IRL220 ARTSCHIP | Alldatasheet

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7A,150-200V www.artschip.com 1

Description

These device are n-channel , enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature z Rugged z Low Drive Requirements z Ease of Paralleling TO-204AA IRF220 IRF221 IRF222 IRF223 TO-220AB IRF620 IRF622 IRF623 MTP7N18 MTP7N20 Product Summary Part Number V DSS R DSS(on) I D at Tc=25¥ ID at Tc=100¥ Case Style IRF220 200V 0.8 Ω 5.0A 3.0A IRF221 150V 0.8 Ω 5.0A 3.0A IRF222 200V 1.2 Ω 4.0A 2.5A IRF223 150V 1.2 Ω 4.0A 2.5A TP-204AA IRF620 200V 0.8 Ω 5.0A 3.0A IRF621 150V 0.8 Ω 5.0A 3.0A IRF622 200V 1.2 Ω 4.0A 2.5A IRF623 150V 1.2 Ω 4.0A 2.5A MTP7N18 180V 0.7 Ω 7.0A 4.5A MTP7N20 200V 0.7 Ω 7.0A 4.5A TO-220AB Notes For information concerning connection diagram and package outline, refer to Setion 7.

7A,150-200V www.artschip.com 2 Maximum Ratings Symbol Characteristic Rating IRF220/222 IRF620/622 MTP7N20 Rating MTP7N18 Rating IRF222/223 IRF622/623 Unit VDSS Drain to Source Voltage 1 200 180 150 V VDGR Drain to Gate Voltage 1 RGS=20k Ω 200 180 150 V VGS Gate to Source Voltage ±20 ±20 ±20 V TJ,Tstg Operating Junction and Storage Temperature -55 to +150 -55 to +150 -55 to +150 ¥ TL Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5S 275 275 275 ¥ Maximum Thermal characteristics IRF220-223/irf620-623 MTP7N/20 R ӨJC Thermal Resistance Junction to Case 3.12 1.67 ¥/W R ӨJA Thermal Resistance Junction to Ambient 30/80 80 ¥/W PD Total Power Dissipation at TC=25¥ 40 75 W IDM Pulsed Drain Current 2 20 20 A Electrical Characteristics (TC=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions Off Characteristics 200 180 V(BR)DSS Drain Source Breakdown Voltage1 IRF220/222/620/622/ MTP7N20 MTP7N18 IRF221/223/621/623 150 V V GS=0V, ID=250µA 250 µA V DS=Rated VDSS, VGS=0V IDSS Zero Gate Voltage Drain Current 1000 µA V DS=0.8xRated VDSS, VGS=0V, Tc=125¥ IGSS Gate-Body Leakage Current IRF220-223 IRF620-623/MTP7N18/20 ±100 ±500 nA V GS=±20V, VDS=0V

7A,150-200V www.artschip.com 3 Electrical Characteristics (Cont.) (TC=25¥ unless otherwise noted) Symbol Characteristic Min Max Unit Test Conditions On Characteristics 2.0 4.0 VGS(th) Gate Threshold Voltage IRF220-223/IRF620-623 MTP7N18/20 2.0 4.5 V I D=250µA, VDS=VGS ID=1mA, VDS=VGS 0.8 1.2 RDS(on) Static Drain-Source On-Resistance2 IRF220/221/620/621 IRF222/223/622/623 MPT7N18/7N20 0.7 Ω V GS=10V, ID=2.5A I D=3.5A 2.45 5.9 V V VGS=10V; ID=3.5A VGS=10V; ID=7.0A VDS(on) Drain-Source On-Voltage 2 MTP7N18/7N20 5.0 V V GS=10V, ID=3.5A TC=100¥ gfs Forward Transconductance 1.3 S( ) V DS=10V, ID=2.5A Dynamic Characteristics Ciss Input Capacitance 600 pF Coss Output Capacitance 300 pF Crss Reverse Transfer Capacitance 80 pF VDS=25V, VGS=0V f=1.0MHz Switching Characteristics (TC=25¥, Figure 1,2)3 td(on) Turn-on Delay Time 40 ns tr Rise Time 60 ns td(off) Turn-Off Delay Time 100 ns tf Fall Time 60 ns VDD=100V, ID=2.5A VGS=10V, RGEN=50 Ω RGS=50 Ω Qg Total Gate Charge 15 nC V GS=10V, ID=6.0A VDD=45V Symbol Characteristic Typ Max Unit Test Conditions Source-Drain Diode Characteristics 1.8 V Is=5.0A; V GS=0V VSD Diode Forward Voltage 1.4 V I S=4.0A; VGS=0V trf Reverse Recovery Time 350 ns I S=5.0A; dIS/dt=25A/µS Notes 2. Pulse width limited by TJ 3. Switching time measurements performed on LEM TR-58 test equipment.