N1D1R1NG

N1D1R1NG DOINGTER | Alldatasheet

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www.doingter.cn — 1 — N1D1R1NG Description： This N-Channel MOSFET uses advanced technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=40V,ID= A,RDS(ON)<1.1mΩ@VGS= 10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol Parameter Ratings Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage6 ±20 V ID Drain Current-TC=25℃ 270 A Drain Current-TC=25℃ 100 IDM Pulsed Drain Current1 350 EAS Single Pulse Avalanche Energy5 256 mJ PD Power Dissipation 138.8 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics： Symbol Parameter Max Units RƟJC Thermal Resistance,Junction to Case 0.9 ℃/W RƟJA * Thermal Resistance Junction to mbient3 25 ℃/W Bottom View Top View S S S G DD D D PDFN 5x6 (Silicon Limited) 270 A ll data sheet.com

f=1.0MHz Forward Transconductance www.doingter.cn — 2 — N1D1R1NG Package Marking and Ordering Information： Part NO. Marking Package D1R1N PDFN5*6-8- Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VGS=0V,ID=250μA 40 --- --- V IDSS Zero Gate Voltage Drain Current VGS=0V, VDS=32V --- --- 25 μA IGSS Gate-Source Leakage Current VGS=±20V, VDS=0A --- --- ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VGS=VDS, ID=250μA 1 2.2 V RDS(ON) Drain-Source On Resistance2 VGS=10V,ID=20A --- 1.1 mΩ VGS=4.5V,ID=20A --- 1.85 GFS VDS=5V,ID=20A 120 S Dynamic Characteristics Ciss Input Capacitance VDS=20V, VGS=0V, f=1MHz --- 11600 18560 pF Coss Output Capacitance --- 1330 Crss Reverse Transfer Capacitance --- 40 Rg 3 6 Ω Switching Characteristics td(on) Turn-On Delay Time VDS=20V, VGS=10V, ID=30A，RG=1.6Ω --- 15 ns tr Rise Time --- 64 ns td(off) Turn-Off Delay Time --- 140 ns tf Fall Time --- 22 ns Qg Total Gate Charge VGS=10V, VDS=20V, ID=20A --- 172 275 nC Qgs Gate-Source Charge --- 30 nC Qgd Gate-Drain “Miller” Charge --- 17 nC Drain-Source Diode Characteristics N1D1R1NG --- 0.7 1.4 A ll data sheet.com

dI/dt=100A/µs I www.doingter.cn — 3 — N1D1R1NG Symbol Parameter Conditions Min Typ Max Units VSD Source-Drain Diode Forward Voltage2 VGS=0V,IS=20A --- 1.3 V trr Continuous Source Current --- 54 ns qrr Pulsed Source Current --- 80 nC Notes: S=20A, VGS=0V 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec; 60oC/W at steady state. 4.Package limitation current is 100A . 5.Starting Tj=25oC , VDD=30V , L=0.5mH , RG=25Ω 6.The negative VGS rating of N-ch device is for low duty cycle pulse event only. T ypical Characteristics： (TC=25℃ unless otherwise noted) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 160 240 320 0.4 0.8 1.2 1.6 2 V DS , Drain-to-Source Voltage (V) ID , Dr ain Current (A) 10V 8.0V 7.0V 6.0V 5.0V V G = 4.0V T C =25 o C 120 160 001 122 V DS , Drain-to-Source Voltage (V) ID , Dr ain Current (A) T C = 150 o C 10V 8.0V 7.0V 6.0V 5.0V V G = 4.0V 1.2 1.4 1.6 1.8 68 1 0 V GS , Gate-to-Source Voltage (V) RDS(ON) (m I D =2 T C =25 o C 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) N ormalized RDS(ON) I D =20A V G =10V A ll data sheet.com

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Reverse Diode Junction Temperature 0.0 0.4 0.8 1.2 1.6 2.0 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) N ormalized VGS(t 0.1 100 V SD , Source-to-Drain Voltage (V) IS(A T j =25 o CT j =150 o C I D =250uA Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 80 120 160 200 240 Q G , Total Gate Charge (nC) VGS , Gate to Source Voltage (V) I D =2 V DS =20V 4000 8000 12000 16000 112 13 14 15 1 V DS , Drain-to-Source Voltage (V) C ( pF) f=1.0MHz C iss C oss C rss 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t , Pulse Width (s) N ormalized Thermal Response (Rth jc) PDM Duty factor = t/T Peak Tj = PDM x Rthjc + Tc t T 0.02 0.01 0.05 0.1 0.2 Duty factor=0.5 Single Pulse 0.01 0.1 100 1000 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) ID (A T C =25 o C Single Pulse 10us 100us 1ms 10ms DC Operation in this area limited by RDS(ON) www .doingter.cn — —4 A ll data sheet.com

www.doingter.cn — 5 — N1D1R1NG Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics Temperature 160 240 320 50 75 100 125 150 T C , Case Temperature ( o C ) ID , Dr ain Current (A) Limited by package 120 160 200 012345 V GS , Gate-to-Source Voltage (V) ID , Dr ain Current (A) T j =150 o C T j =25 o C V DS =5V T j = -55 o C DSS v.s. Junction Fig 14. Total Power Dissipation Temperature Resistance 120 160 50 100 150 T C , Case Temperature( o C) PD, Power Dissipation(W) 0.4 0.8 1.2 1.6 -100 -50 0 50 100 150 T j , Junction Temperature ( o C) N ormalized BVDSS I D =1mA 20 40 60 80 100 120 I D , Drain Current (A) RDS(ON) (m T j =25 o C 4.5V V GS =10V Fig 13. Normalized BV A ll data sheet.com