MTP8107X8 CYSTEKEC | Alldatasheet

Document overview

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  • PDF pages: 9

Technical content

Features

  • Low on-resistance
  • Simple drive requirement
  • Advanced trench process technology
  • High density cell design for ultra low on resistance
  • Pb-free lead plating and halogen-free package Equivalent Circuit Outline

Ordering Information

MTP8107X8-0-T1-G DFNWB3×2-8L-D (Pb-free lead plating and halogen-free package) 3000 pcs / Tape & Reel MTP8107X8 DFNWB3×2-8L-D G：Gate S：Source D：Drain BVDSS -30V -6.6A ID@VGS=-10V , TA=25°C ID@VGS=-10V , TA=70°C -5.3A VGS=-10V , ID=-3A 19.5mΩ RDSON(TYP) VGS=-4.5V , ID=-3A 30mΩ Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Pin #1 Pin #1 Product name

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 2/9 MTP8107X8 CYStek Product Specification Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Unit Drain-Source V oltage VDS -30 Gate-Source V oltage VGS +20/-25 V Continuous Drain Current @TA=25°C, VGS=-10V -6.6 Continuous Drain Current @TA=70°C, VGS=-10V ID -5.3 Pulsed Drain Current (Note 1&2) IDM -30 A Maximum Power Dissipation @TA=25°C (Note 3) 2.5 Maximum Power Dissipation @TA=70°C (Note 3) PD 1.6 W Operating Junction and Storage Temperature Tj, Tstg -55~+150 °C Thermal Performance Parameter Symbol Limit Unit Thermal Resistance, Junction-to-Ambient (Note 3) RɵJA 50 Thermal Resistance, Junction-to-Case RɵJC 20 °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤300μs, duty cycle≤2% 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 - - ID=-10mA, VGS=0V BVDSX -21 - - ID=-10mA, VGS=10V VGS(th) -1 - -2.5 V VDS=VGS, ID=-250µA IGSS - - ±100 nA VGS=±20V , VDS=0V - - -10 VDS=-30V , VGS=0V IDSS - - -100 µA VDS=-30V , VGS=0V , Tj=55°C - 19.5 28 VGS=-10V , ID=-3A *RDS(ON) - 30 38 mΩ VGS=-4.5V , ID=-3A GFS - 7 - S VDS=-5V , ID=-3A Dynamic Ciss - 1109 - Coss - 158 - Crss - 112 - pF VDS=-10V , VGS=0V , f=1MHz *td(ON) - 7 - *tr - 19.8 - *td(OFF) - 60.2 - *tf - 18.8 - ns VDS=-15V , ID=-3A, VGS=-10V , RG=4.7Ω

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 3/9 MTP8107X8 CYStek Product Specification *Qg - 21 - *Qgs - 3.2 - *Qgd - 4.2 - nC VDS=-24V , ID=-6A, VGS=-10V Rg - 15 - Ω f=1MHz Source-Drain Diode *ISD - - -6.6 *ISM - - -30 A *VSD - -0.84 -1.2 V VGS=0V , IS=-6A *trr - 9.2 - ns *Qrr - 3.2 - nC IF=-6A, VGS=0V , dIF/dt=100A/µs *Pulse Test : Pulse Width ≤300µs, Duty Cycle≤2% Recommended Soldering Footprint unit : mm

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 4/9 MTP8107X8 CYStek Product Specification Typical Characteristics Typical Output Characteristics 012345 DS, Drain-Source Voltage(V) -ID, Drain Current(A) -VGS=10V, 9V, 8V, 7V, 6V, 5V -VGS=2V -VGS=2.5V -VGS=3V -VGS=3.5V Brekdown Voltage vs Ambient Temperature 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -BVDSS, Normalized Drain-Source Breakdown Voltage ID=-250μA, VGS=0V Static Drain-Source On-State resistance vs Drain Current 100 0.1 1 10 100 -ID, Drain Current(A) RDS(ON), Static Drain-Source On-State Resistance(mΩ) VGS=-3V VGS=-10V VGS=-4.5V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1.2 02468 1 DR, Reverse Drain Current(A) -VSD, Source-Drain Voltage(V) Tj=25°C Tj=150°C Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 200 300 400 500 600 700 800 900 1000 02468 1 0 Drain-Source On-State Resistance vs Junction Tempearture 0.4 0.8 1.2 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) RDS(ON), Normalized Static Drain- Source On-State Resistance -VGS, Gate-Source Voltage(V) RDS(ON), Static Drain-Source On- State Resistance(mΩ) VGS=-10V, ID=-3A ID=-3A RDS(ON)@ Tj=25°C : 19.5mΩ typ.

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 5/9 MTP8107X8 CYStek Product Specification Typical Characteristics(Cont.) Capacitance vs Drain-to-Source Voltage 100 1000 10000 0.1 1 10 100 -VDS, Drain-Source Voltage(V) Capacitance---(pF) Coss Ciss Crss Threshold Voltage vs Junction Tempearture 0.2 0.4 0.6 0.8 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -VGS(th), Normalized Threshold VoltageID=-250μA ID=- 1mA Forward Transfer Admittance vs Drain Current 0.01 0.1 100 0.001 0.01 0.1 1 10 100 -ID, Drain Current(A) GFS, Forward Transfer Admittance(S) Pulsed Ta=25°C VDS=-5V Gate Charge Characteristics 0 4 8 1 21 62 02 4 Total Gate Charge---Qg(nC) -VGS, Gate-Source Voltage(V) ID=-6A VDS=-24V VDS=-12V VDS=-6V Maximum Safe Operating Area 0.01 0.1 100 0.1 1 10 100 -VDS, Drain-Source Voltage(V) -ID, Drain Current(A) DC 10ms 100m 1ms RDS( ON) Limit TA=25°C, Tj(max)=150°C, VGS=-10V, RθJA=50°C/W Single Pulse 100μs Maximum Drain Current vs Junction Temperature 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) -ID, Maximum Drain Current(A) TA=25°C, VGS=-10V, RθJA=50°C/W

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 6/9 MTP8107X8 CYStek Product Specification Typical Characteristics(Cont.) Typical Transfer Characteristics 012345 GS, Gate-Source Voltage(V) -ID, Drain Current (A) -VDS=10V Single Pulse Maximum Power Dissipation 100 150 200 250 300 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Peak Transient Power (W) TJ(MAX)=150°C TA=25°C θJA=50°C/W Transient Thermal Response Curves 0.01 0.1 t1, Square Wave Pulse Duration(s) r(t), Normalized Effective Transient Thermal Resistance Single Pulse 0.01 0.02 0.05 0.1 0.2 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50 °C/W

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 7/9 MTP8107X8 CYStek Product Specification Reel Dimension Carrier Tape Dimension

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 8/9 MTP8107X8 CYStek Product Specification Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Pb-free Assembly Average ramp-up rate (Tsmax to Tp) 3°C/second max. 3°C/second max. Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds Time maintained above: −Temperature (TL) − Time (tL) 183°C 60-150 seconds 217°C 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C 260 +0/-5 °C Time within 5°C of actual peak temperature(tp) 10-30 seconds 20-40 seconds Ramp down rate 6°C/second max. 6°C/second max. Time 25 °C to peak temperature 6 minutes max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface.

CYStech Electronics Corp. Spec. No. : C386X8 Issued Date : 2015.04.14 Revised Date : Page No. : 9/9 MTP8107X8 CYStek Product Specification DFNWB3×2-8L-D Dimension Marking: Device 8107 □□□□ Name Date Code Style: Pin 1.Drain 2.Drain 3.Drain 4.Gate 5.Source 6.Drain 7.Drain 8.Drain 8-Lead DFNWB3×2-8L-D Plastic Surface Mounted Package CYStek Package Code: X8 D1 1.600 1.800 0.063 0.071 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material:

  • Lead: Pure tin plated.
  • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice:
  • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
  • CYStek reserves the right to make changes to its products without notice.
  • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
  • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.