MA070E12EVAL INFINEON | Alldatasheet
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Application Note AN 2012-08 V1.0 December 2012 AN2012-08 Evaluation Adapter Board for 62mm Half Bridge IGBT Modules
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012 Edition 2011-06-01 Published by Infineon Technologies AG
59568 Warstein, Germany
© Infineon Technologies AG 2011. All Rights Reserved. Attention please! THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE IMPLEMEN - TATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE REGARDED AS ANY DESCRIPTION OR WARRANTY OF A C ERTAIN FUNCTIONALITY, CONDITION OR QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND L IABILITIES OF ANY KIND (INCLUDING WITHOUT LIMITATION WARRANTIES OF NON -INFRINGEMENT OF INTELLECTUAL PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN IN THIS APPLICATION NOTE. Information For further information on tec hnology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For in formation on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life -support devices or systems with the express written approval of Infineon Technologies, if a failure of su ch components can reasonably be expected to cause the failure of that life -support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to su pport and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. AN 2012-08 Revision History: date (2012-12-12), V1.0 Previous Version: none Subjects: none Author: Alain Siani We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [WAR-IGBT-Application@infineon.com]
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012 The board described is an evaluation board dedicated for laboratory environment only. It operates at high voltages. This board mus t be operated by qualified and skilled personnel familiar with all applicable safety standards.
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012
1 Introduction
The MA070E12/17_EVAL module adapter board, shown in Figure 1, offer s reliable connection between driver and 62mm IGBT modules. Handling of the 62mm modules are described in [7 ] and [8] . The MA070E12/17_EVAL board is designed to work with all 62mm half bridge IGBT module types respectively in 1200V and 1700V classes. The MA070E12/17_EVAL adapter board is appropriate to be used in combination with the flexible driver Kit 2ED300E17-SFO evaluation adapter board and 2ED300C17 -S / -ST EiceDRIVER™, both in single as well as in parallel configuration. The flexible driver kit allows for a paralleling of up to three IGBT modules . Each IGBT module within the paral lel configuration needs one MA070E12/17_EVAL board as depicted in Figure 1. The board is available from Infineon in small quantities. The properties of this board are described in the design feature chapter of this document, whereas the remaining paragraphs provide information to enable the customer s to copy, modify and qualify the design for production, according to their own specific requirements. Environmental conditions were considered in the design of the MA070E12/17_EVAL. Components qualified for a lead-free reflow soldering process were selected. T he design was tested as described in this document but not qualified regarding manufacturing and operation within the whole operating temperature range or lifetime. The boards provided by Infineon are subject to functional testing only. Due to their purpose, evaluation boards are not subject to the same procedures regarding Returned Material Analysis (RMA), Process Change Notification (PCN) and Product Discontinuatio n (PD) as regular products. See Legal Disclaimer and Warnings for further restrictions on Infineon’s warranty and liability. Figure 1: 62mm IGBT module FF300R17KE3 equipped with MA070E12/17_EVAL Evaluation Adapter board
1.1 Part Number explanation
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012
2 Design features
Electrical features of the evaluation board a s well as mechanical dimensions including necessary interface connections are presented in the following sections.
2.1 Main features
The MA070E12/17 module adapter board offers: Dual channel IGBT driver in combination with 2ED300E17-SFO [5] and 2ED300C17 -S / -ST EiceDRIVER™ Electrically and mechanically suitable for 62mm IGBT module family Different gate resistor values for turning-on and -off are possible IGBTs are secured against temporary collector - emitter overvoltages during turn-off by Active Clamping Desaturation output signals for short circuit monitoring All components, except connectors, are surface mount ed devices with lead -free 260°C soldering profile The PCB is de signed to fulfil the requirements of IEC61800 -5-1, pollution degree 2, overvoltage category III Useful features i n case the MA070E12/17_EVAL is not used with 2ED300E17 -SFO adapter board and 2ED300C17-S /-ST EiceDRIVER™: Can be used with max. ±20V isolated power supply . Due to IGBT short circuit performance a value of max. +16V is suggested. Asymmetric power supply is also allowed, e.g. +16 V and -8 V Input PWM positive and negative voltage pulse level should be selected according to the actual power supply voltage level. Maximum +16 V and minimum -8 V at +16 V / -8 V power supply or maximum +15 V and minimum -15 V at +15 V / -15 V power supply.
2.2 Key Data
General key data and characteristic valu es are given in Table 1. These are typical values, measured at an ambient temperature of Tamb = 25 °C. Table 1: Electrical Parameters Parameter Description Value Unit UDC max. DC voltage supply ±20 V IG maximum output continuous current ±8 A PDC/DC max DC/DC output power per channel1 4 W Top operating temperature 2 -40…+85 °C Tsto storage temperature -40…+85 °C 1 Only if MA070E12/17_EVAL is used in combination with 2ED300E17-SFO adapter board and 2ED300C17-S EiceDRIVER™ 2 Max. tolerable ambient temperature strictly depends on MA070E12/17_EVAL load conditions.
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012
2.3 Mechanical dimensions
The dimensions of the MA070E12/17 evaluation board are given in Figure 2. Figure 2: Mechanical dimension of MA070E12/17_EVAL
2.4 Pin assignment
After the mo dule adapter has been mounted to the 62mm module, all external electrical signals listed in Table 2 should be applied to connector X1 and X2 as shown in Figure 3. If the MA070E12/17_EVAL is used in combination with the 2ED300E17-SFO, the necessary connections to the module adapter board are also depicted in Figure 3. In this case , the Sense-Signal of the 2ED300S17 -S driver is used instead of the Out - Signal, making the internal booster of the 2ED300C17 redundant. The control signals required for module driving should be connected to the input interface of the 2ED300E17-SFO as described in AN2007-05. Figure 3: Connection between 2ED300E17-SFO and MA070E12/17
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012 Table 2: Pin assignment of the connectors X1 and X2 MA070E12/17_EVAL Pin Label Function X2.5 VA+ Insulated DC/DC positive voltage supply high side X2.4 COM A Auxiliary emitter X2.3 VA- Insulated DC/DC negative voltage supply X2.2 VGE A Gate-emitter signal source X2.1 VCESATA Desaturation voltage monitoring output X1.5 VB+ Insulated DC/DC positive voltage supply low side X1.4 COM B Auxiliary emitter X1.3 VB- Insulated DC/DC negative voltage supply X1.2 VGE B Gate-emitter signal source X1.1 VCESATB Desaturation voltage monitoring output
3 Functionality on board
The MA070E12/17_EVAL basically support s already existing IGBT driver s in half -bridge configuration and provides additional functions separately for high- and low-side IGBT: Gate signal amplifier / emitter follower - booster VCE monitoring for short circuit detection Active voltage clamping Figure 4 depicts the MA070E12/17_EVAL with functional blocks and shows their physical location. Figure 4: Functional blocks of the MA070E12/17_EVAL
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012
3.1 Gate resistors
The MA070E12/17_EVAL are assembled and delivered as shown on Figure 4, but without gate resistors. Proper gate resistors should be soldered by the customer according to the chosen module. The datasheet value of the gate resistor according to the selected module may be used as a starting point, but lower values are permissible as long as the datasheet value of dIC/dt is not exceeded and the module is able to switch without oscillations. The switching losses will also vary w ith application parameters. For more information on these topics please refer to [1] and [2]. To avoid degradation of the gate resistors, repetitive pulse power rated resistors should be selected . Further hints about the selection of pulse resistors are available on the web site of the manufacturers. If it is intended to use different values for Rgon and Rgoff assembly of the diodes D_T1, D_T2, D_B1, D_B2 is mandatory. In Figure 5, the locations of these diodes are shown. Rgon and Rgoff are the equivalent turn-on and turn-off resistors for the paralleling of R_GT3 and R_GT4 respectively R_GT1 and R_GT2 as can be seen in Figure 11. Figure 5: The MA070E12/17_EVAL location of optional diodes Dead time has to be adjusted according to the chosen module, driver supply voltages and gate resistors. For details refer to [3].
3.2 Gate signal amplifier
During the turn-on and turn-off of the IGBT, a high peak of gate current must be delivered from the driver. Usually there is no technical problem when one module is driven. If one IGBT driver is used for modules connected in parallel , the signal amplifier must deliver the cumulated gate current. This setup suffers from multiple drawbacks as desc ribed in [4] and [5]. To overcome the limitations of the single driver approach in paralleling, each IGBT module should be equipped with one adapter board. The use of MA070E12/17_EVAL boards offers a dedicated solution to fulfill the high peak current dema nd of each paralleled IGBT module. In this approach all modules are con trolled by one PWM input signal , but driven by a proper adequate power source, also eliminating circulation current among paralleled modules.
3.3 VCE monitoring for short circuit detection
When the IGBT conducts a current several times higher than the nominal current, the IGBT desaturates and the collector-emitter voltage increases. This behaviour can be practically used for short circuit detection and protection of the IGBT. The short circuit duration time for Infineon 1200V and 1700V IGBT modules must not exceed 10µs. During this time the short circuit should be detected and the IGBT switch ed off without exceeding VCES. If the MA070E12/17_EVAL board is used in combination with 2ED300E17-SFO, the soft shut down resistors RSSD must be chosen correctly in order to ensure proper short circuit protection. Chapter 3.5 of AN2007 -05 describes the procedure in detail.
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012
3.4 Active voltage clamping – boosted version
Active clamping is a technique which keeps transient overvoltages below the crit ical limits when the IGBT turns off. The standard approach f or active clamping is to use a chain of avalanche diodes connected between the auxiliary collector and the gate of an IGBT module. When the collector-emitter voltage exceeds the diodes breakdown voltage, the diodes current sums up with the current from the driver output. Due to the now increased gate -emitter voltage the transistor is held in an active mode and the turning -off process is interrupted. The dI C/dt slows down which results in a limited voltage overshoot. Avalanche diodes conduct high peak currents during the time period in which the clamping is actively limiting the overvoltage. Overvoltage protection of the MA070E12/17_EVAL is based on act ive c lamping as described above. The clamping diodes are connected directly to the IGBT ’s gate as well as to the input of the amplifier located on the MA070E12/17_EVAL. Therefore, the major amount of current for recharging the gate is derived from the gate driver’s power supply instead of via the clamping diodes. This technique offers the advantage to use TVS diodes with lower pulse power. The two versions of the evaluation adapter boards for 1200V and 1700V are sharing the same layout. The difference between bo th is the choice of the TVS diodes for each voltage class. Active clamping is intended as a means of overvoltage protection in case of an over-current and short-circuit turn-off. If active clamping operates repetitively, e.g. because of extraordinary high DC-link stray inductance or excessive DC-link voltage, a significant increase in switching losses might damage the module.
3.5 Maximum switching frequency
The switching frequency of the adapter board is limited either by the maximum output power of the driver power supply or by the maxim um temperature of the PCB due to the power losses in the external gate resistors. These power losses in the gate resistors depend on the IGBT gate charge, gate voltage magnitude and on the switching frequency of the IGBT. Due t o the power losses in the external gate resistors, heat will be generated, which leads to an increase of the PCB temperature in the neighborhood of the se resistors. This temperature must not be higher than the m aximum working temperature of the PCB, i.e. 1 05°C for a standard FR4 material. The calculation of the power losses in the gate resistors can be done by utilizing equation (1): GsoutINTEXTdis QfVRPRPP )()( (1) where: Pdis = dissipated power P(REXT) = dissipated power of the external gate resistors P(RINT) = dissipated power of the IGBT module internal gate resistor ΔVout = voltage magnitude at the driver output fs = switching frequency QG = IGBT gate charge for the given gate voltage range The ratio of the losses dissipated internally P(R INT) and externally P(REXT) corresponds directly to the ratio of the mentioned RINT and REXT resistors. Due to the PCB temperature criteria , the power dissipated in the external gate resistors P(REXT) has to be considered for the thermal design.
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012 Figure 6 illustrates the PCB board temperature around t he gate resistors depending on the switching frequency and defined conditions: Tamb = 60°C, VGE = -15V/+15V. Used at a switching frequency of 20kHz , the board temperature remains clearly below the critical limit of 105°C for a standard FR4 PCB material. Figure 6: board temperature around the gate resistors of MA070E12/17_EVAL board in conjunction with FF300R17KE4 IGBT module
4 Paralleling
In contrast to the operation of one single IGBT, the switching of paralleled IGBT modules on t he same operation point is not trivial . This can be explained by the fact that the IGBTs have a certain variation in their characteristics. A direct consequence of this is a slight current imbalance between the IGBTs. The biggest challenge is to minimize the deviation of the leg current to achieve highly efficient systems and an improved reliability. Two main factors have a dominant role in the current maldistribution: - the difference between the impedance of each leg of the paralleled setup - the difference in the output voltages of the individual leg of the paralleled setup
4.1 Static current imbalance
The static current imbalance can be caused by the variation of - the collector-emitter voltage of each leg of the paralleled setup - the resistance of the main current path
4.2 Dynamic current imbalance
The dynamic current imbalance can be caused by the variation of - the transmission characteristics caused by the different VGEth of each IGBT - the impedance of the main current path - the stray inductance of the internal and external commutation path of the IGBT module - the IGBT driver output resistance in the paralleled legs - the transfer characteristic IC = f(VGE)
4.3 Paralleling with MA070E12/17_EVAL
Figure 7. It must be noticed that soft shut down resistors RSSD in every case should be select ed according to modules in parallel, driven by 2ED300E17-SFO_Eval and 2ED300C17-S /-ST EiceDRIVER™. The turn-on and turn-off were measured with a gate resistance Rgon = Rgoff = 1R5 and at Tamb = 25°C.
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012
5 Schematics and Layouts
To meet individual customer requirements and make the evaluation adapter board for the 62mm IGBT module a basis for development or modification, all necessary technical data like schematic, layout and components are included in this chapter.
5.1 Schematics
Figure 9 depicts the driver circuit of the high side IGBT. Figure 9: MA070E12/17_EVAL booster high side Figure 10 illustrates the driver circuit of the low side IGBT. Figure 10: MA070E12/17_EVAL booster low side
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012
5.2 Layouts
Figures 13, 14 and 15 give an overview about the layout of the MA070E12/17_EVAL board. Figure 13: MA070E12/17_EVAL – assembly drawing Figure 14: MA070E12/17_EVAL – Top layer Figure 15: MA070E12/17_EVAL – Bottom layer
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012
6 Bill of Material
The bill of material includes a part list as well as assembly notes. The tolerances for resistors should be less or equal to ±1 %, for capacitors of the type C0G less or eq ual to ±5 % and for capacitors of the type X7R less or equal to ±10 %. The basic circuit and layout for MA070E12 and MA070E17 are all the same. The only difference is the type of transil diodes used for active clamping as can be seen in the bill of materia ls. Gate resistors should be assembled according to the hints given in Table 3. Table 3: Assembly Active clamping diodes on the MA070E12/17_EVAL board Board Names Assembled diodes Types of assembled diodes MA070E12_EVAL D1.1C, D1.2C, D1.3C, D1.4C D2.1C, D2.2C, D2.3C, D2.4C SMJC188A MA070E17_EVAL D1.1C, D1.2C, D1.3C bypassed by 0R resistors or wire) 1.5SMC440A Table 4: Bill of Material for MA070E12_EVAL adapter board Type Value / Type Package QTY Name Part Recommanded Manufacturer Assembly Resistor 12R R0805 4 R_B1, R_B2, R_T1, R_T2, no special yes Resistor 1k R0805 2 R_DB, RD_T no special yes Resistor 4R7 M1206 6 R_B+, R_B-, R_T+,R_T-, R_B_GND, R_T_GND no special yes Resistor 12R R0603 4 R_BC1, R_BC2, R_TC1, R_TC2 no special yes Resistor 10k R0805 2 R_T, R_B no special yes Semiconductor BAT165 SOD323 2 D1, D2 Infineon yes Semiconductor STPS1L40 SMB 2 D1, D2 STM yes Semiconductor ES1D DO214AC 8 D_B1, D_B2, D_BB, D_BB1, D_T1, D_T2, D_BT, D_BT1 Vishay yes D2.1C, D2.2C, D2.3C, D2.4C Vishay yes Semiconductor STTH112U SOD6 4 D_DB, D_DB1, D_DT, D_DT1 STM yes Resistor 1R R1206 2 R_BB, R_BT no special yes R esistor* variable R2010 8 R_GB1, R_GB2, R_GB3, R_GB4, R_GT1, R_GT2, R_GT3, R_GT4 special pulse resistor No Connector ST2.8 AMP 0-0735187-2
2 CB, CT TE-connectivity yes
Semiconductor ZXTN2010Z SOT89 4 T_PT1, T_PT2, T_PB1, T_PB2, Zetex yes
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012 Type Value / Type Package QTY Name Part Recommanded Manufacturer Assembly Semiconductor ZXTP2012Z SOT89 4 T_NT1, T_NT2, T_NB1, T_NB2 Zetex yes Connector 6410-5A 6410-5A 2 X1, X2 Molex yes Capacitor 4µ7 C1206 16 C_B1, C_B2, C_B3, C_B4, C_B5, C_B6, C_B7, C_B8, C_T1, C_T2, C_T3, C_T4, C_T5, C_T6, C_T7, C_T8, Murata yes Resistor 12R R0805 4 R_B1, R_B2, R_T1, R_T2 no special yes Resistor 1k R0805 2 R_DB, RD_T no special yes *Pulse power rated types Table 5: Bill of Material for MA070E17_EVAL adapter board Type Value / Type Package QTY Name Part Recommanded Manufacturer Assembly resistor 12R R0805 4 R_B1, R_B2, R_T1, R_T2, no special yes Resistor 1k R0805 2 R_DB, RD_T no special yes Resistor 4R7 M1206 6 R_B+, R_B-, R_T+,R_T-, R_B_GND, R_T_GND no special yes Resistor 12R R0603 4 R_BC1, R_BC2, R_TC1, R_TC2 no special yes Resistor 10k R0805 2 R_T, R_B no special yes Semiconductor BAT165 SOD323 2 D1, D2 Infineon yes Semiconductor STPS1L40 SMB 2 D1, D2 STM yes Semiconductor ES1D DO214AC 8 D_B1, D_B2, D_BB, D_BB1, D_T1, D_T2, D_BT, D_BT1 Vishay yes Semiconductor 1.5SMC440 A SMC 6 D1.1C, D1.2C, D1.3C, D2.1C, D2.2C, D2.3C Vishay yes Semiconductor 1.5SMC188 A SMC 2 D1.4C, D2.4C Vishay bypassed by 0R resistor (i.e. Semiconductor STTH112U SOD6 4 D_DB, D_DB1, D_DT, D_DT1 STM yes Resistor 1R R1206 2 R_BB, R_BT no special yes Resistor* variable R2010 8 R_GB1, R_GB2, R_GB3, R_GB4, R_GT1, R_GT2, R_GT3, R_GT4 special pulse resistor No Connector ST2.8 AMP 0-0735187-2 Semiconductor ZXTN2010Z SOT89 4 T_PT1, T_PT2, T_PB1, T_PB2, Zetex yes Semiconductor ZXTP2012Z SOT89 4 T_NT1, T_NT2, T_NB1, T_NB2 Zetex yes
Evaluation Adapter Board for 62mm half bridge IGBT Modules Application Note AN 2012-08 V1.0 December 2012 Type Value / Type Package QTY Name Part Recommanded Manufacturer Assembly Connector 6410-5A 6410-5A 2 X1, X2 Molex yes Capacitor 4µ7 C1206 16 C_B1, C_B2, C_B3, C_B4, C_B5, C_B6, C_B7, C_B8, C_T1, C_T2, C_T3, C_T4, C_T5, C_T6, C_T7, C_T8, Murata yes Resistor 12R R0805 4 R_B1, R_B2, R_T1, R_T2 no special yes Resistor 1k R0805 2 R_DB, RD_T no special yes *Pulse power rated types
7 How to order the Evaluation Adapter Board
Every evaluation board has its own IFX order number and can be ordered via your Infineon sales partner. Information can also be found at the Infineon Web Page: www.infineon.com CAD-data for the board described here are available on request. The use of this data is subjected to the disclaimer given in this AN. Please contact: WAR-IGBT-Application@infineon.com IFX order number for MA070E12_EVAL: SP001071992 IFX order number for MA070E17_EVAL: SP001071998 IFX order number for 2ED300E17-SFO: SP000355559 IFX order number for 2ED300C17-S: SP000359184 IFX order number for 2ED300C17-ST: SP000359188
8 Literature
[1] Infineon Technologies AG: AN2008 -02, 2ED100E12-F2 - 6ED100E12-F2 - Evaluation Driver Board for EconoDUAL™3 and EconoPACK+™ modules, V1.2, August 2009 [2] Bäßler, M.; Ciliox A.; Kanschat P.: On the loss – softness trade -off: Are different chip versions needed for softness improvement? PCIM Europe 2009, Nuremberg, May 2009 [3] Infineon Technologies AG: AN2007 -04, How to calculate and to minimize the dead time requirement for IGBTs properly, V1.0, May 2007 [4] Luniewski, P.; Jansen U.; Hornkamp M.: Dynamic voltage rise control –the most efficient way to control turn-off switching behaviour of IGBT transistors, Pelincec 2005, Warsaw, October 2005 [5] Luniewski, P.; Jansen. U.: Benefits of system oriented IGBT m odule design for high power inverters, EPE 2007, Aalborg, September 2007 [6] Infineon Technologies AG: AN200 7-05, Evaluation Board for 2ED300C17 -S/-ST IGBT driver , V1.1, Februar 2008 [7] Infineon Technologies AG: AN2012 -05, 62mm Modules Application and Ass embly Notes , V1.1, September 2012 [8] Infineon Technologies AG: AN2012 -05, 62mm Module Anwendungs - und Montage Hinweise, V1.1, September 2012 [9] Infineon Technologies AG: AN2011 -05, Industrial IGBT Modules Explanation of Technical Information, V1.0 January 2012