nC Qgs Gate-Source Charge --- 21 --- nC Qgd Gate-Drain “Miller” Charge --- 32 --- nC Drain-Source Diode Characteristics VDD= -10V, RGEN=3Ω VGS= -4.5V,RL=0. VDS= -10V,ID= -20A, VGS= -4.5V A ll data sheet.com
www.doingter.cn — 5 — NB003PG Square W ave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance r(t),Normalized Ef fective Transient Thermal Imped ance A ll data sheet.com