STH75N06 ARTSCHIP | Alldatasheet
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N-Channel 60-V (D-S) 175 ¥ MOSFET www.artschip.com 1 PRODUCT SUMMARY V(BR)DSS (V) r DS(on) (Ω) I D(A) 0.0075@ VGS=10V 60 0.0085@VGS=4.5V 75a Top View STH75N06-07L DRAIN connected to TAB STH75N06-07L N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (Tc=25¥ UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage V GS ±20 V Tc=25¥ 75 a Continuous Drain Current (TJ=175¥) Tc=125¥ ID Pulsed Drain Current I DM 240 Avalanche Current I AR 60 A Repetitive Avalanche Energy b L=0.1mH E AR 280 mJ Tc=25¥ (TO-220AB and TO-263) 250 c Power Dissipation TA=25¥ (TO-263)d PD 3.7 W Operating Junction and Storage Temperature Range TJ,Tstg -55 to 175 ¥ THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit PCB Mount (TO-263)d 40 Junction-to-Ambient Free Air (TO-220AB) RthJA 62.5 Junction-to-Case R thJC 0.6 ¥/W Notes a. Package limited. b. Duty cycle ≤1%. c. See SOA curve for voltage derating. d. When mounted on 1” square PCB (FR-4 material).
N-Channel 60-V (D-S) 175 ¥ MOSFET www.artschip.com 2 SPECIFICATIONS (TJ=25¥ UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS=0V, ID=250µA 60 Gate Threshold Voltage V GS(th) V DS=VGS, ID=250µA 1.0 3.0 V Gate-Body Leakage I GSS V DS=0V, VGS=±20V ±100 nA VDS=60V, VGS=0V 1 VDS=60V. VGS=0V, TJ=125¥ 50 Zero Gate Voltage Drain Current I DSS VDS=60V, VGS=0V, TJ=175¥ 250 µA On-State Drain Current a I D(on) V DS=5V, VGS=10V 120 A VGS=10V, ID=30A 0.0061 0.0075 VGS=4.5V, ID=20A 0.0071 0.0085 VGS=10V, ID=30A, TJ=125¥ 0.012 Drain-Source On-State Resistancea r DS(on) VGS=10V, ID=30A, TJ=175¥ 0.015 Ω Forward Transconductance a gfs VDS=15V, ID=30A 30 S Dynamic b Input Capacitance Ciss 6300 Output Capacitance Coss 920 Reverse Transfer Capacitance Crss VGS=0V, VDS=25, f=1MHz 350 pF Total Gate ChargeC Qg 75 120 Gate-Source ChargeC Qgs 18 Gate-Drain Charge C Qgd VDS=30V, VGS=10V, ID=75A nC Turn-On Delay Time C td(on) 14 40 Rise Time C tr 15 40 Turn-Off Delay Time C t d(off) 150 300 Fall Time C tf VDD=30V, RL=0.47 Ω ID ≈ 75A, VGEN=10V, RG=2.5 Ω 50 100 ns Source-Drain Diode Ratings and Characteristics (TC=25¥)b Continuous Current I S 75 Pulsed Current I SM 240 A Forward Voltage V SD I F=75A, VGS=0V 1.0 1.3 V Reverse Recovery Time trr 67 120 ns Peak Reverse Recovery Current I RM(REC) 6 8 A Reverse Recovery Charge Qrr IF=75A, di/dt = 100A/µs 0.2 0.48 µC Notes a. Pulse test: pulse width ≤ 300 µsec, duty cycle ≤2%. b. Guaranteed by design, not su bject to production testing. c. Independent of oper ating temperature.
N-Channel 60-V (D-S) 175 ¥ MOSFET www.artschip.com 3 TYPICAL CHARACTERISTICS (25¥ UNLESS NOTED)
N-Channel 60-V (D-S) 175 ¥ MOSFET www.artschip.com 4 TYPICAL CHARACTERISTICS (25¥ UNLESS NOTED) THERMAL RATINGS
N-Channel 60-V (D-S) 175 ¥ MOSFET www.artschip.com 5